GT60N322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed • • Low saturation voltage : VCE (sat) = 2.4 V (typ.) (IC = 60 A) FRD included between emitter and collector • TO-3P(LH) (Toshiba package name) : tf = 0.11 μs (typ.) (IC = 60 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1000 V Gate-emitter voltage VGES ±25 V @ Tc = 100°C Continuous collector current @ Tc = 25°C Pulsed collector current Diode forward current Collector power dissipation IC 29 57 ICP 120 DC IF 15 Pulsed IFP 120 @ Tc = 100°C @ Tc = 25°C Junction temperature Storage temperature range PC 80 200 A A A W JEDEC ― JEITA ― TOSHIBA Tj 150 °C Tstg −55 to 150 °C 2-21F2C Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 0.625 °C/W Thermal resistance (diode) Rth (j-c) 4.0 °C/W Equivalent Circuit Marking Collector Part No. (or abbreviation code) TOSHIBA GT60N322 Gate Lot No. JAPAN Emitter A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT60N322 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES VCE = 1000 V, VGE = 0 ― ― 0.1 mA VGE (OFF) IC = 60 mA, VCE = 5 V 4.0 ― 7.0 V VCE (sat) IC = 60 A, VGE = 15 V ― 2.4 2.9 V VCE = 10 V, VGE = 0, f = 1 MHz ― 4200 ― pF Resistive Load ― 0.33 ― VCC = 600 V, IC = 60 A ― 0.45 ― VGG = ±15 V, RG = 51 Ω ― 0.11 0.22 ― 0.41 ― Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies tr Rise time Switching time Turn-on time ton Fall time tf Turn-off time (Note 1) toff μs Diode forward voltage VF IF = 15 A, VGE = 0 ― 1.2 1.9 V Reverse recovery time trr IF = 60 A, di/dt = −20 A/μs ― 0.75 1.7 µs Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 RG RL IC 0 90% VCC 0 90% 10% VCE 10% td (off) tf toff 2 tr ton 2006-11-01 GT60N322 IC – VCE 120 10 Common emitter 100 Tc = -40°C 10 15 8 (A) 20 Collector current IC 80 60 40 7 20 80 60 40 7 20 VGE = 6 V 0 0 1 2 3 4 Collector-emitter voltage 5 0 0 6 VCE (V) VGE = 6 V 1 2 20 VCE (V) (A) (A) Collector current IC 60 7 40 20 3 4 Collector-emitter voltage 5 80 60 40 25 20 VGE = 6 V 2 6 Common emitter 100 V CE = 5V 15 8 1 5 IC – VGE 80 0 0 4 120 10 Common emitter 100 Tc = 125°C 3 Collector-emitter voltage IC – VCE 120 Collector current IC 20 Common emitter 100 Tc = 25°C 8 15 (A) Collector current IC IC – VCE 120 40 Tc = 125 °C 0 0 6 2 4 Gate-emitter voltage VCE (V) 6 8 10 VGE (V) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 4 Common emitter VGE = 15 V IC = 80 A 3 60 30 2 10 1 0 −60 −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT60N322 VCE, VGE – QG C – VCE 20 100 10 VCE = 150 V 50 50 0 0 100 60 5 120 Cies 5000 3000 1000 500 300 Coes 100 50 30 Cres 10 0 0 240 180 Gate charge QG (pF) 15 Capacitance C 150 10 Switching Time – RG 10000 VCE (V) Switching Time – IC Common emitter VCC = 600 V IC = 60 A VGG = ±15 V 1 Tc = 25°C toff ton Switching time (µs) Switching time (µs) 1000 10 3 tr 0.5 0.3 tf 0.1 0.05 Common emitter 5 VCC = 600 V 3 RG = 51 Ω VGG = ±15 V Tc = 25°C 1 0.5 toff 0.3 tr ton 0.1 tf 0.05 0.03 0.03 0.01 1 10 100 Gate resistance 0.01 1 1000 10 20 RG (Ω) 30 40 Collector current IC Safe Operating Area 50 * Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* 300 Collector current IC IC max (continuous) 50 30 1 ms* DC operation 10 µs* 100 µs* 10 Tj < = 125°C VGG = 20 V 500 RG = 10 Ω (A) (A) 300 70 (A) 1000 500 60 Reverse Bias SOA 1000 Collector current IC 100 Collector-emitter voltage (nC) 5 100 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 10000 VGE (V) Common emitter RL = 2.5 Ω Tc = 25°C 30000 Gate-emitter voltage Collector-emitter voltage VCE (V) 200 5 3 100 50 30 10 5 3 10 ms * 1 1 3 10 30 100 300 1000 1 1 3000 Collector- emitter voltage VCE (V) 3 10 30 100 Collector-emitter voltage 4 300 1000 3000 VCE (V) 2006-11-01 GT60N322 Rth (t) – tw Transient thermal impedance Rth (t) (°C/W) Tc = 25°C 101 Diode stage 10 0 IGBT stage 10−1 10−2 10−5 10−4 10−3 10−2 100 10−1 Pulse width 101 tw (s) IC max – Tc IF – VF 100 Common emitter VGE = 15 V 50 Common collector (A) 80 40 Forward current IF 30 20 60 40 −40 20 10 75 100 Tc 125 0 0.0 150 0.5 (°C) 1.0 Forward voltage VF trr, lrr – IF 8 0.4 lrr 0.2 7 6 40 Forward current IF 60 Irr Reverse recovery time 0.6 Peak reverse recovery current 9 trr (µs) (A) Common Collector di/dt = −20 A/µs Tc = 25°C 20 2.5 (V) 1.0 10 trr 0.0 0 2.0 trr, lrr – di/dt 1.0 0.8 1.5 0.8 40 trr 0.6 30 0.4 20 lrr 0.2 0.0 0 5 80 50 Common collector IF = 60 A Tc = 25°C (A) 50 10 40 80 di/dt (A) 5 120 160 Irr 0 25 Case temperature trr (µs) 25 Tc = 125 °C Peak reverse recovery current Maximum DC collector current ICmax (A) 60 Reverse recovery time 102 0 200 (A/µs) 2006-11-01 GT60N322 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01