BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L (3) (2) (1) Q1 Q2 (4) (5) (6) DEVICE MARKING 6 5 MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit Collector −Emitter Voltage VCEO −65 −45 −30 V Collector −Base Voltage VCBO −80 −50 −30 V Emitter −Base Voltage VEBO −5.0 −5.0 −5.0 V IC −100 −100 −100 mAdc Collector Current − Continuous 1 2 Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Symbol Max Unit PD 380 250 mW 3.0 mW/°C 3xm See Table 3 SOT−363/SC−88 CASE 419B Style 1 3x = Specific Device Code x = B, F, G, K, L M = Date Code THERMAL CHARACTERISTICS Characteristic 4 ORDERING INFORMATION Thermal Resistance, Junction to Ambient RJA 328 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 x 0.75 x 0.062 in Package Shipping† BC856BDW1T1 SOT−363 3000 Units/Reel BC857BDW1T1 SOT−363 3000 Units/Reel BC857CDW1T1 SOT−363 3000 Units/Reel BC858BDW1T1 SOT−363 3000 Units/Reel BC858CDW1T1 SOT−363 3000 Units/Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 3 1 Publication Order Number: BC856BDW1T1/D BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −65 −45 −30 − − − − − − −80 −50 −30 − − − − − − −80 −50 −30 − − − − − − −5.0 −5.0 −5.0 − − − − − − − − − − −15 −4.0 BC856B, BC857B, BC858B BC857C, BC858C − − 150 270 − − BC856B, BC857B, BC858B BC857C, BC858C 220 420 290 520 475 800 − − − − −0.3 −0.65 − − −0.7 −0.9 − − −0.6 − − − −0.75 −0.82 fT 100 − − MHz Output Capacitance (VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) Collector −Emitter Breakdown Voltage (IC = −10 A, VEB = 0) Collector −Base Breakdown Voltage (IC = −10 A) Emitter −Base Breakdown Voltage (IE = −1.0 A) V(BR)CEO BC856 Series BC857 Series BC858 Series V V(BR)CES BC856 Series BC857B Only BC858 Series V V(BR)CBO BC856 Series BC857 Series BC858 Series V V(BR)EBO BC856 Series BC857 Series BC858 Series Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = −10 A, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) hFE Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VBE(sat) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) VBE(on) − V V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) http://onsemi.com 2 BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series TYPICAL CHARACTERISTICS − BC856 TJ = 25°C VCE = −5.0 V TA = 25°C −0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) −1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 −0.6 VBE @ VCE = −5.0 V −0.4 −0.2 0.2 VCE(sat) @ IC/IB = 10 0 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −0.1 −0.2 −0.5 −50 −100 −200 −5.0 −10 −20 −1.0 −2.0 IC, COLLECTOR CURRENT (mA) Figure 2. “On” Voltage −2.0 −1.6 −1.2 IC = −10 mA −20 mA −50 mA −100 mA −200 mA −0.8 −0.4 TJ = 25°C 0 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 IB, BASE CURRENT (mA) −5.0 −10 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain −20 −1.0 −1.4 −1.8 −2.6 −3.0 −0.2 f, T CURRENT−GAIN − BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25°C Cib 10 8.0 Cob 4.0 2.0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) −0.5 −1.0 −50 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) −100 −200 Figure 4. Base−Emitter Temperature Coefficient 40 6.0 −55°C to 125°C −2.2 Figure 3. Collector Saturation Region 20 VB for VBE 500 VCE = −5.0 V 200 100 50 20 −100 −1.0 −10 IC, COLLECTOR CURRENT (mA) −50 −100 Figure 5. Capacitance Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3 BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series TYPICAL CHARACTERISTICS − BC857/BC858 −1.0 1.5 TA = 25°C −0.9 VCE = −10 V TA = 25°C VBE(sat) @ IC/IB = 10 −0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 −0.7 VBE(on) @ VCE = −10 V −0.6 −0.5 −0.4 −0.3 −0.2 0.3 VCE(sat) @ IC/IB = 10 −0.1 0.2 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 IC, COLLECTOR CURRENT (mAdc) 0 −0.1 −0.2 −100 −200 1.0 −2.0 TA = 25°C −1.6 −1.2 −0.8 IC = −10 mA IC = −50 mA IC = −200 mA IC = −100 mA IC = −20 mA −0.4 0 −0.02 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 −10 −20 −0.1 −1.0 IB, BASE CURRENT (mA) −0.2 10 Cib 7.0 TA = 25°C 5.0 Cob 3.0 2.0 1.0 −0.4 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −10 −1.0 IC, COLLECTOR CURRENT (mA) −100 Figure 10. Base−Emitter Temperature Coefficient f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) Figure 9. Collector Saturation Region C, CAPACITANCE (pF) −100 −50 Figure 8. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 7. Normalized DC Current Gain −0.5 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mAdc) −20 −30 −40 400 300 200 150 VCE = −10 V TA = 25°C 100 80 60 40 30 20 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 11. Capacitances Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4 BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ZJA(t) = r(t) RJA RJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 10 1.0 100 1.0k 10k 100k 1.0M t, TIME (ms) Figure 13. Thermal Response The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. −200 IC, COLLECTOR CURRENT (mA) 1s 3 ms −100 −50 −10 −5.0 −2.0 −1.0 TA = 25°C TJ = 25°C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −5.0 −10 −30 −45 −65 −100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area http://onsemi.com 5 BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series PACKAGE DIMENSIONS SC−88 (SOT−363) CASE 419B−02 ISSUE T A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. G 6 5 4 1 2 3 DIM A B C D G H J K N S −B− S D 6 PL 0.2 (0.008) M B INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 M N J C H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches SC−88/SC70−6 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. BC856BDW1T1/D