DATA SHEET ER3A Thru ER3J SEMICONDUCTOR SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 to 600 Volts CURRENT - 3.0 Ampere FEATURES SMB/DO-214AA •For surface mounted applications Unit:inch(mm) •High temperature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers .083(2.11) .075(1.91) •Glass passivated junction .155(3.94) .130(3.30) •Built-in strain relief •Easy pick and place •Plastic package has Underwriters Laboratory Flammability Classification 94V-O .185(4.70) .160(4.06) •Complete device submersible temperature of 260°C for 10 .012(.305) .006(.152) seconds in solder bath •High temperature soldering : 260OC / 10 seconds at terminals .096(2.44) .083(2.13) •Pb free product at available : 99% Sn above meet RoHS environment substance directive request .012(.31) .006(.15) MECHANICAL DATA .050(1.27) .030(0.76) .008(.203) .002(.051) •Case: JEDEC DO-214AA molded plastic .220(5.59) .200(5.08) •Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 •Polarity: Indicated by cathode band •Standard packaging: 12mm tape (EIA-481) •Weight: 0.003 ounce, 0.093 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. UNITS ER3A ER3B ER3C ER3D ER3E ER3G ER3J Maximum Recurrent Peak Reverse Voltage 50 100 150 200 300 400 600 V Maximum RMS Voltage 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current, at TL=75℃ Peak Forward Surge Current 8.3ms single half sinewave superimposed on rated load(JEDEC method) 3.0 A 100.0 A 1.25 0.95 Maximum Instantaneous Forward Voltage at 3.0A 1.70 V 5.0 µA At Rated DC Blocking Voltage TA=100℃ 200 µA Maximum Reverse Recovery Time (Note 1) 35.0 nS Typical Junction capacitance (Note 2) 45.0 pF 16 ℃/W -55 to +150 ℃ Maximum DC Reverse Current TA=25℃ Typical Thermal Resistance (Note 3) RθJA Operating and Storage Temperature Range TJ NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1 MHz and applied Vr = 4.0 volts. 3. 8.0 mm2 ( .013mm thick ) land areas. http://www.yeashin.com 1 REV.02 20121119 DEVICE CHARACTERISTICS ER3A Thru ER3J AVERAGE FORWARD CURRENT, AMPERS 10W Noninductive 50W Noninductive (-) (+) PULSE GENERATOR *Note2 25 Vdc (approx) (-) 1W Noninductive (+) OSCILLOSCOPE *Note1 t rr Notes: +0.5A 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pF 0 2. Rise Time=10ns max. Source Impedance= 50 Ohms 22pF -0.25 4.0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 8.0x8.0mm COPPER LAND AREAS 3.0 2.0 1.0 50 60 70 80 90 100 110 2 4 5 6 LEAD TEMPERATURE, C O -1.0 1cm SET TIME BAS FOR 10ns/cm FORWARD CURRENT DERATING CURVE TJ=100 C O 100 10 TJ=75 C O TJ=25 C O 1.0 0.1 0.01 2 40 60 80 60 80 100 INSTANTANEOUS FORWARD CURRENT, Ampers INSTANTANEOUS REVERSE CURRENT, mAmpers REVERSE RECOVERY TIME CHARACTERISTIC AND TEST DIAGRAM 100 120 140 50-200V 10 300-400V 0.1 O TJ=25 C PULSE WIDTH= 300mS 2% DUTY CYCLE 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, Volts PERCENT OF RATED PEAK INVERSE VOLTAGE, Volts TYPICAL REVERSE CHARACTERISTICS TYPICAL FORWARD CHARACTERISTICS 100 110 90 100 CAPACITANCE, PF PEAK FORWARD SURGE CURRENT, Ampers 600V 1.0 90 80 70 80 70 60 50 40 30 TJ = 25 C f = 1.0MHZ Vsig = 50mVp-p 20 60 50 10 8.3ms SINGLE HALF SINE-WAVE JEDC METHOD 1 5 10 0 50 100 0.1 1 10 100 1000 REVERSE VOLTAGE, Volts NUMBER OF CYCLES AT 60Hz TYPICAL JUNCTION CAPACITANCE MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT http://www.yeashin.com O 2 REV.02 20121119 PACKAGE OUTLINE & DIMENSIONS ER3A Thru ER3J 0.118 (3.00) C 0.142 (3.60) A B 0.059 (1.50) Dimensions in inches and (millimeters) http://www.yeashin.com 3 REV.02 20121119