EIB1213-2P 12.75-13.25GHz 2W Internally Matched Power FET UPDATED 06/14/06 FEATURES • • • • • • • 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at PO = 22.0 dBm SCL Non-Hermetic Metal Flange Package EIB1213-2P ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Caution! ESD sensitive device. Output Power at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 800mA Gain at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 800mA Gain Flatness f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 800mA Power Added Efficiency at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 800mA MIN TYP MAX 32.0 33.0 dBm 7.50 8.50 dB ±0.6 f = 12.75-13.25GHz % Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 22.0 dBm S.C.L2 VDS = 8 V, IDSQ ≈ 65% IDSS f = 13.25GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 1360 1700 VP Pinch-off Voltage 850 VDS = 3 V, IDS = 12 mA -2.5 -3.5 -43 3 Thermal Resistance 960 -46 2) S.C.L. = Single Carrier Level. mA dBc 8.0 Note: 1) Tested with 100 Ohm gate resistor. dB 25 Id1dB RTH UNITS 9.0 mA V o C/W 3) Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 10V 8V Gate-Source Voltage -5 -4V Forward Gate Current 21.6mA 7.2mA PARAMETERS Reverse Gate Current -3.6mA -1.2mA Input Power 32.0dBm @ 3dB Compression Channel Temperature 175 oC 175 oC Storage Temperature -65 to +175 oC -65 to +175 oC Total Power Dissipation 16W 16W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised June 2006