AMI AMIS-732512 50î¼m-pitch wide aperture spectroscopic photodiode array Datasheet

AMIS-732128, AMIS-732256, AMIS-732512
Data Sheet
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays
1.0 Description
AMI Semiconductor’s WSN series is a family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors
employ AMI Semiconductor’s proprietary CMOS image sensing technology to integrate the sensors into a single monolithic chip. These
sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array of photodiodes with
an optimized geometrical aspect ratio (50µm aperture pitch x 2500µm aperture width) for helping to maintain mechanical stability in
spectroscopic instruments and for providing a large light-capturing ability. The family of sensors consists of photodiode arrays of
various lengths - 128, 256 and 512 pixels.
The WSN photodiode arrays are mounted in 22-pin ceramic side-brazed dual-in-line packages that fit in standard DIP sockets. A
diagram of its pin out configuration is seen in Figure 1.
Figure 1: Pin Out Configuration
2.0 Features
•
•
•
•
•
•
•
•
•
•
65pC saturation capacity for wide dynamic range
Wide spectral response (180 – 1000nm) for UV and IR response
NP junction photodiodes with superior resistance to UV damage
Low dark current
Integration time up to nine seconds at room temperature
Integration time extended to hours by cooling
High linearity
Low power dissipation (less than 1mW)
Geometrical structure for enhanced stability and registration
Standard 22 lead dual-in-line IC package
AMI Semiconductor – Dec. 05, M-20491-001
www.amis.com
1
AMIS-732128, AMIS-732256, AMIS-732512
Data Sheet
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays
3.0 Sensor Characteristics
AMI Semiconductor’s self-scanned WSN photodiodes are spaced on a 50µm pitch. The line density is 20 diodes/mm and accordingly
the overall die lengths of the different arrays vary with the number of photodiodes. For example, the 128 pixel array is 6.4mm long, the
256 pixel array is 12.8mm long and the 512 pixel array is 25.6mm long. Each array has four additional dummy photodiodes. On each
side, there is one dark (non-imaging) dummy photodiode and one imaging dummy photodiode. The height of the sensors is 2500µm.
The tall, narrow apertures make these sensors desirable for use in monochromators and spectrographs.
Figure 2: Geometry and Layout of Photodiode Pixels
During normal operation, the photons incident in or near the NP photodiode junction generate free charges that are collected and stored
on the junction's depletion capacitance. The number of collected charges is proportional to the light exposure. Figure 3 shows the
stored signal charge as function of light exposure at a wavelength of 575nm. The exposure is the product of the light intensity in
2
nW/cm and integration time in seconds. The charge accumulates linearly until reaching the saturation charge, and the corresponding
exposure is the saturation exposure.
The responsivity may be calculated as the saturation charge divided by saturation exposure. The predicted typical responsivity of a
-4
2
photodiode is 3.5×10 C/J/cm at 575nm. Figure 4 shows the predicted responsivity of the photodiodes as a function of wavelength.
AMI Semiconductor – Dec. 05, M-20491-001
www.amis.com
2
AMIS-732128, AMIS-732256, AMIS-732512
Data Sheet
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays
Output Charge (pC)
80
70
60
Saturation
Charge
50
40
30
Saturation
Exposure
20
10
0
0
50
100
150
200
250
Exposure (nJ/cm 2)
Figure 3: Stored Signal Charge as a Function of Exposure at a Wavelength of 575nm
Responsivity (C/J/cm 2)
5.0E-04
QE=80%
4.5E-04
4.0E-04
QE=60%
3.5E-04
3.0E-04
QE=40%
2.5E-04
2.0E-04
QE=20%
1.5E-04
1.0E-04
5.0E-05
0.0E+00
100
300
500
700
900
Wavelength (nm)
Figure 4: Predicted Spectral Response
Note: Quantum efficiency (QE) can be calculated by dividing the responsivity by the area of the sensor's element and multiplying the resulting ratio by the energy per photon
in electron volts (eV).
The dark current is typically 0.2pA at 25°C and varies as function of temperature. The dark current will contribute dark-signal charges
and these charges will increase linearly with integration time. The dark signal and the photo generated signal combined result in the
total signal charge.
AMI Semiconductor – Dec. 05, M-20491-001
www.amis.com
3
AMIS-732128, AMIS-732256, AMIS-732512
Data Sheet
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays
4.0 Self-Scanning Circuit
Figure 5 shows a simplified electrically equivalent circuit diagram of the photodiode array. An MOS read switch connects every
photodiode in the array to a common output video line. Incident photons generate electron charge that is collected on each imaging
photodiode while the switch is open. The shift register is activated by the start pulse. A pulse propagates through each shift register
stage and activates the MOS read switches sequentially. As the shift register sequentially closes each read switch, the negative stored
charge, which is proportional in amount to the light exposure, from the corresponding photodiode, is readout onto the video line, QOUT.
Typically, an external charge-integrating amplifier senses the negative output charge on the video line from each photodiode pixel. The
shift register continues scanning the photodiodes in sequence, until the last shift register stage is reach, at which time the fourth and
last dummy pixel is read out and end-of-scan (EOS) output is held high for one clock cycle. The next start pulse can then restart the
shift register.
Figure 5: Simplified Circuit Diagram of a WSN Photodiode Array
AMI Semiconductor – Dec. 05, M-20491-001
www.amis.com
4
AMIS-732128, AMIS-732256, AMIS-732512
Data Sheet
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays
5.0 I/O Pins
Although the WSN package has 22 pins, as shown in Figure 1, there are only six functionally active I/O pins in addition to the supply
pins, as shown in Figure 5. In essence, only two clocks, CLK and START, are required for controlling the timing of the sensor's video
readout. The remaining I/O descriptions are for the video signal output, the end-of-scan signal, the two temperature diodes, and the
supply biases. QOUT must be biased externally to Vbias (see Section 7.0 Recommended Operating Conditions). Each temperature
diode is operated with a small constant current that forward-biases its PN junction. By measuring the forward-bias voltage, one can
track the silicon die temperature. The temperature diodes may be disabled by connecting their anodes to VSS. These I/Os are listed
with their acronym designators and functional descriptions in the following Table 1.
Table 1: Symbols and Functions and I/O Pins
Symbol
Function and Description
VSS
Ground
VDD
+5.0V
START
Start pulse: input to start the line scan
CLK
Clock pulse: input to clock the shift register
EOS
End of scan: output from the shift register to indicate the completion of one line scan
QOUT
Video charge output: output from the photodiodes pixels
TD1
Temperature diode 1: anode of temperature diode 1
TD2
Temperature diode 2: anode of temperature diode 2
NC
No connection
6.0 Clock and Voltage Requirements
The clocking requirements are relatively simple. As it was indicated in Figure 5 and Table 1, there are only two input signals that require
clocked inputs. They are CLK, the clock for the shift register, and START, the shift register start pulse. The timing specifications and the
symbol definition for Figure 6 are listed in Table 2. The control clock amplitudes for I/Os are compatible with the 5V CMOS devices.
Figure 6: Timing Diagram
AMI Semiconductor – Dec. 05, M-20491-001
www.amis.com
5
AMIS-732128, AMIS-732256, AMIS-732512
Data Sheet
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays
Table 2: Symbol Definitions and Timing Specifications for Timing Diagram
Item
Symbol
Min.
666 (AMIS-732128)
Clock cycle time
to
666 (AMIS-732256)
1000 (AMIS-732512)
566 (128WSN)
Clock high pulse width
twh
566 (256WSN)
900 (512WSN)
Clock low pulse width
twl
100
Clock duty cycle
1
Data setup time
tds
100
Data hold time
tdh
100
EOS low-to-high delay
telh
EOS high-to-low delay
tehl
Signal delay time
tsd
50
Signal settling time
tsh
Signal settle to clock edge
tsch
Typ.
Max.
10000
Units
ns
ns
50
99
400
400
566 (AMIS-732128)
566 (AMIS-732256)
900 (AMIS-732512)
0
ns
%
ns
ns
ns
ns
ns
ns
ns
7.0 Recommended Operating Conditions
The following table lists the recommended operating conditions.
o
Table 3: Recommended Operating Conditions at 25 C
Parameters
Symbol
Power supply
VDD
1
Input clock pulses high level
Vih
1
Input clock pulse low level
Vil
Video charge output external bias
Vbias
Clock frequency
Integration time
Notes:
1.
2.
2
Min.
4.5
VDD – 0.8
0.0
VDD – 0.5
Fclk
Tint
Typ.
5.0
VDD
0.0
VDD – 0.5
0.1
0.09 (AMIS-732128)
0.18 (AMIS-732256)
0.52 (AMIS-732512)
Max.
5.5
VDD
0.8
VDD
1.5 (AMIS-732128)
1.5 (AMIS-732256)
1.0 (AMIS-732512)
Units
V
V
V
V
9000
ms
MHz
Applies to all control-clock inputs.
The Integration time is specified at room temperature such that the maximum dark current charge build up in each pixel is less than 10 percent of the minimum
saturation charge. Accordingly, it may be as long as nine seconds at room temperature. Longer integration times may be achieved by cooling the device. An
appropriate clock frequency must be chosen so that the shift register completes its operation within the desired integration time.
AMI Semiconductor – Dec. 05, M-20491-001
www.amis.com
6
AMIS-732128, AMIS-732256, AMIS-732512
Data Sheet
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays
8.0 Electro-Optical Characteristics
The following table lists the electro-optical characteristics.
°
Table 4: Electro-Optical Characteristics at 25 C
Parameters
Center-to-center spacing
Aperture width
Pixel area
1
Fill factor
1,2
Quantum efficiency
1,2
Responsivity
3
Non-uniformity of response
2
Saturation exposure
4
Saturation charge
5
Average dark current
Spectral response peak
Spectral response range
Notes:
1.
2.
3.
4.
5.
6.
Symbol
Min.
Typ.
50
2500
-3
1.25x10
86
70
-4
3.5×10
2
185
65
0.2
600
A
FF
QE
R
Esat
Qsat
160
55
λ
6
Max.
5
0.6
180 – 1000
Units
µm
µm
2
cm
%
%
2
C/J/cm
+/-%
2
nJ/cm
pC
pA
nm
nm
Fill factor, quantum efficiency and responsivity are related by the equation R = (qeλ/hc) QE FF A, where qe is the charge of an electron and hc/λ is the energy of a
photon at a given wavelength. Responsivity is therefore given per pixel.
At wavelength of 575nm (yellow-green) and with no window.
Measured at 50 percent Vsat with an incandescent tungsten lamp filtered with an Schott KG-1 heat-absorbing filter.
Saturation charge specified for a video output bias of 4.5V.
Max. dark leakage ≤ 1.5 x average dark leakage measured with an integration period of 500ms at 25oC.
From 250-1000nm, responsivity ≥ 20 percent of its peak value.
AMI Semiconductor – Dec. 05, M-20491-001
www.amis.com
.
7
.
.
AMIS-732128, AMIS-732256, AMIS-732512
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays
9.0 Package Dimensions
The following figure provides the package dimensions.
Device
PI0128WSN
PI0256WSN
PI0512WSN
A
1.08 ±0.01
1.08 ±0.01
1.6 ±0.01
B
6.4mm
12.8mm
25.6mm
Figure 7: Package Dimensions
Note: Dimensions are in inches except where millimeters (mm) are indicated.
AMI Semiconductor – Dec. 05, M-20491-001
www.amis.com
8
Data Sheet
AMIS-732128, AMIS-732256, AMIS-732512
Data Sheet
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays
10.0 Company or Product Inquiries
For more information about AMI Semiconductor, our technology and our product, visit our Web site at: http://www.amis.com
North America
Tel: +1.208.233.4690
Fax: +1.208.234.6795
Europe
Tel: +32 (0) 55.33.22.11
Fax: +32 (0) 55.31.81.12
Production Technical Data - The information contained in this document applies to a product in production. AMI Semiconductor and its subsidiaries (“AMIS”) have made every effort to ensure
that the information is accurate and reliable. However, the characteristics and specifications of the product are subject to change without notice and the information is provided “AS IS” without
warranty of any kind (express or implied). Customers are advised to obtain the latest version of relevant information to verify that data being relied on is the most current and complete. AMIS
reserves the right to discontinue production and change specifications and prices at any time and without notice. Products sold by AMIS are covered by the warranty and patent
indemnification provisions appearing in its Terms of Sale only. AMIS makes no other warranty, express or implied, and disclaims the warranties of noninfringement, merchantability, or fitness
for a particular purpose. AMI Semiconductor's products are intended for use in ordinary commercial applications. These products are not designed, authorized, or warranted to be suitable for
use in life-support systems or other critical applications where malfunction may cause personal injury. Inclusion of AMIS products in such applications is understood to be fully at the
customer’s risk. Applications requiring extended temperature range, operation in unusual environmental conditions, or high reliability, such as military or medical life-support, are specifically
not recommended without additional processing by AMIS for such applications. Copyright © 2005 AMI Semiconductor, Inc.
AMI Semiconductor – Dec. 05, M-20491-001
www.amis.com
9
Similar pages