Central CWDM305ND Surface mount dual n-channel enhancement-mode silicon mosfet Datasheet

CWDM305ND
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CWDM305ND is
a dual, high current N-channel enhancement-mode
silicon MOSFET designed for high speed pulsed
amplifier and driver applications. This energy efficient
MOSFET offers beneficially low rDS(ON), low gate
charge, and low threshold voltage.
MARKING CODE: C305
SOIC-8 CASE
APPLICATIONS:
• Load/Power switches
• DC-DC converter circuits
• Power management
FEATURES:
• Low rDS(ON)
• High current
• Low gate charge
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
SYMBOL
VDS
VGS
30
UNITS
V
20
V
Continuous Drain Current (Steady State)
ID
5.8
A
Maximum Pulsed Drain Current, tp=10μs
IDM
PD
23.2
A
2.0
W
TJ, Tstg
ΘJA
-55 to +150
°C
62.5
°C/W
Gate-Source Voltage
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR
VGS=20V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
Qg(tot)
Qgs
Qgd
ton
toff
VGS=0, ID=250μA
VGS=VDS, ID=250μA
MAX
100
UNITS
nA
1.0
μA
3.0
V
0.024
0.030
Ω
0.028
0.034
Ω
30
V
1.0
VGS=10V, ID=2.9A
VGS=5.0V, ID=2.9A
VDS=5.0V, ID=5.8A
VDS=10V, VGS=0, f=1.0MHz
12
50
54
pF
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
500
560
pF
52
90
pF
VDD=15V,
VDD=15V,
ID=5.8A
4.2
6.3
nC
ID=5.8A
VDD=15V, VGS=5.0V, ID=5.8A
VDD=15V, ID=5.8A, RG=10Ω
VDD=15V, ID=5.8A, RG=10Ω
0.9
1.4
nC
1.4
2.1
nC
VGS=5.0V,
VGS=5.0V,
S
6.5
ns
8.5
ns
R3 (1-November 2012)
CWDM305ND
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOIC-8 CASE - MECHANICAL OUTLINE
SUGGESTED MOUNTING PADS
(Dimensions in mm)
PIN CONFIGURATION
LEAD CODE:
1) Source Q1
2) Gate Q1
3) Source Q2
4) Gate Q2
5)
6)
7)
8)
Drain
Drain
Drain
Drain
Q2
Q2
Q1
Q1
MARKING CODE: C305
R3 (1-November 2012)
w w w. c e n t r a l s e m i . c o m
CWDM305ND
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (1-November 2012)
w w w. c e n t r a l s e m i . c o m
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