NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com • Collector −Emitter Sustaining Voltage − POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.275 VOLTS VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain − hFE • • • • = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc Low Collector −Emitter Saturation Voltage − VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc SOT−223 Surface Mount Packaging ESD Rating − Human Body Model: Class 1B − Machine Model: Class B Pb−Free Package is Available COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ Rating Symbol Value Unit VCEO 30 Vdc Collector−Base Voltage VCB 45 Vdc Emitter−Base Voltage VEB ± 6.0 Vdc Base Current − Continuous IB 1.0 Adc Collector Current IC 3.0 5.0 Adc PD 3.0 24 1.56 W mW/_C W Collector−Emitter Voltage − Continuous − Peak Total Power Dissipation @ TC = 25_C Derate above 25_C Total PD @ TA = 25_C mounted on 1″ sq. (645 sq. mm) Collector pad on FR−4 bd material Total PD @ TA = 25_C mounted on 0.012″ sq. (7.6 sq. mm) Collector pad on FR−4 bd material Operating and Storage Junction Temperature Range TJ, Tstg 0.72 W – 55 to + 150 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM AYW 9435R G G 1 A = Assembly Location Y = Year W = Work Week 9435R = Device Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping † NSB9435T1 SOT−223 1000/Tape & Reel NSB9435T1G SOT−223 (Pb−Free) 1000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 5 1 Publication Order Number: NSB9435T1/D NSB9435T1 THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance Junction−to−Case Junction−to−Ambient on 1″ sq.(645 sq. mm) Collector pad on FR−4 board material Junction−to−Ambient on 0.012″ sq. (7.6 sq. mm) Collector pad on FR−4 board material Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 s Value Unit _C/W RqJC RqJA RqJA 42 80 174 TL 260 _C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏ ÏÏ ÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏ Characteristics Symbol Min Typ Max 30 − − 6.0 − − − − − − 20 200 − − 700 − − − 0.155 − − 0.210 0.275 0.550 − − 1.25 − − 1.10 125 110 90 220 − − − − − 7.5 10 12.5 − 100 150 − 135 − − 110 − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) VCEO(sus) Emitter−Base Voltage (IE = 50 mAdc, IC = 0 Adc) VEBO Collector Cutoff Current (VCE = 25 Vdc) (VCE = 25 Vdc, TJ = 125°C) ICER Emitter Cutoff Current (VBE = 5.0 Vdc) IEBO Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 1) Collector−Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) VBE(sat) Base−Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) VBE(on) DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) hFE Resistor R1 Vdc Vdc Vdc − kW DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) Cob Input Capacitance (VEB = 8.0 Vdc) Cib Current−Gain − Bandwidth Product (Note 2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) fT 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. fT = |hFE| S ftest http://onsemi.com 2 pF pF MHz NSB9435T1 1000 0.25 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.3 IC = 3.0 A 0.2 0.15 TA = 150°C 25°C 100 0.1 1.2 A 0.8 A 0.05 0.5 A 0.25 A 0 0.001 0.01 −55°C VCE = 1.0 V 10 0.1 0.1 1 IB, BASE CURRENT (mA) 10 IC, COLLECTOR CURRENT (A) Figure 1. Collector Saturation Region Figure 2. DC Current Gain 1000 10 TA = 150°C V, VOLTAGE (V) hFE, DC CURRENT GAIN 1 25°C 100 −55°C VBE(sat) 1 VCE(sat) 0.1 VCE = 4.0 V IC/IB = 10 10 0.01 0.1 1 10 1.0E−01 IC, COLLECTOR CURRENT (A) 1.0E+00 1.0E+01 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. “ON” Voltages 1.0E+00 1.2 VBE(sat) V, VOLTAGE (V) V, VOLTAGE (V) 1 VCE(sat) 1.0E−01 −55°C 0.8 25°C 0.6 TA = 155°C 0.4 0.2 IC/IB = 50 1.0E−02 0 1.0E−01 1.0E+00 1.0E+01 0.1 IC, COLLECTOR CURRENT (A) 1 IC, COLLECTOR CURRENT (A) Figure 5. “ON” Voltages Figure 6. VBE(on) Voltage http://onsemi.com 3 10 NSB9435T1 10 IC, COLLECTOR CURRENT (A) Cob, OUTPUT CAPACITANCE (pF) 1000 100 10 f = 1 MHz TA = 25°C 1 0.5 ms 5.0 ms 1.0 100 ms 0.1 0.01 BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT 0.001 0.1 1 10 100 0.1 Figure 7. Output Capacitance PD, POWER DISSIPATION (WATTS) TC 2.0 1.0 TA 0 75 100 100 There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 8 is based on T J(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. T J(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 3.0 50 10 Figure 8. Active Region Safe Operating Area 4.0 25 1.0 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (V) 125 150 T, TEMPERATURE (°C) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Power Derating 1.0 D = 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 RqJA(t) = r(t) qJA qJA = 174°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) qJA(t) SINGLE PULSE 0.001 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.0001 0.0001 0.001 0.01 0.1 1.0 t, TIME (seconds) Figure 10. Thermal Response http://onsemi.com 4 10 100 1000 NSB9435T1 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D b1 4 HE 1 2 3 E b e1 e 0.08 (0003) C q A A1 DIM A A1 b b1 c D E e e1 L1 HE q STYLE 1: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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