MURF1005CT THRU MURF1060CT SUPER FAST RECOVERY SILICON RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 10.0 Ampere FEATURES ITO-220AB The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Super fast switching for high efficiency ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250 C/10 seconds,0.25 ”(6.35mm) from case ● .406(10.3) .386(9.8) ● Case: JEDEC ITO-220AB molded plastic body ● Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 ● High temperature soldering guaranteed: .059(1.5) .043(1.1) .030(0.76) .020(0.51) .112(2.84) .088(2.24) 250 C/10 seconds, 0.25" (6.35mm) from case Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 ounce, 2.24 grams o .189(4.8) .173(4.4) .118(3.0) .106(2.7) .610(15.5) .571(14.5) .157(4.0) .142(3.6) MECHANICAL DATA ● ● ● ● .138(3.5) .122(3.1) .118(3.0) .102(2.6) .071(1.8) .055(1.4) .571(14.5) .531(13.5) .114(2.9) .098(2.5) .030(0.76) .020(0.51) Dimensions in inches and (millimeters) PIN 1 - + PIN 3 - PIN 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage MURF MURF MURF MURF 1005CT 1010CT 1015CT 1020CT MURF 1030CT MURF MURF 1040CT 1060CT Unit VRRM VRWM VR 50 100 150 200 300 400 600 V VR(RMS) 35 70 105 140 210 280 420 V Average Rectified Output Current @TC = 100°C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage VFM @IF = 5.0A Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C 0.95 1.3 1.7 10 400 IRM V µA Reverse Recovery Time (Note 1) trr 35 50 nS Typical Junction Capacitance (Note 2) Cj 80 50 pF Operating and Storage Temperature Range Tj, TSTG Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. -65 to +150 °C MURF1005CT THRU MURF1060CT RATINGS AND CHARACTERISTIC CURVES 50 12 50V-200V 10 10 8 6 1 300V-400V 600V 4 .1 2 0 0 50 100 150 .01 0.4 100 0.6 1.0 0.8 1.2 1.4 1.6 1.8 400 TJ = 25 F=1.0MHZ Vsig=50mVp-p 80 100 60 40 20 0 50V-400V 600V 1 10 50 10 0.1 100 10 1 1000 TJ =125 100 10 1 TJ =25 .1 40 20 0 60 100 80 FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (+) 50Vdc (approx) (-) (-) DUT PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms 0 -0.25A (+) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm 100