CYSTEKEC BTC4617C3 General purpose npn epitaxial planar transistor Datasheet

Spec. No. : C204C3
Issued Date : 2004.03.02
CYStech Electronics Corp.
Revised Date :
Page No. : 1/4
General Purpose NPN Epitaxial Planar Transistor
BTC4617C3
Description
The BTC4617C3 is designed for use in driver stage of AF amplifier and low speed switching.
Symbol
Outline
BTC4617C3
SOT-523
C
B:Base
C:Collector
E:Emitter
B
E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @Ta=25℃
Derate above 25℃
Junction Temperature
Storage Temperature
BTC4617C3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
60
50
7
150
V
V
V
mA
Pd
150
mW
Tj
Tstg
150
-55~+150
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C204C3
Issued Date : 2004.03.02
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
60
50
7
120
-
180
2
100
100
0.5
560
3.5
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50µA
VCB=60V
VEB=7V
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=30MHz
VCB=12V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Marking Code and Classification of hFE
Rank
Q
R
S
hFE Range
120-270
180-390
270-560
Marking
BQ
BR
BS
BTC4617C3
CYStek Product Specification
Spec. No. : C204C3
Issued Date : 2004.03.02
CYStech Electronics Corp.
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
HFE@VCE=6V
Current Gain---HFE
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
100
100
10
0.1
1
10
100
Collector Current --- IC(mA)
1000
0.1
Saturation Voltage vs Collector Current
1
10
100
Collector Current --- IC(mA)
1000
Cutoff Frequency vs Collector Current
1
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
FT@VCE=12V
0.1
100
0.1
1
10
100
Collector Current --- IC(mA)
1000
1
10
100
Collector Current --- IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
160
140
120
100
80
60
40
20
0
0
50
100
150
200
Ambient Temperature ---Ta(℃ )
BTC4617C3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C204C3
Issued Date : 2004.03.02
Revised Date :
Page No. : 4/4
SOT-523 Dimension
Marking:
C
A
3
B_
3E_
D
1
B
_ : hFE Rank Code
2
G
F
H
I
E
3-Lead SOT-523 Plastic
Surface Mounted Package
CYStek Package Code: C3
J
K
Style: Pin 1.Base 2.Emitter 3.Collector
L
N
M
O
*: Typical
Inches
Min.
Max.
0.0079 0.0157
0.0591 0.0669
0.0118 0.0197
0.0295 0.0335
0.0118 0.0197
0.0039 0.0118
0.0039 0.0118
*0.0197
-
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
0.20
0.40
1.50
1.70
0.30
0.50
0.75
0.85
0.30
0.50
0.10
0.30
0.10
0.30
*0.50
-
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
*0.0197
0.0610 0.0650
0.0276 0.0315
0.0224 0.0248
0.0020 0.0059
0.0039 0.0118
0
0.0031
Millimeters
Min.
Max.
*0.50
1.55
1.65
0.70
0.80
0.57
0.63
0.05
0.15
0.10
0.30
0
0.08
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4617C3
CYStek Product Specification
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