IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive • Inverters • UPS G Gate E IRGS4620DPbF D2Pak IRGP4620DPbF TO-247AC IRGB4620DPbF TO-220AC C Collector Features E C G E C G E C G IRGP4620D-EPbF TO-247AD E Emitter Benefits Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coefficient and tight distribution Excellent current sharing in parallel operation of parameters 5µs Short Circuit SOA Enables short circuit protection scheme Lead-Free, RoHS Compliant Environmentally friendly Base part number Package Type IRGS4620DPBF D2Pak IRGB4620DPBF IRGP4620DPBF IRGP4620D-EPBF Absolute Maximum Ratings TO-220AB TO-247AC TO-247AD VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Standard Pack Form Quantity Tube 50 Tape and Reel Right 800 Tape and Reel Left 800 Tube 50 Tube 25 Tube 25 Orderable Part Number IRGS4620DPBF IRGS4620DTRRPBF IRGS4620DTRLPBF IRGB4620DPBF IRGP4620DPBF IRGP4620D-EPBF Parameter Max. Units Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate to Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. (1.6mm from case) Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247) 600 32 20 36 48 16 10 48 ±20 ±30 140 70 -40 to +175 V A V W 300 10 lbf·in (1.1 N·m) C Notes through are on page 7 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF Thermal Resistance RθJC (IGBT) RθJC (Diode) RθCS RθJA Parameter Thermal Resistance Junction-to-Case (D2Pak, TO-220) Thermal Resistance Junction-to-Case (TO-247) Thermal Resistance Junction-to-Case (D2Pak, TO-220) Thermal Resistance Junction-to-Case (TO-247) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak) Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220, TO-247) Min. ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 0.50 40 80 Max. 1.07 1.12 3.66 3.71 ––– ––– ––– Units °C/W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — V(BR)CES Temperature Coeff. of Breakdown Voltage — 0.40 ΔV(BR)CES/ΔTJ — 1.55 — 1.90 Collector-to-Emitter Saturation Voltage VCE(on) — 1.97 Gate Threshold Voltage 4.0 — VGE(th) Threshold Voltage Temp. Coefficient — -18 ΔVGE(th)/ΔTJ gfe Forward Transconductance — 7.7 — 2.0 ICES Collector-to-Emitter Leakage Current — 475 Gate-to-Emitter Leakage Current — — IGES — 2.1 VFM Diode Forward Voltage Drop — 1.6 Max. Units Conditions — V VGE = 0V, IC = 100µA — V/°C VGE = 0V, IC = 1mA (25°C-175°C) 1.85 IC = 12A, VGE = 15V, TJ = 25°C V — IC = 12A, VGE = 15V, TJ = 150°C — IC = 12A, VGE = 15V, TJ = 175°C 6.5 V VCE = VGE, IC = 350µA — mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C) — S VCE = 50V, IC = 12A, PW = 80µs — µA VGE = 0V, VCE = 600V — VGE = 0V, VCE = 600V, TJ = 175°C ±100 nA VGE = ±20V 3.1 V IF = 12A — IF = 12A, TJ = 175°C Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Total Gate Charge — 25 Qg Gate-to-Emitter Charge — 7.0 Qge Qgc Gate-to-Collector Charge — 11 Eon Turn-On Switching Loss — 75 Eoff Turn-Off Switching Loss — 225 Total Switching Loss — 300 Etotal td(on) Turn-On delay time — 31 tr Rise time — 17 Turn-Off delay time — 83 td(off) tf Fall time — 24 Turn-On Switching Loss — 185 Eon Eoff Turn-Off Switching Loss — 355 Etotal Total Switching Loss — 540 Turn-On delay time — 30 td(on) tr Rise time — 18 Turn-Off delay time — 102 td(off) tf Fall time — 41 Input Capacitance — 765 Cies Coes Output Capacitance — 52 Cres Reverse Transfer Capacitance — 23 Max — — — — — — — — — — — — — — — — — — — — Units nC µJ ns µJ ns pF FULL SQUARE RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 5.0 — — µs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 280 68 19 — — — µJ ns A 2 www.irf.com © 2013 International Rectifier Conditions IC = 12A VGE = 15V VCC = 400V IC = 12A, VCC = 400V, VGE=15V RG = 22Ω, L = 200µH, LS = 150nH, TJ = 25°C Energy losses include tail & diode reverse recovery IC = 12A, VCC = 400V, VGE=15V RG = 22Ω, L = 200µH, LS = 150nH, TJ = 175°C Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0MHz TJ = 175°C, IC = 48A VCC = 480V, Vp ≤ 600V RG = 22Ω, VGE = +20V to 0V VCC = 400V, Vp ≤ 600V RG = 22Ω, VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 12A, VGE = 15V, Rg = 22Ω, L = 200µH, LS = 150nH Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF 40 150 125 30 Ptot (W) IC (A) 100 20 75 50 10 25 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 T C (°C) T C (°C) Fig. 2 - Power Dissipation vs. Case Temperature Fig. 1 - Maximum DC Collector Current vs. Case Temperature 100 100 10µsec 100µsec 10 1 IC (A) IC (A) 1msec 10 DC Tc = 25°C Tj = 175°C Single Pulse 0.1 1 1 10 100 1000 10 100 VCE (V) Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE = 20V Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 45 45 40 40 35 35 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 25 20 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 30 ICE (A) ICE (A) 30 25 20 15 15 10 10 5 5 0 0 0 1 2 3 4 5 6 7 8 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs 3 1000 VCE (V) www.irf.com © 2013 International Rectifier 0 1 2 3 4 5 6 7 8 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF 45 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 40 35 30 70 60 IF (A) ICE (A) 20 40 15 30 10 20 5 10 0 0 1 -40°c 25°C 175°C 50 25 2 3 4 5 6 7 0 8 0.0 1.0 2.0 VCE (V) VF (V) 20 18 18 16 16 14 14 10 8 VCE (V) VCE (V) 20 ICE = 6.0A ICE = 12A ICE = 24A 12 ICE = 6.0A ICE = 12A ICE = 24A 10 8 6 6 4 4 2 2 0 0 5 10 15 5 20 10 15 20 VGE (V) VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 50 18 16 T J = 25°C T J = 175°C 40 14 12 ICE = 6.0A ICE = 12A ICE = 24A 10 8 ICE (A) VCE (V) 4.0 Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs 12 3.0 30 20 6 4 10 2 0 0 5 4 10 15 20 0 5 10 15 VGE (V) VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF 800 1000 700 tdOFF Swiching Time (ns) Energy (µJ) 600 EOFF 500 400 EON 300 200 100 tF tdON 10 tR 100 0 0 10 20 1 30 5 10 15 20 25 IC (A) IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V 1000 500 450 400 Swiching Time (ns) EOFF Energy (µJ) 350 300 250 EON 200 tdOFF 100 tF 150 tdON 100 tR 50 0 25 50 75 100 10 125 0 25 Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V 100 125 Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V 25 25 RG = 10Ω 20 20 RG = 22Ω 15 IRR (A) IRR (A) 75 RG (Ω) Rg ( Ω) RG = 47Ω 10 15 10 RG = 100Ω 5 5 0 0 5 50 10 20 30 0 25 50 75 100 125 IF (A) RG (Ω) Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF 1400 25 1200 20 24A 10Ω 15 QRR (µC) IRR (A) 1000 10 22Ω 47Ω 800 12A 600 100Ω 5 400 200 0 0 500 1000 0 1500 500 Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 12A; TJ = 175°C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C RG = 10Ω RG = 22Ω 300 Time (µs) 200 150 RG = 100Ω 50 0 20 120 18 110 16 100 14 90 12 80 10 70 8 60 6 50 4 40 2 30 20 0 0 10 20 30 Current (A) RG = 47Ω 250 100 8 10 12 IF (A) 14 16 18 VGE (V) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 10000 16 VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) 1500 diF /dt (A/µs) 350 Cies 1000 100 Coes Cres V CES = 300V 14 V CES = 400V 12 10 8 6 4 2 0 10 0 20 40 60 80 100 VCE (V) Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 1000 diF /dt ( A/µs) 400 Energy (µJ) 6.0A www.irf.com © 2013 International Rectifier 0 5 10 15 20 25 30 Q G, Total Gate Charge (nC) Fig. 25 - Typical Gate Charge vs. VGE ICE = 12A; L = 600µH Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 τJ 0.05 R1 R1 τJ τ1 0.02 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 R3 R3 τC τ2 τ1 τ2 τ3 τC τ3 Ci= τi/Ri Ci= τi/Ri 0.01 0.01 R2 R2 Ri (°C/W) τi (sec) 0.358 0.000171 0.424 0.001361 0.287 0.009475 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 τJ 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 R1 R1 τJ τ1 R2 R2 R3 R3 τC τ1 τ2 τ3 τ2 τ3 Ci= τi/Ri Ci= τi/Ri τC Ri (°C/W) τi (sec) 0.821094 0.000233 1.913817 0.001894 0.926641 0.014711 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) Notes: VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω. Pulse width limited by maximum junction temperature. Rθ is measured at TJ of approximately 90°C. When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC G force DUT 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2013 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF 500 25 500 50 400 20 400 40 tr 5% ICE 5 100 30 TEST 200 20 90% test 100 5% VCE 0 0 0 0 EOFF Loss EON -5 0.50 1.50 -100 11.70 11.90 Time(µs) Time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 25 20 QRR 15 500 250 400 200 tRR 10 VCE 300 150 VCE (V) 5 IRR (A) -10 12.10 0 -5 -10 10% Peak IRR Peak IRR -15 ICE 200 100 100 50 0 I CE (A) -100 -0.50 10 10% test current 5% VCE ICE (A) 10 VCE (V) VCE (V) 90% ICE 200 300 15 tf ICE (A) 300 0 -20 -25 -0.05 0.05 0.15 time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 9 www.irf.com © 2013 International Rectifier -100 -5.00 0.00 5.00 -50 10.00 time (µS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF D2-PAK (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2-Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM B LED O N W W 19, 2000 I N T H E A S S E M B L Y L IN E "C " N o t e : "P " i n a s s e m b l y lin e p o s i t i o n i n d i c a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM B LY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 13 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 IRGS/B/P4620D/EPbF D2Pak Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level D2Pak MSL1 TO-220AB N/A TO-247AC N/A TO-247AD N/A Moisture Sensitivity Level Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 14 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013