Diode Semiconductor Korea LL4448 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A SMALL SIGNAL SWITCHING DIODE FEATURES MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case Polarity:Color band denotes cathode 0.4±0.1 3.4 +0.3 -0.1 Weight: Approx 0.031 grams Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified MAXIMUM RATINGS LL4448 UNITS Reverse voltage VR 75 V Peak reverse voltage V RM 100 V IO 150 mA IFSM 2.0 Average forw ard rectified current Half w ave rectification w ith resistive load at VR=0V Forw ard surge current at tp=1µ s Pow er dissipaton at tamb =25oC Junction temperature Storage temperature range A 1) Ptot 500 TJ 175 mW o C o 35-55--- +175 TSTG C 1) Valid prov ided that electrodes are kept at ambient temperature. ELECTRICAL CHARACTERISTICS Forw ard voltage @ IF=5.0mA VF @IF=100mA Leakage current at V R=20V at V R=75V 111111111at V R=20V TJ =150oC Capacitance at V R=0V,f=1MHz,VHF=50mV MIN TYP MAX 0.62 0.93 0.72 - UNITS V 1.0 nA IR IR IR - - 25.0 5.0 - - 50.0 A A Ctot - - 4.0 pF Vfr - - 2.5 V trr - - 4.0 ns 5001) K/W - - Voltage rise w hen sw itching on tested w ith 50mA pulses tp=0.1 S,rise time 30ns, fp=5 to 100KHz Reverse recovery time from IF=10mA V R=6V,RL=100 ,at IR=1mA Thermal resistance junction to ambient Rectification effciency at 100MHz,V RF=2V R JA V 0.45 - 1)Valid prov ided that electrodes are kept at ambient temperature www.diode.kr Diode Semiconductor Korea LL4448 FIG.1 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG.2-- FORWARD CHARACTERISTICS mW mA 3 10 1000 900 2 800 10 IF 700 Ptot O TJ =100 C 600 10 500 O TJ =25 C 400 1 300 200 -1 10 100 0 0 25 100 175 T 200℃ -2 10 A 0 1 2V V F FIG.3-ADMISSIBLE REPETITIVE PEAK FORWORD CURRENT VERSUS PULSE DURATION 100 IFRM I V=tp/T T=1/tp 10 0.1 tp n=0 0.2 1 IFRM T 0.3 0.1 -3 -5 10 10 -2 -1 10 10 1 10S tp www.diode.kr