PD - 94164A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.025Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 18* 18* 72 75 0.6 ±16 230 18 7.5 2.7 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 08/07/01 IRL5Y7413CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units Test Conditions 30 — — V VGS = 0V, ID = 250µA — 0.03 — V/°C Reference to 25°C, ID = 1.0mA — — 1.0 30 — — — — — — — — 0.025 0.030 — — 25 250 Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 100 -100 79 9.0 23 20 130 52 46 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1670 660 80 — — — VGS = 10V, ID = 18A ➃ VGS = 4.5V, ID = 18A VDS = VGS, ID = 250µA VDS = 10V, IDS = 18A ➃ VDS = 30V ,VGS=0V VDS = 24V, VGS = 0V, TJ =125°C VGS = 16V VGS = -16V VGS =10V, ID = 18A VDS = 24V V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC VDD = 15V, ID = 18A, VGS =10V, RG = 6.2Ω ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 18* 72 1.5 110 300 Test Conditions A V ns nC Tj = 25°C, IS = 18A, VGS = 0V ➃ Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs VDD ≤25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.67 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRL5Y7413CM 100 VGS TOP 15V 10V 7.0V 4.5V 3.5V 3.3V 3.0V BOTTOM 2.7V 10 1 2.7V 20µs PULSE WIDTH Tj = 25°C VGS 15V 10V 7.0V 4.5V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 10 2.7V 20µs PULSE WIDTH Tj = 150°C 0.1 1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 10 15 V DS = 15V 20µs PULSE WIDTH 4.0 4.5 5.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 3.5 100 Fig 2. Typical Output Characteristics 100 3.0 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 1 2.5 1 ID = 18A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRL5Y7413CM VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 2000 Ciss 1500 C oss 1000 500 Crss 0 1 10 ID = 18A 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 10 20 30 40 50 60 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 100 TJ = 150 ° C OPERATION IN THIS AREA LIMITED BY R DS (on) 100 10 TJ = 25 ° C 1 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 24V VDS = 15V VDS = 6V 16 VDS , Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) C, Capacitance (pF) 2500 20 VGS , Gate-to-Source Voltage (V) 3000 2.0 10 1ms Tc = 25°C Tj = 150°C Single Pulse 10ms 1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRL5Y7413CM 50 RD VDS LIMITED BY PACKAGE VGS I D , Drain Current (A) 40 D.U.T. RG + -VDD 30 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL5Y7413CM 15V L VDS D .U .T. RG IA S VGS 20V D R IV E R + - VD D 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 600 ID 8.0A 11.4A BOTTOM 18A TOP 500 400 300 200 100 0 25 V (B R )D S S 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 10 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRL5Y7413CM Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 18A, di/dt ≤ 140 A/µs, maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 1.4mH Peak IAS = 18A, VGS =10V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 30V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/01 www.irf.com 7