ON AMIS42665TJAA6G High-speed low power can transceiver Datasheet

AMIS-42665
High-Speed Low Power
CAN Transceiver
Description
The AMIS−42665 CAN transceiver is the interface between a
controller area network (CAN) protocol controller and the physical
bus and may be used in both 12 V and 24 V systems. The transceiver
provides differential transmit capability to the bus and differential
receive capability to the CAN controller.
Due to the wide common−mode voltage range of the receiver inputs,
the AMIS−42665 is able to reach outstanding levels of
electromagnetic susceptibility (EMS). Similarly, extremely low
electromagnetic emission (EME) is achieved by the excellent
matching of the output signals.
The AMIS−42665 is a new addition to the CAN high−speed
transceiver family and offers the following additional features:
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MARKING
DIAGRAM
8
1
1
XXXXX
A
L
Y
W
G
Features
• Wake−up (WU) Over Bus
• Voltage Source via VSPLIT Pin for Stabilizing the Recessive Bus
•
•
•
•
•
•
•
•
•
•
•
•
•
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 10
1
XXXXX
ALYW
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
TxD
1
8
STB
GND
2
7
CANH
VCC
3
6
CANL
RxD
4
5
VSPLIT
AMIS−
42665
•
•
Level (Further EMC Improvement)
Ideal Passive Behavior when Supply Voltage is Removed
Extremely Low Current Standby Mode
Compatible with the ISO 11898 Standard (ISO 11898−2, ISO
11898−5 and SAE J2284)
High Speed (up to 1 Mbps)
Ideally Suited for 12 V and 24 V Industrial and Automotive
Applications
Extremely Low Current Standby Mode with Wake−up via the Bus
Low EME Common−Mode Choke is No Longer Required
Differential Receiver with Wide Common−Mode Range ($35 V) for
High EMS
Transmit Data (TxD) Dominant Time−out Function
Thermal Protection
Bus Pins Protected against Transients in an Automotive Environment
Power Down Mode in which the Transmitter is Disabled
Bus and VSPLIT Pins Short Circuit Proof to Supply Voltage and
Ground
Logic Level Inputs Compatible with 3.3 V Devices
These are Pb−Free Devices
SOIC−8
CASE 751
8
(Top View)
PC20040829.1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
Publication Order Number:
AMIS−42665/D
AMIS−42665
Table 1. TECHNICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
Power Supply Voltage
4.75
5.25
V
VSTB
DC Voltage at Pin STB
−0.3
VCC
V
VTxD
DC Voltage at Pin TxD
−0.3
VCC
V
VRxD
DC Voltage at Pin RxD
−0.3
VCC
V
VCANH
DC Voltage at Pin CANH
0 < VCC < 5.25 V; No Time Limit
−35
+35
V
VCANL
DC Voltage at Pin CANL
0 < VCC < 5.25 V; No Time Limit
−35
+35
V
VSPLIT
DC Voltage at Pin VSPLIT
0 < VCC < 5.25 V; No Time Limit
−35
+35
V
VO(dif)(bus_dom)
Differential Bus Output Voltage in
Dominant State
42.5 W < RLT < 60 W
1.5
3
V
CM−range
Input Common−Mode Range for
Comparator
Guaranteed Differential Receiver Threshold
and Leakage Current
−35
+35
V
VCM−peak
Common−Mode Peak
−500
500
mV
Cload
Load Capacitance on IC Outputs
10
pF
tpd(rec−dom)
Propagation Delay TxD to RxD
See Figure 7
90
230
ns
tpd(dom−rec)
Propagation Delay TxD to RxD
See Figure 7
90
245
ns
TJ
Junction Temperature
−40
150
°C
See Figures 11 and 12
VCC
3
VCC
AMIS−42665
POR
7
1
TxD
Timer
Thermal
Shutdown
VCC
VCC
8
STB
4
RxD
GND
VSPLIT
Mode &
Wake−up
Control
5
CANL
+
COMP
−
+
2
COMP
−
Figure 1. Block Diagram
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2
VSPLIT
6
Driver
Control
Wake−up
Filter
CANH
PC20050211.1
AMIS−42665
TYPICAL APPLICATION
VBAT
IN
5V−reg
OUT
VCC
VCC
3
STB
7
8
RxD
CAN
4
Controller
AMIS−
42665
TxD
RLT = 60 W
VSPLIT
CLT = 47 nF
5
CANL
R
2
GND
GND
PC20040829.3
Figure 2. Application Diagram
Table 2. PIN LIST AND DESCRIPTIONS
Pin
Name
Description
1
TxD
Transmit Data Input; Low Input → Dominant Driver; Internal Pullup Current
2
GND
Ground
3
VCC
Supply Voltage
4
RxD
Receive Data Output; Dominant transmitter → Low Output
5
VSPLIT
Common−Mode Stabilization Output
6
CANL
Low−Level CAN Bus Line (Low in Dominant Mode)
7
CANH
High−Level CAN Bus Line (High in Dominant Mode)
8
STB
Standby Mode Control Input
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3
CAN
BUS
6
1
CANH
AMIS−42665
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min.
Max.
Unit
−0.3
+7
V
VCC
Supply Voltage
VCANH
DC Voltage at Pin CANH
0 < VCC < 5.25 V; No Time Limit
−50
+50
V
VCANL
DC Voltage at Pin CANL
0 < VCC < 5.25 V; No Time Limit
−50
+50
V
VSPLIT
DC Voltage at Pin VSPLIT
0 < VCC < 5.25 V; No Time Limit
−50
+50
V
VTxD
DC Voltage at Pin TxD
−0.3
VCC + 0.3
V
VRxD
DC Voltage at Pin RxD
−0.3
VCC + 0.3
V
VSTB
DC Voltage at Pin STB
−0.3
VCC + 0.3
V
Vtran(CANH)
Transient Voltage at Pin CANH
Note 1
−300
+300
V
Vtran(CANL)
Transient voltage at Pin CANL
Note 1
−300
+300
V
Vtran(VSPLIT)
Transient Voltage at Pin VSPLIT
Note 1
−300
+300
V
Vesd(CANL/
CANH/VSPLIT)
Electrostatic Discharge Voltage at CANH and
CANL Pin
Note 2
Note 4
−8
−500
+8
+500
kV
V
Vesd
Electrostatic Discharge Voltage at All Other Pins
Note 2
Note 4
−5
−500
+5
+500
kV
V
Latch−up
Static Latch−up at all Pins
Note 3
120
mA
Tstg
Storage Temperature
−55
+150
°C
Tamb
Ambient Temperature
−40
+125
°C
TJ
Maximum Junction Temperature
−40
+170
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 5).
2. Standardized human body model electrostatic discharge (ESD) pulses in accordance to MIL883 method 3015.7.
3. Static latch−up immunity: Static latch−up protection level when tested according to EIA/JESD78.
4. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.
Table 4. THERMAL CHARACTERISTICS
Symbol
Parameter
Conditions
Value
Unit
Rth(vj−a)
Thermal Resistance from Junction−to−Ambient in SOIC−8 Package
In free air
145
K/W
Rth(vj−s)
Thermal Resistance from Junction−to−Substrate of Bare Die
In free air
45
K/W
FUNCTIONAL DESCRIPTION
AMIS−42665 provides two modes of operation as illustrated in Table 5. These modes are selectable through pin STB.
Table 5. OPERATING MODES
Pin RXD
Low
High
Mode
Pin STB
Normal
Low
Bus Dominant
Bus Recessive
Standby
High
Wake−up Request Detected
No Wake−up Request Detected
Normal Mode
Standby Mode
In the normal mode, the transceiver is able to
communicate via the bus lines. The signals are transmitted
and received to the CAN controller via the pins TxD and
RxD. The slopes on the bus lines outputs are optimized to
give extremely low EME.
In standby mode both the transmitter and receiver are
disabled and a very low−power differential receiver
monitors the bus lines for CAN bus activity. The bus lines
are terminated to ground and supply current is reduced to a
minimum, typically 10 mA. When a wake−up request is
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4
AMIS−42665
Overtemperature Detection
detected by the low−power differential receiver, the signal
is first filtered and then verified as a valid wake signal after
a time period of tdbus, the RxD pin is driven low by the
transceiver to inform the controller of the wake−up request.
A thermal protection circuit protects the IC from damage
by switching off the transmitter if the junction temperature
exceeds a value of approximately 160°C. Because the
transmitter dissipates most of the power, the power
dissipation and temperature of the IC are reduced. All other
IC functions continue to operate. The transmitter off−state
resets when Pin TxD goes high. The thermal protection
circuit is particularly needed when a bus line short circuits.
Split Circuit
The VSPLIT Pin is operational only in normal mode. In
standby mode this pin is floating. The VSPLIT is connected
as shown in Figure 2 and its purpose is to provide a stabilized
DC voltage of 0.5 x VCC to the bus avoiding possible steps
in the common−mode signal therefore reducing EME. These
unwanted steps could be caused by an unpowered node on
the network with excessive leakage current from the bus that
shifts the recessive voltage from its nominal 0.5 x VCC
voltage.
TxD Dominant Time−out Function
A TxD dominant time−out timer circuit prevents the bus
lines being driven to a permanent dominant state (blocking
all network communication) if Pin TxD is forced
permanently low by a hardware and/or software application
failure. The timer is triggered by a negative edge on pin TxD.
If the duration of the low−level on Pin TxD exceeds the
internal timer value tdom(TxD), the transmitter is disabled,
driving the bus into a recessive state. The timer is reset by a
positive edge on Pin TxD. See Figure 10.
This TxD dominant time−out time (tdom(TxD)) defines the
minimum possible bit rate to 40 kbps.
Wake−up
When a valid wake−up (dominant state longer than tdbus)
is received during the standby mode the RxD pin is driven
low. Wake−up behavior in case of a permanent dominant –
due to, for example, a bus short – represents the only
difference between the circuit sub−versions listed in the
Ordering Information table. It is depicted in Figures 3 and 4.
When the standby mode is entered while a dominant is
present on the bus, the “unconditioned bus wake−up”
versions will signal a bus−wakeup immediately after the
state transition (seen as a High−level glitch on RxD). The
other version (differing purely by a metal−level
modification in the digital part) will signal bus−wakeup only
after the initial dominant is released. In this way it’s ensured,
that a CAN bus can be put to a low−power mode even if the
nodes have a level sensitivity to RxD pin and a permanent
dominant is present on the bus.
Fail Safe Features
A current−limiting circuit protects the transmitter output
stage from damage caused by accidental short circuit to
either positive or negative supply voltage, although power
dissipation increases during this fault condition.
The pins CANH and CANL are protected from
automotive electrical transients (according to ISO 7637; see
Figure 5). Pins TxD and STB are pulled high internally
should the input become disconnected. Pins TxD, STB and
RxD will be floating, preventing reverse supply should the
VCC supply be removed.
tdbus
tdbus
CANH
CANL
STB
RxD
unconditioned WU
Normal
Standby*
time
*Even if bus dominant signals longer than tdbus are echoed on RxD, the transceiver
stays in standby mode until STB is released.
Figure 3. AMIS42665TJAA1/3 Wake−up Behavior
tdbus
CANH
CANL
STB
RxD
Normal
Standby*
time
*On this derivative, bus dominant signals longer than tdbus are echoed on RxD after the bus passed through
a recessive time following the trigger of STB. The transceiver stays in standby mode until STB is released.
Figure 4. AMIS42665TJAA6 Wake−up Behavior
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5
AMIS−42665
ELECTRICAL CHARACTERISTICS
Definitions
All voltages are referenced to GND (Pin 2). Positive
currents flow into the IC.
CHARACTERISTICS VCC = 4.75 V to 5.25 V; TJ = −40°C to +150°C; RLT = 60 W unless specified otherwise.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
SUPPLY (PIN VCC)
ICC
Supply Current
Dominant; VTxD = 0 V
Recessive; VTxD = VCC
45
4
65
8
mA
ICCS
Supply Current in Standby Mode
TJ,max = 100°C
10
15
mA
TRANSMITTER DATA INPUT (PIN TxD)
VIH
High−Level Input Voltage
Output Recessive
2.0
−
VCC +
0.3
V
VIL
Low−Level Input Voltage
Output Dominant
−0.3
−
+0.8
V
IIH
High−Level Input Current
VTxD = VCC
−5
0
+5
mA
IIL
Low−Level Input Current
VTxD = 0 V
−75
−200
−350
mA
Ci
Input Capacitance
Not Tested
−
5
10
pF
TRANSMITTER MODE SELECT (PIN STB)
VIH
High−Level Input Voltage
Standby Mode
2.0
−
VCC +
0.3
V
VIL
Low−Level Input Voltage
Normal Mode
−0.3
−
+0.8
V
IIH
High−Level Input Current
VSTB = VCC
−5
0
+5
mA
IIL
Low−Level Input Current
VSTB = 0 V
−1
−4
−10
mA
Ci
Input Capacitance
Not Tested
−
5
10
pF
RECEIVER DATA OUTPUT (PIN RxD)
Ioh
High−Level Output Current
Vo = 0.7 x VCC
−5
−10
−15
mA
Iol
Low−Level Output Current
Vo = 0.3 x VCC
5
10
15
mA
BUS LINES (PINS CANH AND CANL)
Vo(reces) (norm)
Recessive Bus Voltage
Normal Mode
VTxD = VCC; No Load
2.0
2.5
3.0
V
Vo(reces) (stby)
Recessive Bus Voltage
VTxD = VCC; No Load
Standby Mode
−100
0
100
mV
Io(reces) (CANH)
Recessive Output Current at Pin CANH
−35 V < VCANH < +35 V;
0 V < VCC < 5.25 V
−2.5
−
+2.5
mA
Io(reces) (CANL)
Recessive Output Current at Pin CANL
−35 V < VCANL < +35 V;
0 V < VCC < 5.25 V
−2.5
−
+2.5
mA
ILI(CANH)
Input Leakage Current to Pin CANH
VCC = 0 V;
VCANL = VCANH = 5 V
−10
−
+10
mA
ILI(CANL)
Input Leakage Current to Pin CANL
VCC = 0 V;
VCANL = VCANH = 5 V
−10
−
+10
mA
Vo(dom) (CANH)
Dominant Output Voltage at Pin CANH
VTxD = 0 V
3.0
3.6
4.25
V
Vo(dom) (CANL)
Dominant Output Voltage at Pin CANL
VTxD = 0 V
0. 5
1.4
1.75
V
Vo(dif) (bus_dom)
Differential Bus Output Voltage
(VCANH − VCANL)
VTxD = 0 V; Dominant;
42.5 W < RLT < 60 W
1.5
2.25
3.0
V
Vo(dif) (bus_rec)
Differential Bus Output Voltage
(VCANH − VCANL)
VTxD = VCC; Recessive;
No Load
−120
0
+50
mV
Io(sc) (CANH)
Short Circuit Output Current at Pin CANH
VCANH = 0 V; VTxD = 0 V
−45
−70
−120
mA
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6
AMIS−42665
CHARACTERISTICS VCC = 4.75 V to 5.25 V; TJ = −40°C to +150°C; RLT = 60 W unless specified otherwise.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCANL = 36 V; VTxD = 0 V
45
70
120
mA
BUS LINES (PINS CANH AND CANL)
Io(sc) (CANL)
Short Circuit Output Current at Pin CANL
Vi(dif) (th)
Differential Receiver Threshold Voltage
(see Figure 6)
−5 V < VCANL < +12 V; −5 V
< VCANH < +12 V;
0.5
0.7
0.9
V
Vihcm(dif) (th)
Differential Receiver Threshold Voltage for
High Common−Mode (See Figure 6)
−35 V < VCANL < +35 V;
−35 V < VCANH < +35 V;
0.40
0.7
1.00
V
Vi(dif) (hys)
Differential Receiver Input Voltage
Hysteresis (see Figure 6)
−35 V < VCANL < +35 V;
−35 V < VCANH < +35 V;
50
70
100
mV
Ri(cm) (CANH)
Common−Mode Input Resistance at Pin
CANH
15
26
37
kW
Ri(cm) (CANL)
Common−Mode Input Resistance at Pin
CANL
15
26
37
kW
Ri(cm) (m)
Matching Between Pin CANH and Pin
CANL Common Mode Input Resistance
−3
0
+3
%
Ri(dif)
Differential Input Resistance
25
50
75
kW
Ci(CANH)
Input Capacitance at Pin CANH
VTxD = VCC; Not Tested
7.5
20
pF
Ci(CANL)
Input Capacitance at Pin CANL
VTxD = VCC; Not Tested
7.5
20
pF
Ci(dif)
Differential Input Capacitance
VTxD = VCC; Not Tested
3.75
10
pF
−
0.7 x
VCC
VCANH = VCANL
COMMON−MODE STABILIZATION (PIN VSPLIT)
VSPLIT
Reference Output Voltage at Pin VSPLIT
Normal Mode;
−500 mA < ISPLIT < 500 mA
0.3 x
VCC
ISPLIT(i)
VSPLIT Leakage Current
Standby Mode
−5
+5
mA
ISPLIT(lim)
VSPLIT Limitation Current
Normal Mode
−3
+3
mA
CANH, CANL in
Tri−State Below POR Level
2.2
3.5
4.5
V
150
160
180
°C
POWER−ON−RESET (POR)
PORL
POR Level
THERMAL SHUTDOWN
TJ(sd)
Shutdown Junction Temperature
TIMING CHARACTERISTICS (see Figures 7 and 8)
td(TxD−BUSon)
Delay TXD to Bus Active
Cl = 100 pF Between CANH
to CANL
40
85
105
ns
td(TxD−BUSoff)
Delay TXD to Bus Inactive
Cl = 100 pF Between CANH
to CANL
30
60
105
ns
td(BUSon−RXD)
Delay Bus Active to RXD
Crxd = 15 pF
25
55
105
ns
td(BUSoff−RXD)
Delay Bus Inactive to RXD
Crxd = 15 pF
40
100
105
ns
tpd(rec−dom)
Propagation Delay TXD to RXD from
Recessive−to−Dominant
Cl = 100 pF Between CANH
to CANL
90
230
ns
td(dom−rec)
Propagation Delay TXD to RXD from
Dominant−to−Recessive
Cl = 100 pF Between CANH
to CANL
90
245
ns
td(stb−nm)
Delay Standby Mode to Normal Mode
10
ms
tdbus
Dominant Time for Wake−up via Bus
tdom(TxD)
TxD Dominant Time for Time Out
Baudrate
Communication Speed Achievable
5
VTxD = 0 V
0.75
2.5
5
ms
300
650
1000
ms
1M
bps
40k
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7
7.5
AMIS−42665
MEASUREMENT SETUPS AND DEFINITIONS
+5 V
100 nF
VCC
3
CANH
7
TxD
1 nF
1
VSPLIT
AMIS−
Transient
Generator
5
42665
RxD
1 nF
4
6
PC20040829.5
CANL
2
8
15 pF
GND
STB
Figure 5. Test Circuit for Automotive Transients
VRxD
High
Low
Hysteresis
PC20040829.7
0.5
Vi(dif)(hys)
0.9
Figure 6. Hysteresis of the Receiver
+5 V
100 nF
VCC
3
7
TxD
CANH
1
VSPLIT
AMIS−
42665
RLT
60 W
RxD
4
6
CANL
8
15 pF
2
GND
STB
PC20040829.4
Figure 7. : Test Circuit for Timing Characteristics
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8
CLT
5
100 pF
AMIS−42665
HIGH
TxD
LOW
CANH
CANL
Dominant
0.9 V
Vi(dif) = VCANH − VCANL
0.5 V
RxD
Recessive
0.7 x VCC
0.3 x VCC
Td(TxD−BUSon)
Td(TxD−BUSoff)
Td(BUSoff−RxD)
Tpd(rec−dom)
Tpd(dom−rec)
PC20040829.6
Figure 8. Timing Diagram for AC Characteristics
td(stb−nm)
STB
Mode
Normal
Standby
Transition delay
time
Figure 9. Transition from Standby to Normal
td(stb−nm)
Time−Out(*)
TxD
CANH
CANL
*The time−out is reset on TxD rising edge.
time
Figure 10. AMIS−42665 TxD Time−Out Bus Blockage Prevention in Case of Controller Failure
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9
AMIS−42665
+5 V
100 nF
VCC
3
7
TxD
6.2 kW
CANH
10 nF
1
Active Probe
AMIS−
42665
Generator
RxD
6
6.2 kW
CANL
Spectrum Anayzer
30 W
4
30 W
5
VSPLIT
2
8
15 pF
STB
GND
47 nF
Figure 11. Basic Test Setup for Electromagnetic Measurement
PC20040829.9
Figure 12. EME Measurements
DEVICE ORDERING INFORMATION
Version
Temperature Range
Package Type
Shipping†
Unconditioned Bus Wake−up
−40°C − 125°C
SOIC−8*
(Pb−Free)
96 Tube / Tray
AMIS42665TJAA1RG
−40°C − 125°C
SOIC−8*
(Pb−Free)
3000 / Tape & Reel
AMIS42665TJAA3L
−40°C − 125°C
SOIC−8**
(Pb−Free)
96 Tube / Tray
AMIS42665TJAA3RL
−40°C − 125°C
SOIC−8**
(Pb−Free)
3000 / Tape & Reel
−40°C − 125°C
SOIC−8*
(Pb−Free)
96 Tube / Tray
−40°C − 125°C
SOIC−8*
(Pb−Free)
2000 / Tape & Reel
Part Number
AMIS42665TJAA1G
AMIS42665TJAA6G
Bus Wake−up Inactive in Case of
Bus Fault
AMIS42665TJAA6RG
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Matte Sn, JEDEC MS−012
** NiPdAu, JEDEC MS−012
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10
AMIS−42665
PACKAGE DIMENSIONS
SOIC−8
CASE 751−07
ISSUE AK
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
−Y−
K
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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