MCH6421 Ordering number : ENA1264 SANYO Semiconductors DATA SHEET MCH6421 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 20 ±12 V V ID 5.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 22 A Allowable Power Dissipation PD When mounted on ceramic substrate (1200mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=1mA, VGS=0V Ratings min typ Unit max 20 V VDS=20V, VGS=0V 1 μA ±10 μA IGSS VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 Forward Transfer Admittance ⏐yfs⏐ RDS(on)1 VDS=10V, ID=2A 2.0 ID=2A, VGS=4.5V 29 38 mΩ Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=1A, VGS=2.5V 43 61 mΩ ID=0.5A, VGS=1.8V 69 99 mΩ Cutoff Voltage Marking : KV 1.3 3.8 V S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70908PE TI IM TC-00001490 No. A1264-1/4 MCH6421 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Ratings Conditions min typ Unit max VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 410 pF 84 pF 59 pF td(on) tr See specified Test Circuit. 7.5 ns See specified Test Circuit. 26 ns td(off) tf See specified Test Circuit. 38 ns Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. 32 ns VDS=10V, VGS=4.5V, ID=5.5A VDS=10V, VGS=4.5V, ID=5.5A 5.1 nC 0.7 nC VDS=10V, VGS=4.5V, ID=5.5A IS=5.5A, VGS=0V 1.7 Package Dimensions nC 0.8 1.2 V Switching Time Test Circuit unit : mm (typ) 7022A-009 VDD=10V 0.25 VIN 2.0 6 5 4.5V 0V 0.15 4 ID=2A RL=5Ω VIN 2.1 1.6 0 to 0.02 D VOUT PW=10μs D.C.≤1% 2 3 0.65 G 0.3 1 2 3 6 5 4 SANYO : MCPH6 VDS=10V 4.0 1.8V 3.5 3.0 2.5 2.0 1.5 1.5V 1.0 3.0 2.5 2.0 °C 25 °C Drain Current, ID -- A Drain Current, ID -- A 3.5 1.5 1.0 0.5 0.5 VGS=1.2V 0 0 0.1 0.2 0.3 MCH6421 S ID -- VGS 4.5 2.0V 8.0V 4.5V 4.0 3.5V 2.5V ID -- VDS 4.5 50Ω Ta= 75 0.07 0.85 P.G 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 --25 °C 0.25 1 0 1.0 IT13836 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Gate-to-Source Voltage, VGS -- V 1.6 1.8 IT13837 No. A1264-2/4 MCH6421 RDS(on) -- VGS 110 100 90 80 ID=0.5A 70 1.0A 60 2.0A 50 40 30 20 10 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V =1.8 VGS 70 A =1.0 V, I D 5 . 2 = VGS .0A I =2 4.5V, D = VGS 60 50 40 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT13839 IS -- VSD 7 5 VGS=0V 3 2 5 --2 °C 75 °C 25 1.0 °C 7 5 3 1.0 7 5 3 2 25° C --25 °C = Ta 5°C 2 0.5 0.6 Ta= 7 3 0.1 7 5 3 2 2 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 0.01 0.2 5 0.3 0.4 Ciss, Coss, Crss -- pF td(off) 3 tf 2 tr td(on) 10 1.0 IT13841 f=1MHz 5 7 5 0.9 7 2 100 0.8 Ciss, Coss, Crss -- VDS 1000 VDD=10V VGS=4.5V 3 0.7 Diode Forward Voltage, VSD -- V IT13840 SW Time -- ID 7 5 Switching Time, SW Time -- ns A =0.5 V, I D 80 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 5 90 IT13838 VDS=10V 0.1 0.01 7 5 Ciss 3 2 100 Coss 7 Crss 5 3 2 0.01 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 7 10 IT13842 0 3 2 Drain Current, ID -- A 3.5 3.0 2.5 2.0 1.5 10 7 5 3 2 0 3 4 Total Gate Charge, Qg -- nC 5 6 IT13853 10 12 14 16 18 20 IT13843 ASO IDP=22A PW≤10μs 10 0μ 1m s s ID=5.5A 10 DC ms 10 0m op s era tio Operation in this area is limited by RDS(on). 3 2 0.5 2 8 1.0 7 5 1.0 1 6 3 2 0.1 7 5 0 4 5 VDS=10V ID=5.5A 4.0 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg 4.5 Gate-to-Source Voltage, VGS -- V 10 ⏐yfs⏐ -- ID 7 100 0 --60 0 0 RDS(on) -- Ta 110 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT13854 No. A1264-3/4 MCH6421 PD -- Ta Allowable Power Dissipation, PD -- W 1.6 When mounted on ceramic substrate (1200mm2✕0.8mm) 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13855 Note on usage : Since the MCH6421 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No. A1264-4/4