AP75N07GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
75V
RDS(ON)
11mΩ
ID
G
▼ Halogen Free & RoHS Compliant
BVDSS
80A
S
Description
AP75N07 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP75N07GP) are available for low-profile
applications.
G
D
TO-220(P)
S
G
D
S
TO-263(S)
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V
VDS
Drain-Source Voltage
75
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V4
80
A
ID@TC=100℃
Drain Current, VGS @ 10V
70
A
320
A
300
W
2
W/℃
450
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
5
Value
Units
0.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
40
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
201501156
AP75N07GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=1mA
Min.
Typ.
Max.
Units
75
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.08
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=40A
-
-
11
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=15V, ID=40A
-
120
-
S
IDSS
Drain-Source Leakage Current
VDS=75V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=125 C) VDS=60V, VGS=0V
-
-
250
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
83
130
nC
o
Qgs
Gate-Source Charge
VDS=60V
-
10
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
51
-
nC
td(on)
Turn-on Delay Time
VDD=40V
-
15
-
ns
tr
Rise Time
ID=30A
-
73
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
340
-
ns
tf
Fall Time
VGS=10V
-
200
-
ns
Ciss
Input Capacitance
VGS=0V
-
4270
6830
pF
Coss
Output Capacitance
VDS=25V
-
690
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
320
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
Max.
Units
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
Tj=25℃, IS=40A, VGS=0V
-
-
1.5
V
trr
Reverse Recovery Time
IS=40A, VGS=0V
-
90
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
235
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
4.Package limitation current is 80A .
5.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP75N07GS/P-HF
200
280
T C = 25 o C
10V
7.0 V
5.0V
4.5V
160
200
160
120
80
10V
7.0 V
5.0V
4.5V
T C = 175 o C
ID , Drain Current (A)
ID , Drain Current (A)
240
120
V G =3.0V
80
V G =3.0V
40
40
0
0
0
3
6
12
8.0V
9
0
Fig 1. Typical Output Characteristics
6
9
15
8.0V
12
Fig 2. Typical Output Characteristics
2.4
20
I D =20A
I D =40A
V G =10V
T C =25 o C
Normalized RDS(ON)
2.0
RDS(ON) (mΩ )
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
16
1.6
1.2
12
0.8
8
0.4
2
4
6
8
10
25
Fig 3. On-Resistance v.s. Gate Voltage
12
RDS(ON) (mΩ )
15
IS(A)
13
o
75
100
125
150
175
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
o
T j =175 C
50
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
T j =25 C
10
5
V GS =4.5V
11
V GS =10V
10
0
9
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
0
20
40
60
80
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3
AP75N07GS/P-HF
f=1.0MHz
14
10000
C iss
ID=40A
10
V DS = 4 0 V
V DS = 48 V
V DS = 60 V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
1000
6
C oss
C rss
4
2
100
0
0
40
80
120
160
1
200
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
100us
ID (A)
100
1ms
10ms
10
100ms
DC
o
T C =25 C
Single Pulse
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
SINGLE PULSE
0.01
1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
o
ID , Drain Current (A)
V DS =5V
T j =25 C
T j =175 o C
VG
QG
4.5V
80
QGS
QGD
40
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP75N07GS/P-HF
MARKING INFORMATION
TO-263
75N07GS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-220
75N07GP
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5