FAST RECOVERY DIODE AFF230K INSULATED MODULE Repetitive voltage up to *Full ermetic packaging *Industrial compatible packaging *Insulation using Aln substrate *6KVrms insulation voltage available on request *Contact screws avaliable on request Mean on-state current 2600 V 208 A Surge current 5 kA FINAL SPECIFICATION apr 17 - ISSUE : 2 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 150 2600 V V RSM Non-repetitive peak reverse voltage 150 2700 V I RRM Repetitive peak reverse current 150 50 mA CONDUCTING I F (AV) Mean on-state current 180° sin, 50Hz, Tc=55°C I F (AV) Mean on-state current 180° sin. 50Hz, Tc=70°C I FSM Surge on-state current sine wave, 10 ms I² t I² t without reverse voltage V F On-state voltage On-state current = V F(TO) Threshold voltage F On-state slope resistance r Q rr Reverse recovery charge I rr Peak reverse recovery current t rr Reverse recovery time IF= di/dt= VR = 208,3 150 600 A A 288,6 A 5,0 kA 125 x1E3 A²s 150 2,05 V 150 1,15 V 150 1,500 mohm 200 A 150 185 µC 100 A/µs 50 V 150 140 A 150 1,3 µs 125 °C/kW MOUNTING R th(j-c) Thermal impedance Junction to case, per element R th(c-h) Thermal impedance Case to heatsink, per element T j Operating junction temperature V ins RMS insulation voltage 50Hz, circuit to base,all terminal shorted Mounting tourque Case to heatsink Busbars to terminals T Mass ORDERING INFORMATION : AFF230K S 26 standard specification VRRM/100 25 20 °C/kW -30 / 150 °C 4500 V 4 to 6 12 to 18 1500 Nm Nm g (*) 6000V available on request. Add HVI to the desired code in phase of order, i.e. AFF230HVIS26 Thermal impedance FAST DIODE MODULE FINAL SPECIFICATION apr 17 - ISSUE : 2 SWITCHING CHARACTERISTICS FORWARD RECOVERY VOLTAGE 40 Tj =125 °C 35 30 20 IF Tj=25°C VFR 15 10 VF 5 0 0 200 400 600 800 1000 1200 di/dt [A/µs] REVERSE RECOVERY CHARGE Tj = 150 °C REVERSE RECOVERY CURRENT Tj = 150 °C 350 400 500 A 350 500 A 300 300 200 A 200 A 250 Irr [A] 250 Qrr [µC] VFR [V] 25 200 200 150 150 100 100 50 50 0 0 50 100 150 200 di/dt [A/µs] 250 0 0 50 100 150 200 250 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta IF d i/d t ta tb Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr Vr AFF230K FAST RECOVERY DIODE FINAL SPECIFICATION apr 17 - ISSUE : 2 SURGE CHARACTERISTIC Tj = 150 °C 700 6 600 5 500 4 ITSM [kA] On-state Current [A] ON-STATE CHARACTERISTIC Tj = 150 °C 400 300 3 2 200 1 100 0 0 1 1,5 2 2,5 1 On-state Voltage [V] 10 n° cycles TRANSIENT THERMAL IMPEDANCE 140,0 Zth j-c [°C/kW] 120,0 100,0 80,0 60,0 40,0 20,0 0,0 0,001 0,1 10 t[s] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. Distributed by 100