DSEP 8-06A HiPerFREDTM Epitaxial Diode IFAV = 10 A VRRM = 600 V trr = 35 ns with soft recovery VRSM VRRM V V 600 600 Type A C TO-220 AC C DSEP 8-06A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 135°C; rectangular, d = 0.5 35 10 A A Features IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 50 A EAS TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH 0.1 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A -55...+175 175 -55...+150 °C °C °C 60 W ● ● ● ● ● TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical 0.4...0.6 2 Nm g ● ● Applications ● ● ● Symbol IR ① VF ② Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 60 0.25 mA mA IF = 10 A; 1.42 2.10 V V 2.5 0.5 K/W K/W 35 ns TVJ = 150°C TVJ = 25°C RthJC RthCH trr IRM IF = 1 A; -di/dt = 50 A/ms; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 12 A; -diF/dt = 100 A/ms TVJ = 100°C ● ● ● ● ● A ● ● Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 ms, Duty Cycle < 2.0 % Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● 4.4 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 008 Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSEP 8-06A 30 1.4 T = 100°C nC VJ V = 300V 1.2 R A 25 IF TVJ=150°C TVJ=100°C TVJ= 25°C 20 15 Qr 40 TVJ= 100°C A VR = 300V 1.0 IRM IF= 20A IF= 10A IF= 5A 0.8 30 IF= 20A IF= 10A IF= 5A 20 0.6 10 0.4 5 10 0.2 0 0.0 0.5 1.0 0.0 100 2.0 V 2.5 1.5 A/ms 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 120 2.0 trr 1.5 1.0 90 I RM 80 0.5 0.9 10 0.6 5 0.3 TVJ= 100°C IF = 10A 0.0 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 0 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ µs V FR tfr 70 40 ms 1000 600 A/ 800 -diF/dt 1.2 Qr 0 400 tfr IF= 20A IF= 10A IF= 5A 100 200 Fig. 3 Peak reverse current IRM versus -diF/dt V VFR 15 110 Kf 0 20 TVJ= 100°C VR = 300V ns 0 Fig. 5 Recovery time trr versus -diF/dt 10 K/W 0.0 ms 1000 600 A/ 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.5578 0.4931 0.0052 0.0003 0.0169 0.1 0.01 0.001 0.00001 DSEP 8-06A/DSEC16-06A 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values © 2000 IXYS All rights reserved 914 Fig. 7 Transient thermal resistance junction to case 2-2