APTM50DHM35G Asymmetrical - bridge MOSFET Power Module Application VBUS Q1 • • • CR3 G1 OUT2 S1 CR2 • G4 0/VBUS S4 • • • OUT1 VBUS Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits 0/VBUS S1 S4 G4 OUT2 • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 99 74 396 ±30 39 781 51 50 3000 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50DHM35G – Rev 2 July, 2006 G1 Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Q4 OUT1 VDSS = 500V RDSon = 35mΩ typ @ Tj = 25°C ID = 99A @ Tc = 25°C APTM50DHM35G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 35 Min Test Conditions IF = 100A VR = 400V di/dt = 200A/µs www.microsemi.com Unit Max Unit µA mΩ V nA nF nC 140 21 38 93 2070 µJ 1690 3112 µJ 2026 Min 600 Tj = 25°C Tj = 125°C Tc = 60°C ns 75 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 99A, R G = 1Ω IF = 100A IF = 200A IF = 100A Typ 14 2.8 0.2 280 Max 200 1000 39 5 ±150 80 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 99A, R G = 1Ω VR=600V Typ 3 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 99A R G = 1Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM T j = 125°C VGS = 10V VBus = 250V ID = 99A Turn-off Delay Time Fall Time VGS = 0V,VDS = 400V Test Conditions VGS = 0V VDS = 25V f = 1MHz Rise Time Tf Tj = 25°C VGS = 10V, ID = 49.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Min VGS = 0V,VDS = 500V Typ Max 250 500 Tj = 125°C 100 1.6 1.9 1.4 Tj = 25°C 180 Tj = 125°C 220 Tj = 25°C 390 Tj = 125°C 1450 Unit V µA A 1.8 V ns nC 2–6 APTM50DHM35G – Rev 2 July, 2006 Symbol APTM50DHM35G Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight Typ To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Max 0.16 0.6 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM50DHM35G – Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTM50DHM35G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 0.1 0.05 0.02 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) VGS=10&15V 300 7V 200 6.5V 6V 100 5.5V 5V 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 50 TJ=125°C TJ=-55°C 2 4 6 8 DC Drain Current vs Case Temperature ID, DC Drain Current (A) 1 VGS=20V 0.95 0.9 20 TJ=25°C 100 VGS, Gate to Source Voltage (V) VGS =10V 0 150 0 25 Normalized to VGS=10V @ 49.5A 1.05 200 0 RDS(on) vs Drain Current 1.1 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 250 40 60 80 100 ID, Drain Current (A) 120 www.microsemi.com 100 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 TC, Case Temperature (°C) 150 4–6 APTM50DHM35G – Rev 2 July, 2006 ID, Drain Current (A) 8V RDS(on) Drain to Source ON Resistance Transfert Characteristics 300 400 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100 us limited by RDSon 100 1 ms 10 Single pulse TJ =150°C TC=25°C 10 ms 100 ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID=49.5A 50 www.microsemi.com 14 ID=99A TJ=25°C 12 VDS=100V VDS=250V 10 VDS=400V 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) 5–6 APTM50DHM35G – Rev 2 July, 2006 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50DHM35G APTM50DHM35G Rise and Fall times vs Current 160 70 140 td(off) V DS=333V RG=1Ω T J=125°C L=100µH 60 50 40 30 VDS=333V RG=1Ω TJ=125°C L=100µH 120 t r and tf (ns) td(on) 100 80 tr 60 40 20 20 0 10 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 40 60 80 100 120 140 160 ID, Drain Current (A) 10 VDS=333V RG=1Ω TJ=125°C L=100µH 5 4 Eon 3 Switching Energy (mJ) Switching Energy (mJ) 20 Switching Energy vs Gate Resistance Switching Energy vs Current 6 Eoff 2 1 VDS=333V ID=99A TJ=125°C L=100µH 8 6 Eoff Eon 4 Eoff 2 0 0 0 20 0 40 60 80 100 120 140 160 ID, Drain Current (A) 350 ZVS 300 250 IDR, Reverse Drain Current (A) 400 V DS=333V D=50% R G=1Ω T J=125°C T C=75°C 200 ZCS 150 Hard switching 100 50 0 10 20 30 40 50 60 70 I D, Drain Current (A) 80 5 10 15 20 25 Gate Resistance (Ohms) Operating Frequency vs Drain Current 450 Frequency (kHz) tf 90 Source to Drain Diode Forward Voltage 1000 100 T J=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50DHM35G – Rev 2 July, 2006 td(on) and t d(off) (ns) Delay Times vs Current 80