COMCHIP SMD Gen er al Purpose Rect ifier s SMD Diodes Specialist CGRB201-G Thru. CGRB207-G Glass Passivated Type Reverse Voltage: 50 to 1000 Volts Forward Current: 2.0 Amp RoHS Device DO-214AA (SMB) Features -Ideal for surface mount applications. 0.185(4.70) 0.160(4.06) -Easy pick and place. -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.155(3.94) 0.130(3.30) 0.083(2.11) 0.075(1.91) -Built in strain relief. -High surge current capability. 0.220(5.59) 0.200(5.08) 0.012(0.31) 0.006(0.15) Mechanical data 0.096(2.44) 0.083(2.13) -Case: JEDEC DO-214AA, molded plastic. 0.008(0.20) 0.004(0.10) 0.050(1.27) 0.030(0.76) -Terminals: solderable per MIL-STD-750, method 2026. -Polarity: Color band denotes cathode end. Dimensions in inches and (millimeter) -Approx. weight: 0.093 grams Maximum Ratings and Electrical Characteristics Symbol CGRB 201-G CGRB 202-G CGRB 203-G CGRB 204-G CGRB 205-G CGRB 206-G CGRB 207-G Units Max. repetitive peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Max. DC blocking voltage V DC 50 100 200 400 600 800 1000 V Max. RMS voltage V RMS 35 70 140 280 420 560 700 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) I FSM 60 A Max. average forward current IO 2.0 A Max. instantaneous forward voltage at 2.0A VF 1.1 V Max. DC reverse current at T A =25 OC rated DC blocking voltage T A =125 OC IR 5.0 100 μA RθJL 16 TJ 150 O C T STG -55 to +150 O C Parameter Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature O C/W Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm 2 square (0.13mm thick) land area. REV:A Page 1 QW-BG003 Comchip Technology CO., LTD. COMCHIP SMD Gen er al Purpose Rect ifier s SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CGRB201-G thru CGRB207-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 100 100 F o r w a rd C u rren t (A) Rever s e C urr e n t (μA ) 10 O T J =125 C 1 T J =75 OC 0.1 T J =25 OC 10 1 0.1 T J =25 OC Pulse width 300μS 4% duty cycle 0.01 0.001 0 20 40 60 80 100 120 0.01 0.4 140 0.6 Fig.3 Junction Capacitance 1.0 1.2 1.4 1.6 1.8 Fig.4 Current Derating Curve 100 2.8 Average Forward Current (A) J u n c ti o n C apaci t ance (p F ) 0.8 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) 10 T J =25 OC f=1MHz Vsig=50mVp-p 1 0.1 Single phase, half wave 60Hz, resistive or inductive load 2.4 2.0 1.6 1.2 0.8 0.4 0 1 10 100 40 60 80 100 120 140 160 180 Ambient Temperature ( OC) Reverse Voltage (V) Fig.5 Non-repetitive Forward Surge Current 60 Pe a k F o r w a rd S u rge C u r rent (A ) O T J =25 C 8.3ms single half sine wave, JEDEC method 50 40 30 20 10 0 1 10 100 Number of Cycles at 60Hz REV:A Page 2 QW-BG003 Comchip Technology CO., LTD.