NL37WZ16 Triple Buffer The NL37WZ16 is a high performance buffer with inputs operating from a 1.65 to 5.5 V supply. The NL37WZ16 can be used as a line receiver which will receive slow input signals. Features http://onsemi.com • Designed for 1.65 V to 5.5 V VCC Operation • Over Voltage Tolerant Inputs and Outputs • LVTTL Compatible − Interface Capability with 5 V TTL Logic MARKING DIAGRAM with VCC = 3 V • LVCMOS Compatible • 24 mA Balanced Output Sink and Source Capability • Near Zero Static Supply Current Substantially Reduces System Power Requirements 8 LR M G G US8 US SUFFIX CASE 493 1 • Current Drive Capability is 24 mA at the Outputs • Chip Complexity: FET = 94 • These Devices are Pb−Free and are RoHS Compliant LR M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) IN A1 1 8 VCC OUT Y3 2 7 OUT Y1 IN A2 3 6 4 GND *Date Code orientation may vary depending upon manufacturing location. PIN ASSIGNMENT Pin Function 1 IN A1 2 OUT Y3 3 IN A2 IN A3 5 OUT Y2 Figure 1. Pinout (Top View) IN A1 1 OUT Y1 IN A2 1 OUT Y2 IN A3 1 4 GND 5 OUT Y2 6 IN A3 7 OUT Y1 8 VCC FUNCTION TABLE A Input OUT Y3 Y Output L L H H ORDERING INFORMATION Figure 2. Logic Symbol Device Package Shipping† NL37WZ16USG US8 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 April, 2012 − Rev. 7 1 Publication Order Number: NL37WZ16/D NL37WZ16 MAXIMUM RATINGS Symbol VCC Parameter DC Supply Voltage Value Units −0.5 to +7.0 V V VI DC Input Voltage −0.5 ≤ VI ≤ +7.0 VO DC Output Voltage Output in Z or LOW State (Note 1) −0.5 ≤ VO ≤ +7.0 IIK DC Input Diode Current VI < GND −50 IOK DC Output Diode Current VO < GND −50 IO DC Output Sink Current ±50 mA ICC DC Supply Current per Supply Pin ±100 mA IGND DC Ground Current per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 _C V mA mA TL Lead Temperature, 1 mm from Case for 10 Seconds 260 _C TJ Junction Temperature under Bias +150 _C qJA Thermal Resistance (Note 2) 333 _C/W PD Power Dissipation in Still Air at 85_C 200 mW MSL FR VESD Moisture Sensitivity Level 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in ESD Withstand Voltage Human Body Model (Note 3) Machine Model (Note 4) Charged Device Model (Note 5) V > 2000 > 200 N/A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. IO absolute maximum rating must be observed. 2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 3. Tested to EIA/JESD22−A114−A. 4. Tested to EIA/JESD22−A115−A. 5. Tested to JESD22−C101−A. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max VCC Supply Voltage Operating Data Retention Only 1.65 1.5 5.5 5.5 Units V VI Input Voltage (Note 6) 0 5.5 V VO Output Voltage (HIGH or LOW State) 0 5.5 V TA Operating Free−Air Temperature −40 +85 _C Dt/DV Input Transition Rise or Fall Rate VCC = 2.5 V ±0.2 V VCC = 3.0 V ±0.3 V VCC = 5.0 V ±0.5 V 0 0 0 20 10 5 6. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level. http://onsemi.com 2 ns/V NL37WZ16 DC ELECTRICAL CHARACTERISTICS VCC Symbol (V) Min VIH High−Level Input Voltage 1.65 to 1.95 2.3 to 5.5 0.75 VCC 0.7 VCC VIL Low−Level Input Voltage 1.65 to 1.95 2.3 to 5.5 VOH High−Level Output Voltage VIN = VIH or VIL VOL IIN Parameter Condition TA = 25°C Low−Level Output Voltage VIN = VIH or VIL −40°C 3 TA 3 85°C Typ Max Min Max 0.75 VCC 0.7 VCC 0.25 VCC 0.3 VCC Units V 0.25 VCC 0.3 VCC V 1.65 to 5.5 VCC − 0.1 VCC VCC − 0.1 IOH = −4 mA 1.65 1.4 1.50 1.55 IOH = −8 mA 2.3 1.9 2.1 1.9 IOH = −12 mA 2.7 2.2 2.4 2.2 IOH = −16 mA 3.0 2.4 2.7 2.4 IOH = −24 mA 3.0 2.3 2.5 2.3 IOH = −32 mA 4.5 3.8 4.0 IOL = 100 mA 1.65 to 5.5 0.1 0.1 IOL = 4 mA 1.65 0.24 0.24 IOL = 8 mA 2.3 0.20 0.3 0.3 IOL = 12 mA 2.7 0.22 0.4 0.4 IOL = 16 mA 3.0 0.28 0.4 0.4 IOL = 24 mA 3.0 0.38 0.55 0.55 IOL = 32 mA 4.5 0.42 0.55 0.55 0 to 5.5 ±0.1 ±1.0 mA 0 1 10 mA 5.5 1 10 mA IOH = −100 mA Input Leakage Current VIN = 5.5 V or GND IOFF Power Off Leakage Current VIN = 5.5 V or VOUT = 5.5 V ICC Quiescent Supply Current VIN = 5.5 V or GND V 3.8 V ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎ Î ÎÎ Î ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W TA = 25°C Symbol tPLH tPHL Parameter Propagation Delay (Figure 3 and 4) −40°C 3 TA 3 85°C VCC (V) Min Typ Max Min Max Units RL = 1 MW, CL = 15 pF 1.8 ± 0.15 1.8 6.0 7.9 1.8 8.8 ns RL = 1 MW, CL = 15 pF 2.5 ± 0.2 1.0 3.0 5.2 1.0 5.8 RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF 3.3 ± 0.3 0.8 1.2 2.3 3.0 3.6 4.6 0.8 1.2 4.0 5.1 RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF 5.0 ± 0.5 0.5 0.8 1.8 2.4 2.9 3.8 0.5 0.8 3.2 4.2 Condition CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Units CIN Input Capacitance VCC = 5.5 V, VI = 0 V or VCC 7.0 pF CPD Power Dissipation Capacitance (Note 7) 10 MHz, VCC = 3.3 V, VI = 0 V or VCC 10 MHz, VCC = 5.5 V, VI = 0 V or VCC 9 11 pF 7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin ) ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin ) ICC VCC. http://onsemi.com 3 NL37WZ16 A GND tPLH Y VCC VCC 50% tPHL PULSE GENERATOR DUT RT 50% VCC PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns RT = ZOUT of pulse generator (typically 50 W) Figure 3. Switching Waveforms Figure 4. Test Circuit http://onsemi.com 4 CL RL NL37WZ16 PACKAGE DIMENSIONS US8 CASE 493−02 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION “A” DOES NOT INCLUDE MOLD FLASH, PROTRUSION OR GATE BURR. MOLD FLASH. PROTRUSION AND GATE BURR SHALL NOT EXCEED 0.140 MM (0.0055”) PER SIDE. 4. DIMENSION “B” DOES NOT INCLUDE INTER−LEAD FLASH OR PROTRUSION. INTER−LEAD FLASH AND PROTRUSION SHALL NOT E3XCEED 0.140 (0.0055”) PER SIDE. 5. LEAD FINISH IS SOLDER PLATING WITH THICKNESS OF 0.0076−0.0203 MM. (300−800 “). 6. ALL TOLERANCE UNLESS OTHERWISE SPECIFIED ±0.0508 (0.0002 “). −X− A 8 J −Y− 5 DETAIL E B L 1 4 R S G P U C −T− SEATING PLANE H 0.10 (0.004) T K D N 0.10 (0.004) M R 0.10 TYP T X Y V M F DETAIL E MILLIMETERS MIN MAX 1.90 2.10 2.20 2.40 0.60 0.90 0.17 0.25 0.20 0.35 0.50 BSC 0.40 REF 0.10 0.18 0.00 0.10 3.00 3.20 0_ 6_ 5_ 10 _ 0.23 0.34 0.23 0.33 0.37 0.47 0.60 0.80 0.12 BSC DIM A B C D F G H J K L M N P R S U V INCHES MIN MAX 0.075 0.083 0.087 0.094 0.024 0.035 0.007 0.010 0.008 0.014 0.020 BSC 0.016 REF 0.004 0.007 0.000 0.004 0.118 0.126 0_ 6_ 5_ 10 _ 0.010 0.013 0.009 0.013 0.015 0.019 0.024 0.031 0.005 BSC SOLDERING FOOTPRINT* 3.8 0.15 0.50 0.0197 1.8 0.07 0.30 0.012 1.0 0.0394 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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