CWDM305ND SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305ND is a dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE: C305 SOIC-8 CASE APPLICATIONS: • Load/Power switches • DC-DC converter circuits • Power management FEATURES: • Low rDS(ON) • High current • Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS VGS 30 UNITS V 20 V Continuous Drain Current (Steady State) ID 5.8 A Maximum Pulsed Drain Current, tp=10μs IDM PD 23.2 A 2.0 W TJ, Tstg ΘJA -55 to +150 °C 62.5 °C/W Gate-Source Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS(th) rDS(ON) rDS(ON) gFS Crss Ciss Coss Qg(tot) Qgs Qgd ton toff VGS=0, ID=250μA VGS=VDS, ID=250μA MAX 100 UNITS nA 1.0 μA 3.0 V 0.024 0.030 Ω 0.028 0.034 Ω 30 V 1.0 VGS=10V, ID=2.9A VGS=5.0V, ID=2.9A VDS=5.0V, ID=5.8A VDS=10V, VGS=0, f=1.0MHz 12 50 54 pF VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz 500 560 pF 52 90 pF VDD=15V, VDD=15V, ID=5.8A 4.2 6.3 nC ID=5.8A VDD=15V, VGS=5.0V, ID=5.8A VDD=15V, ID=5.8A, RG=10Ω VDD=15V, ID=5.8A, RG=10Ω 0.9 1.4 nC 1.4 2.1 nC VGS=5.0V, VGS=5.0V, S 6.5 ns 8.5 ns R3 (1-November 2012) CWDM305ND SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOIC-8 CASE - MECHANICAL OUTLINE SUGGESTED MOUNTING PADS (Dimensions in mm) PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Source Q2 4) Gate Q2 5) 6) 7) 8) Drain Drain Drain Drain Q2 Q2 Q1 Q1 MARKING CODE: C305 R3 (1-November 2012) w w w. c e n t r a l s e m i . c o m CWDM305ND SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R3 (1-November 2012) w w w. c e n t r a l s e m i . c o m