Jiangsu MCR100-8 Silicon controlled rectifier Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Thyristors
SOT-89-3L
MCR100- 6,- 8
Silicon Controlled Rectifier
1.KATHODE
FEATURES
2.ANODE
Current-IGT : 200 µA
3.GATE
ITRMS : 0.8 A
VRRM/ VDRM : MCR100-6: 400 V
MCR100-8: 600 V
Operating and storage junction temperature range
TJ,Tstg : -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Unit
On state voltage
VTM*
ITM=1A
1.7
V
Gate trigger voltage
VGT
VAK=7V
0.8
V
Peak Repetitive forward and reverse
VDRM
blocking voltage
IDRM= 10 µA
AND
MCR100-6
VRRM
MCR100-8
600
Peak forward or reverse blocking
IDRM
VAK= Rated
Current
IRRM
VDRM or VRRM
10
IHL= 20mA ,VAK = 7 V
IH
Holding current
Gate trigger current
V
400
µA
5
mA
A2
5
15
µA
A1
15
30
µA
A
30
80
µA
B
80
200
µA
VAK=7V
IGT
* Forward current applied for 1 ms maximum duration,duty cycle≤1%。
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D,Sep,2015
Typical Characteristics
IGT ——
Ta
Pulsed
VAK=7V
Ta
IH (uA)
Pulsed
IT=20mA、IG=50mA
40
30
20
300
200
100
10
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
0
25
125
50
75
100
AMBIENT TEMPERATURE
(℃ )
VGT —— Ta
0.7
6
ON-STATE CURRENT
IT (A)
0.6
0.5
0.4
Ta
125
(℃ )
IT —— V
TM
7
Pulsed
VAK=7V
GATE TRIGGER VOLTAGE VGT (V)
IH ——
400
HOLDING CURRENT
GATE TRIGGER CURRENT IGT (uA)
50
Pulsed
IG=50mA
o
Ta=100 C
Ta=25℃
5
4
3
2
0.3
1
0.2
25
50
75
AMBIENT TEMPERATURE
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100
Ta
0
0.0
125
(℃ )
0.5
1.0
1.5
ON-STATE VOLTAGE
2
2.0
VTM
2.5
3.0
(V)
D,Sep,2015
SOT-89-3L Package Outline Dimensions
Dimensions In Millimeters
Max
Min
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
0.118 TYP.
0.035
0.047
SOT-89-3L Suggested Pad Layout
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D,Sep,2015
SOT-89-3L Tape and Reel
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D,Sep,2015
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