MSFC25 Thyristor/Diode Modules VRRM / VDRM IFAV / ITAV 800 to 1600V 25Amp Applications y y y y Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features y y y y y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate UL E243882 approved Module Type TYPE VRRM/VDRM VRSM MSFC25-08 MSFC25-12 MSFC25-16 800V 1200V 1600V 900V 1300V 1700V ◆Diode Maximum Ratings Symbol Values Units ID Output Current(D.C.) Tc=85℃ 25 A IFSM Surge forward current t=10mS Tvj =45℃ 550 A 1500 A2s 3000 V Operating Junction Temperature -40 to +125 ℃ Storage Temperature Mounting Torque To terminals(M5) -40 to +125 3±15% ℃ Nm To heatsink(M6) 5±15% Nm 100 g Values Units 2 it Visol Tvj Tstg Mt Item Circuit Fusing Consideration Isolation Breakdown Voltage(R.M.S) Ms Weight a.c.50HZ;r.m.s.;1min Module（Approximately） Thermal Characteristics Symbol Item Rth(j-c) Thermal Impedance, max. Rth(c-s) Conditions Thermal Impedance, max. Conditions Junction to Case 0.45 ℃/W Case to Heatsink 0.10 ℃/W Electrical Characteristics Symbol Item VFM Forward Voltage Drop, max. IRRM Repetitive Peak Reverse Current, max. MSFC25 – Rev 0 Oct, 2011 Conditions T=25℃ IF =75A Tvj =25℃ VRD=VRRM Tvj =125℃ VRD=VRRM Values Min. Typ. ≤0.5 ≤6 Max. 1.80 Units V mA mA www.microsemi.com 1/4 MSFC25 ◆Thyristor Maximum Ratings Symbol Item Conditions Values Units o ITAV Average On-State Current Sine 180 ;Tc=85℃ 25 A ITSM Surge On-State Current TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 550 480 A Circuit Fusing Consideration TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 1500 1150 A2s i2t Visol Tvj Isolation Breakdown Voltage(R.M.S) Operating Junction Temperature Tstg Storage Temperature Mt Mounting Torque Ms a.c.50HZ;r.m.s.;1min 3000 -40 to +125 -40 to +125 V ℃ To terminals(M5) 3±15% ℃ Nm To heatsink(M6) 5±15% Nm di/dt Critical Rate of Rise of On-State Current TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Thermal Characteristics Symbol Item Thermal Impedance, max. Rth(j-c) Rth(c-s) Thermal Impedance, max. Values Units Junction to Case Conditions 0.90 ℃/W Case to Heatsink 0.20 ℃/W Electrical Characteristics Symbol Item VTM Peak On-State Voltage, max. Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. Conditions Values Min. Typ. Max. Units 1.80 V TVJ=TVJM ,VR=VRRM ,VD= VDRM 10 mA On state threshold voltage For power-loss calculations only (TVJ =125℃) 0.9 V Value of on-state slope resistance. max TVJ =TVJM 12 mΩ VGT Gate Trigger Voltage, max. TVJ =25℃ , VD =6V 2.5 V IGT Gate Trigger Current, max. TVJ =25℃ , VD =6V 150 mA VGD IGD Non-triggering gate voltage, max. Non-triggering gate current, max. TVJ=125℃,VD =2/3VDRM TVJ =125℃, VD =2/3VDRM 0.25 5 V mA IL Latching current, max. TVJ =25℃ , RG = 33 Ω 250 400 mA IH Holding current, max. TVJ =25℃ , VD =6V 100 200 mA tgd Gate controlled delay time TVJ=25℃, IG=1A, diG/dt=1A/us 1 us tq Circuit commutated turn-off time TVJ =TVJM 80 us IRRM/IDRM VTO rT MSFC25 – Rev 0 Oct, 2011 T=25℃ IT =75A www.microsemi.com 2/4 MSFC25 Performance Curves 75 50 W A sin.180 40 DC rec.120 DC rec.60 50 30 rec.30 sin.180 rec.120 20 25 rec.60 rec.30 10 PTAV 0 ITAVM 0 ITAV 10 20 30 A 0 40 0 Tc Fig1. Power dissipation 50 100 ℃ 130 Fig2.Forward Current Derating Curve 1000 1.2 ℃/ W 50HZ A Zth(j-S) Zth(j-C) 0.8 500 0.4 0 0 0.001 t 0.01 0.1 1 10 S 100 Fig3. Transient thermal impedance 10 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 100 Typ. A 75 max. 50 25 25℃ - - -125℃ IT 0 0 VTM 0.5 1.0 1.5 2.0 V 2.5 Fig5. Forward Characteristics MSFC25 – Rev 0 Oct, 2011 www.microsemi.com 3/4 MSFC25 100 1/2·MSFC25 V 20V;20Ω 10 VGT 1 PG(tp) -40℃ Tvj 25℃ 125℃ VG VGD125℃ IGT IGD125℃ 0.1 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: F1 × Dimensions in mm MSFC25 – Rev 0 Oct, 2011 www.microsemi.com 4/4