Comchip CGRB201-G Smd general purpose rectifier Datasheet

COMCHIP
SMD Gen er al Purpose Rect ifier s
SMD Diodes Specialist
CGRB201-G Thru. CGRB207-G
Glass Passivated Type
Reverse Voltage: 50 to 1000 Volts
Forward Current: 2.0 Amp
RoHS Device
DO-214AA (SMB)
Features
-Ideal for surface mount applications.
0.185(4.70)
0.160(4.06)
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.155(3.94)
0.130(3.30)
0.083(2.11)
0.075(1.91)
-Built in strain relief.
-High surge current capability.
0.220(5.59)
0.200(5.08)
0.012(0.31)
0.006(0.15)
Mechanical data
0.096(2.44)
0.083(2.13)
-Case: JEDEC DO-214AA, molded plastic.
0.008(0.20)
0.004(0.10)
0.050(1.27)
0.030(0.76)
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
Dimensions in inches and (millimeter)
-Approx. weight: 0.093 grams
Maximum Ratings and Electrical Characteristics
Symbol
CGRB
201-G
CGRB
202-G
CGRB
203-G
CGRB
204-G
CGRB
205-G
CGRB
206-G
CGRB
207-G
Units
Max. repetitive peak reverse voltage
V RRM
50
100
200
400
600
800
1000
V
Max. DC blocking voltage
V DC
50
100
200
400
600
800
1000
V
Max. RMS voltage
V RMS
35
70
140
280
420
560
700
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
I FSM
60
A
Max. average forward current
IO
2.0
A
Max. instantaneous forward voltage at
2.0A
VF
1.1
V
Max. DC reverse current at T A =25 OC
rated DC blocking voltage T A =125 OC
IR
5.0
100
μA
RθJL
16
TJ
150
O
C
T STG
-55 to +150
O
C
Parameter
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
O
C/W
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm 2 square (0.13mm thick) land area.
REV:A
Page 1
QW-BG003
Comchip Technology CO., LTD.
COMCHIP
SMD Gen er al Purpose Rect ifier s
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CGRB201-G thru CGRB207-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
100
100
F o r w a rd C u rren t (A)
Rever s e C urr e n t (μA )
10
O
T J =125 C
1
T J =75 OC
0.1
T J =25 OC
10
1
0.1
T J =25 OC
Pulse width 300μS
4% duty cycle
0.01
0.001
0
20
40
60
80
100
120
0.01
0.4
140
0.6
Fig.3 Junction Capacitance
1.0
1.2
1.4
1.6
1.8
Fig.4 Current Derating Curve
100
2.8
Average Forward Current (A)
J u n c ti o n C apaci t ance (p F )
0.8
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
10
T J =25 OC
f=1MHz
Vsig=50mVp-p
1
0.1
Single phase, half
wave 60Hz, resistive
or inductive load
2.4
2.0
1.6
1.2
0.8
0.4
0
1
10
100
40
60
80
100
120
140
160
180
Ambient Temperature ( OC)
Reverse Voltage (V)
Fig.5 Non-repetitive Forward Surge Current
60
Pe a k F o r w a rd S u rge C u r rent (A )
O
T J =25 C
8.3ms single half sine
wave, JEDEC method
50
40
30
20
10
0
1
10
100
Number of Cycles at 60Hz
REV:A
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Comchip Technology CO., LTD.
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