PD - 97587A
IRFML8244TRPbF
VDS
25
V
VGS Max
± 20
V
24
m
41
m
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
HEXFET® Power MOSFET
* '
6 Micro3TM (SOT-23)
IRFML8244TRPbF
Application(s)
Load/ System Switch
Features and Benefits
Features
Benefits
Low RDS(on) ( 24m)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
VDS
Parameter
Max.
Units
25
V
ID @ TA = 25°C
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
5.8
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
4.6
IDM
Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
1.25
PD @TA = 70°C
Maximum Power Dissipation
0.80
A
24
W
Linear Derating Factor
0.01
VGS
Gate-to-Source Voltage
± 20
W/°C
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Symbol
Parameter
e
RJA
Junction-to-Ambient
RJA
Junction-to-Ambient (t<10s)
f
Typ.
Max.
–––
100
–––
99
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
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1
02/29/12
IRFML8244TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
Drain-to-Source Leakage Current
Min. Typ. Max. Units
25
–––
–––
–––
0.02
–––
–––
20
24
–––
32
41
1.35
1.7
2.35
–––
–––
1.0
–––
–––
150
V
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
m
V
μA
VGS = 4.5V, ID
VDS = VGS, ID = 10μA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
1.6
–––
gfs
Qg
Forward Transconductance
10
–––
–––
S
Total Gate Charge
–––
5.4
–––
Qgs
Gate-to-Source Charge
–––
1.0
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
0.81
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
2.7
–––
VDD
tr
Rise Time
–––
2.1
–––
td(off)
Turn-Off Delay Time
–––
9.0
–––
tf
Fall Time
–––
2.9
–––
Ciss
Input Capacitance
–––
430
–––
Coss
Output Capacitance
–––
110
–––
Crss
Reverse Transfer Capacitance
–––
49
–––
nA
d
= 4.6A d
VGS = 10V, ID = 5.8A
VGS = 20V
VGS = -20V
VDS = 10V, ID = 5.8A
ID = 5.8A
nC
ns
VDS =13V
d
d
=13V
ID = 1.0A
RG = 6.8
VGS = 10V
VGS = 0V
pF
VDS = 10V
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
c
Min. Typ. Max. Units
–––
–––
1.25
A
–––
24
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
1.2
V
trr
Reverse Recovery Time
–––
11
17
ns
Qrr
Reverse Recovery Charge
–––
4.2
6.3
nC
2
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = 5.8A, VGS = 0V
TJ = 25°C, VR = 20V, IF=5.8A
di/dt = 100A/μs
d
d
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IRFML8244TRPbF
100
ID, Drain-to-Source Current (A)
TOP
10
BOTTOM
1
VGS
15V
10V
4.5V
4.0V
3.8V
3.5V
3.3V
3.0V
3.0V
TOP
ID, Drain-to-Source Current (A)
100
BOTTOM
10
3.0V
60μs PULSE WIDTH
60μs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.1
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
15V
10V
4.5V
4.0V
3.8V
3.5V
3.3V
3.0V
10
T J = 150°C
T J = 25°C
1
VDS = 15V
60μs PULSE WIDTH
0.1
1.4
ID = 5.8A
VGS = 10V
1.2
1.0
0.8
0.6
2.0
2.5
3.0
3.5
4.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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4.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRFML8244TRPbF
10000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 5.8A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C, Capacitance (pF)
C oss = C ds + C gd
1000
Ciss
Coss
100
Crss
12.0
VDS= 20V
VDS= 13V
10.0
VDS= 5.0V
8.0
6.0
4.0
2.0
10
0.0
1
10
100
0
1
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 150°C
T J = 25°C
1
4
5
6
7
8
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
10
3
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
0.1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
10
10msec
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2
1.1
0.10
1.0
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFML8244TRPbF
6
RD
V DS
ID, Drain Current (A)
5
VGS
D.U.T.
RG
4
+
- VDD
VGS
3
Pulse Width µs
Duty Factor
2
Fig 10a. Switching Time Test Circuit
1
VDS
90%
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
1000
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFML8244TRPbF
RDS(on), Drain-to -Source On Resistance ( m)
RDS(on), Drain-to -Source On Resistance (m )
80
ID = 5.8A
70
60
50
40
T J = 125°C
30
20
T J = 25°C
10
0
2
4
6
8
10
12
14
16
18
20
50
45
40
Vgs = 4.5V
35
30
25
20
Vgs = 10V
15
10
5
0
0
5
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance vs. Gate
Voltage
10
15
20
25
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain
Current
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
50K
12V
.2F
.3F
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRFML8244TRPbF
1000
2.4
800
2.2
Single Pulse Power (W)
VGS(th) , Gate threshold Voltage (V)
2.6
2.0
1.8
1.6
1.4
ID = 10μA
ID = 250μA
1.2
600
400
200
1.0
0.8
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage vs.
Junction Temperature
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0
1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Time (sec)
Fig 16. Typical Power vs. Time
7
IRFML8244TRPbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
6
5
SYMBOL
D
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
A
A2
3
6
C
E
E1
1
2
0.15 [0.006] M C B A
0.10 [0.004] C
A1
5
B
3X b
e
0.20 [0.008] M C B A
NOTES:
e1
H 4
L1
Recommended Footprint
c
L2
0.972
0.950
0.802
3X L
7
1.900
MILLIMETERS
INCHES
MIN
MAX
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MAX
0.0004 %6&
%6&
REF
BSC
0
8
2.742
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23/TO-236AB) Part Marking Information
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DATE CODE MARKING INSTRUCTIONS
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFML8244TRPbF
Micro3Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRFML8244TRPbF
Orderable part number
Package Type
IRFML8244TRPbF
Micro3 (SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Note
Qualification information†
Qualification level
Moisture Sensitivity Level
Cons umer††
(per JE DE C JE S D47F
Micro3 (SOT-23)
RoHS compliant
†††
guidelines )
MS L1
(per IP C/JE DE C J-S TD-020D††† )
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400μs; duty cycle 2%.
Surface mounted on 1 in square Cu board.
Refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2012
10
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