GC4210 – GC4275 ® TM CONTROL DEVICES – HIGH SPEED PIN DIODES RoHS Compliant KEY FEATURES The GC4200 series are high speed (cathode base) PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. Available as packaged devices or These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. The GC4200 series will operate with as little as +10 mA forward bias. High Speed as chips for hybrid applications Low Loss Suitable for application to 18Ghz Low Insertion Loss High Isolation RoHS Compliant This series of diodes meets RoHS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. 1 1 www.MICROSEMI.com DESCRIPTION Most of our devices are supplied with Gold plated terminations. Other terminal finishes are available on request. Consult APPLICATIONS 2B factory for details. The GC4200 series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending over the frequency range from UHF through Ku band. Switch applications include high speed switches (ECM systems), TR switches, channel or antenna selection switches (telecommunications), duplexers (radar) and digital phase shifters (phased arrays). APPLICATIONS/BENEFITS RF / Microwave Switching Duplexers The GC4200 series are also used as passive and active limiters for low to moderate RF power levels. Digital Phase Shifting Phase Array Radar Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenuators. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) 3B Rating Value Unit IR 0.5 uA Storage Temperature TSTG -65 to +200 ºC Operating Temperature TOP -55 to +150 ºC Maximum Leakage Current @80% of Minimum Rated VB GC4210-GC4275 Symbol IMPORTANT: For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com HU UH Specifications are subject to change, consult factory for the latest information. These devices are ESD sensitive and must be handled use using ESD precautions. Copyright 2006 Rev.: 2009-02-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GC4210 – GC4275 ® TM CONTROL DEVICES – HIGH SPEED PIN DIODES RoHS Compliant DEVICE ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)E . IR=6mA/IF=10mA Thermal Resistance θ (˚C/W) (Max) (Typ) (Max) 0.06 1.5 100 80 70 0.10 1.0 100 70 GC4272 70 0.20 0.8 100 70 GC4273 70 0.30 0.7 100 60 Cj (pF) 2 Rs(Ω) 3 (Min) (Max) GC4270 70 GC4271 IR=10μA @VR=10V GC4274 70 0.40 0.6 100 50 GC4275 70 0.50 0.5 100 40 GC4210 100 0.06 1.5 200 80 GC4211 100 0.10 1.0 200 70 GC4212 100 0.20 0.75 200 70 GC4213 100 0.30 0.6 200 60 GC4214 100 0.40 0.5 200 50 GC4215 100 0.50 0.35 200 40 GC4220 250 0.06 2.5 500 80 GC4221 250 0.10 2.0 500 70 GC4222 250 0.20 1.5 500 70 GC4223 250 0.30 1.0 500 60 GC4224 250 0.40 0.8 500 50 GC4225 250 0.50 0.6 500 40 www.MICROSEMI.com @20 mA TL(nS) Vb(V) Model Number 1 Notes: 1. This series of devices is available in standard case styles 00, 30, and 35. Many other styles are available on request. 2. Capacitance is measured at 1 MHz. 3. Resistance is measured AT 1 GHz using transmission loss techniques. The junction capacitance specified is for a 00 (chip) package style. Standard wafer evaluation and characterization is completed using a style 30 package. Diodes are available in many case styles. Each type offers performance trade-offs. The proper choice of package style depends on the end application and operating environment. Consult factory for assistance. Reverse polarity diodes (NIP) and higher voltage PIN and NIP diodes are also available. (See data sheets for GC4300, GC4400, and GC4500 series respectively.) ELECTRICALS Copyright 2006 Rev.: 2009-02-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 GC4210 – GC4275 ® TM CONTROL DEVICES – HIGH SPEED PIN DIODES RoHS Compliant RS VS IF CURVES www.MICROSEMI.com Typical RS Vs IF Curves 1000 GC4220 Series GC4210 Series RS(Ω) 100 10 GC4270 Series 1 0.1 0.001 0.01 0.1 1 10 100 IF(mA) GRAPHS Copyright 2006 Rev.: 2009-02-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 GC4210 – GC4275 ® TM CONTROL DEVICES – HIGH SPEED PIN DIODES RoHS Compliant PACKAGE STYLE 00 PACKAGE STYLE 30 www.MICROSEMI.com Dimensions vary by model. Consult factory for details. PACKAGE STYLE 35 PACKAGE STYLE 115 MECHANICAL 50 OHM BOLT CHANNEL MODULE OTHER PACKAGE STYLES AVAILABLE ON REQUEST CONSULT FACTORY Copyright 2006 Rev.: 2009-02-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 4