Diodes ES3B 3.0a surface mount schottky barrier rectifier Datasheet

ES3A/B - ES3D/B
3.0A SURFACE MOUNT SUPER-FAST RECTIFIER
Features
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current
Capability
Surge Overload Rating to 100A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
A
Min
Max
Min
Max
A
3.30
3.94
5.59
6.22
B
4.06
4.57
6.60
7.11
C
1.96
2.21
2.75
3.18
D
0.15
0.31
0.15
0.31
D
Case: Molded Plastic
Terminals: Solder Plated Terminal - Solderable
per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMB Weight: 0.093 grams (approx.)
SMC Weight: 0.21 grams (approx.)
Mounting Position: Any
Marking: Type Number
J
G
E
H
SMC
Dim
C
Mechanical Data
SMB
B
E
5.00
5.59
7.75
8.13
G
0.10
0.20
0.10
0.20
H
0.76
1.52
0.76
1.52
2.00
2.62
2.00
2.62
J
All Dimensions in mm
AB, BB, CB, DB Suffix Designates SMB Package
A, B, C, D, Suffix Designates SMC Package
Maximum Ratings and Electrical Characteristics
@ TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
ES3A/B
ES3B/B
ES3C/B
ES3D/B
Unit
VRRM
VRWM
VR
50
100
150
200
V
VR(RMS)
35
70
105
140
V
IO
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
100
A
Forward Voltage
VFM
0.9
V
IRM
10
500
A
trr
25
ns
Average Rectified Output Current
Peak Reverse Current
at Rated DC Blocking Voltage
@ TT = 100C
@ IF = 3.0A
@ TA = 25C
@ TA = 125C
Reverse Recovery Time (Note 3)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance, Junction to Terminal (Note 1)
Operating and Storage Temperature Range
Notes:
Cj
45
pF
RJT
15
K/W
Tj, TSTG
-65 to +150
C
1. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5.
DS14003 Rev. E1-2
1 of 2
ES3A/B - ES3D/B
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
3.0
2.0
1.0
0
25
75
50
100
125
150
10
1.0
0.1
Tj = 25°C
Pulse Width: 300µs
0.01
175
0
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
120
IR, INSTANTANEOUS REVERSE CURRENT (A)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.4
Single Half-Sine-Wave
(JEDEC Method)
100
80
60
40
20
1000
Tj = 125°C
100
10
Tj = 25°C
1.0
0
1
10
0
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Surge Current Derating Curve
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
DS14003 Rev. E1-2
2 of 2
ES3A/B - ES3D/B
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