DSK LL4448 Small signal switching diode Datasheet

Diode Semiconductor Korea
LL4448
1111REVERSE VOLTAGE: 75 V
CURRENT: 0.15 A
SMALL SIGNAL SWITCHING DIODE
FEATURES
MINI-MELF
Silicon epitaxial diode
High speed switching diode
Cathode indification
φ1 .5±0.1
500mW power dissipation
MECHANICAL DATA
Case:MINI-MELF glass case
Polarity:Color band denotes cathode
0.4±0.1
3.4 +0.3
-0.1
Weight: Approx 0.031 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified
MAXIMUM RATINGS
LL4448
UNITS
Reverse voltage
VR
75
V
Peak reverse voltage
V RM
100
V
IO
150
mA
IFSM
2.0
Average forw ard rectified current
Half w ave rectification w ith resistive load
at VR=0V
Forw ard surge current at tp=1µ s
Pow er dissipaton at tamb
=25oC
Junction temperature
Storage temperature range
A
1)
Ptot
500
TJ
175
mW
o
C
o
35-55--- +175
TSTG
C
1) Valid prov ided that electrodes are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
Forw ard voltage @ IF=5.0mA
VF
@IF=100mA
Leakage current
at V R=20V
at V R=75V
111111111at V R=20V TJ =150oC
Capacitance at V R=0V,f=1MHz,VHF=50mV
MIN
TYP
MAX
0.62
0.93
0.72
-
UNITS
V
1.0
nA
IR
IR
IR
-
-
25.0
5.0
-
-
50.0
A
A
Ctot
-
-
4.0
pF
Vfr
-
-
2.5
V
trr
-
-
4.0
ns
5001)
K/W
-
-
Voltage rise w hen sw itching on
tested w ith 50mA pulses
tp=0.1 S,rise time
30ns, fp=5 to 100KHz
Reverse recovery time
from IF=10mA
V R=6V,RL=100 ,at IR=1mA
Thermal resistance junction to ambient
Rectification effciency at 100MHz,V RF=2V
R
JA
V
0.45
-
1)Valid prov ided that electrodes are kept at ambient temperature
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Diode Semiconductor Korea
LL4448
FIG.1 -- ADMISSIBLE POWER DISSIPATION VERSUS
AMBIENT TEMPERATURE
FIG.2-- FORWARD CHARACTERISTICS
mW
mA
3
10
1000
900
2
800
10
IF
700
Ptot
O
TJ =100 C
600
10
500
O
TJ =25 C
400
1
300
200
-1
10
100
0
0 25
100
175
T
200℃
-2
10
A
0
1
2V
V
F
FIG.3-ADMISSIBLE REPETITIVE PEAK FORWORD CURRENT VERSUS PULSE DURATION
100
IFRM
I
V=tp/T
T=1/tp
10
0.1
tp
n=0
0.2
1
IFRM
T
0.3
0.1
-3
-5
10
10
-2
-1
10
10
1
10S
tp
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