UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003KL-x-x-T60-K MJE13003KG-x-x-T60-K MJE13003KL-x-x-T6C-A-K MJE13003KG-x-x-T6C-A-K MJE13003KL-x-x-T6C-F-K MJE13003KG-x-x-T6C-F-K MJE13003KL-x-x-T92-B MJE13003KG-x-x-T92-B MJE13003KL-x-x-T92-K MJE13003KG-x-x-T92-K MJE13003KL-x-x-T92-R MJE13003KG-x-x-T92-R MJE13003KL-x-x-T9L-B MJE13003KG-x-x-T9L-B MJE13003KL-x-x-T9L-K MJE13003KG-x-x-T9L-K MJE13003KL-x-x-T9L-R MJE13003KG-x-x-T9L-R MJE13003KL-x-x-TM3-T MJE13003KG-x-x-TM3-T MJE13003KL-x-x-TN3-R MJE13003KG-x-x-TN3-R MJE13003KL-x-x-TN3-T MJE13003KG-x-x-TN3-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-126 TO-126C TO-126C TO-92 TO-92 TO-92 TO-92L TO-92L TO-92L TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E E C B B C E E C B E C B E C B E C B E C B E C B B C E B C E B C E Packing Bulk Bulk Bulk Tape Box Bulk Tape Reel Tape Box Bulk Tape Reel Tube Tape Reel Tube 1 of 8 QW-R223-006.A MJE13003K NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter Base Voltage RATINGS UNIT 400 V 700 V 9 V Continuous 1.5 Collector Current A Peak (1) 3 Continuous 0.75 Base Current A Peak (1) 1.5 Continuous 2.25 Emitter Current A Peak (1) 4.5 TO-126/ TO-126C 1.4 W Total Power Dissipation (Ta=25°C) PD TO-92/ TO-92L 1.1 W Total Power Dissipation (TC=25°C) TO-252/ TO-251 25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL VCEO(SUS) VCBO VEBO IC ICM IB IBM IE IEM 2 of 8 QW-R223-006,A MJE13003K NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS (Note) Collector-Emitter Sustaining Voltage Collector Cutoff Current SYMBOL TC=25°C TC=100°C Emitter Cutoff Current SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with base reverse biased ON CHARACTERISTICS (Note) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ICEO IEBO IC=10 mA , IB=0 VCEO=Rated Value, VBE(OFF)=1.5 V VEB=9 V, IC=0 MIN TYP MAX UNIT 400 V 1 5 1 Is/b See Figure 5 RBSOA See Figure 6 IC=0.5A, VCE=5V IC=1A, VCE=2V IC=0.5A, IB=0.1A IC=1A, IB=0.25A VCE(SAT) IC=1.5A, IB=0.5A IC=1A, IB=0.25A, TC=100°C IC=0.5A, IB=0.1A VBE(SAT) IC=1A, IB=0.25A IC=1A, IB=0.25A, TC=100°C DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time Inductive Load, Clamped (Table 1) Storage Time Crossover Time Fall Time Note: Pulse Test : PW=300μs, Duty Cycle≤2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS hFE1 hFE2 fT Cob IC=100mA, VCE=10V, f=1MHz VCB=10V, IE=0, f=0.1MHz 8 5 4 mA mA 51 30 0.5 1 3 1 1 1.2 1.1 10 21 V V MHz pF tD tR tS tF VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25μs, Duty Cycle≤1% 0.05 0.1 0.5 1 2 4 0.4 0.7 μs μs μs μs tSTG tC tF IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C 1.7 4 0.29 0.75 0.15 μs μs μs 3 of 8 QW-R223-006,A MJE13003K CLASSIFICATION OF hFE1 RANK RANGE A 8 ~ 16 B 15 ~ 21 C 20 ~ 26 D 25 ~ 31 E 30 ~ 36 F 35 ~ 40 G 40 ~ 46 H 45 ~ 51 Table 1.Test Conditions for Dynamic Performance Resistive Switching Reverse Bias Safe Operating Area and Inductive Switching +5V Vcc 33 1N4933 MJE210 L Test Circuits 0.001μF Circuit Values MR826* +125V 33 1N4933 5V Pw 2N2222 1k 1k DUTY CYCLE≦10% tR, tF≦10ns 68 5.1k IB 1k 1N4933 Vclamp Ic RB +5V Rc *SELECTED FOR≣1kV TUT 51 T.U.T. D1 100 1/2W Coil Data : VCC=20V Ferroxcube core #6656 Vclamp=300V Full Bobbin ( ~ 200 Turns) #20 -4.0V MJE200 47 SCOPE RB VCE 2N2905 270 0.02μF NOTE PW and Vcc Adjusted for Desired Ic RB Adjusted for Desired IB1 -VBE(OFF) GAP for 30 mH/2 A VCC=125V RC=125Ω D1=1N5820 or Equiv. RC=47Ω Lcoil=50mH Output Waveforms Test Waveforms NPN SILICON TRANSISTOR Ic t1 Adjusted to Obtain Ic t t1 VCE tf t t2 Figure 1. Inductive Switching Measurements ICPK Vclamp 90% Ic 90% Vclamp tRV tsv tFI tTI 25μS 0 Test Equipment Scope-Tektronics 475 or Equivalent Lcoil(Icpk) t1≒ Vcc VCE or Vclamp TIME IC +10.3 V tf CLAMPED Ic(pk) Lcoil(Icpk) t2≒ Vclamp -8.5V tr, tf<10ns Duty Cycly=1.0% RB and Rc adjusted for desired IB and Ic Table 2. Typical Inductive Switching Performance Ic AMP Tc °C tsv µs tRV µs tFI µs tTI µs tc µs 0.5 25 100 1.3 1.6 0.23 0.26 0.30 0.30 0.35 0.40 0.30 0.36 1 25 100 1.5 1.7 0.10 0.13 0.14 0.26 0.05 0.06 0.16 0.29 1.5 25 100 1.8 3 0.07 0.08 0.10 0.22 0.05 0.08 0.16 0.28 tc VCE IB 90% IB1 10% Vclamp 10% Icpk 2% Ic Time UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1 4 of 8 QW-R223-006,A MJE13003K NPN SILICON TRANSISTOR SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads, which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tSV = Voltage Storage Time, 90% IB1 to 10% Vclamp tRV = Voltage Rise Time, 10 ~ 90% Vclamp tFI= Current Fall Time, 90 ~ 10% IC tTI = Current Tail, 10 ~ 2% IC tC = Crossover Time, 10% Vclamp to 10% IC For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222: PSWT = 1/2 VCCIC (tC) f In general, tRV + tFI ≈ tC. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tC and tSV) which are guaranteed at 100°C. RESISTIVE SWITCHING PERFORMANCE UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R223-006,A MJE13003K NPN SILICON TRANSISTOR SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC≥25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5. TJ(PK) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 6 gives PBSOA characteristics. The Safe Operating Area of Figures 5 and 6 are specified ratings (for these devices under the test conditions shown.) Figure 5. Active Region Safe Operating Area Figure 6. Reverse Bias Safe Operating Area 10 1.6 10μs 2 Collector Current, IC (A) Collector Current, IC (A) 5 100μs 1 5.0 ms dc 0.5 1.0 ms Tc=25℃ 0.2 Thermal Limit(Single Pule) Bonding Wire Limit Second Breakdown Limit Curves Apply Below Rated 0.1 0.05 VCEO 1.2 VBE(OFF)=9V TJ≦100℃ IB1=1A 0.8 0.4 5V 0.02 3V 1.5V 0.01 5 10 20 50 100 200 300 500 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 0 100 200 300 400 500 600 700 800 Collector-Emitter Clamp Voltage,VCE (V) 6 of 8 QW-R223-006,A MJE13003K TYPICAL CHARACTERISTICS DC Current Gain Collector Saturation Region 2 DC Current Gain, hFE 60 Collector-Emitter Voltage, VCE(V) 80 TJ=150℃ 40 25℃ 30 20 -55℃ 1 0 8 VCE=2V - - - - - -VCE=5V 6 4 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 TJ=25℃ 1.6 Ic=0.1A 0.3A 0.5A 1.2 0.4 0 0.002 Base-Emitter Voltage 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 Collector-Emitter Saturation Region 0.35 VBE(SAT) @ IC/IB=3 - - - - - -VBE(ON) @ VCE=2V 1.2 0.3 0.25 1 Voltage, V(V) Voltage, V(V) 1.5A Base Current, IB (A) 1.4 TJ=-55℃ 25℃ 0.8 25℃ 0.6 0.4 1A 0.8 Collector Current,IC (A) 0.05 0.07 0.1 0.2 0.3 TJ=-55℃ 0.2 25℃ 0.15 0.1 150℃ 150℃ 0.02 0.03 Ic/IB=3 0.05 0.5 0.7 1 0 0.02 0.03 2 0.05 0.07 0.1 Collector Current,IC (A) Collector cut-off Region 4 Capacitance, C (pF) TJ=150℃ 125℃ 100℃ 1 0 1 2 TJ=25℃ 300 10 10 0.5 0.7 Capacitance VCE=250V 10 0.3 500 3 2 0.2 Collector Current, IC (A) 10 Collector Current, IC (μA) NPN SILICON TRANSISTOR 75℃ 50℃ Cib 200 100 70 50 30 20 10 -1 10 -0.4 7 5 FORWARD REVERSE -0.2 Cob 10 25℃ 0 +0.2 +0.4 +0.6 Base-Emitter Voltage, VBE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 Reverse Voltage, VR (V) 7 of 8 QW-R223-006,A MJE13003K TYPICAL CHARACTERISTICS(Cont.) 100 80 P% NPN SILICON TRANSISTOR 60 40 20 0 25 50 75 100 125 150 Ta (°C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R223-006,A