isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUZ90A DESCRIPTION ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application APPLICATIONS ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 4 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ ID Ptot Tj Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro MAX UNIT 1.67 ℃/W 75 ℃/W 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ90A ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 600 VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 2.8A IGSS Gate Source Leakage Current IDSS VSD MAX UNIT V 4 V 2 Ω VGS= 20V;VDS= 0 100 nA Zero Gate Voltage Drain Current VDS= 600VGS= 0 1 uA Diode Forward Voltage IF= 8A;VGS= 0 1.2 V isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn