BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON • Complementary Types are BD438 and BD442 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating COLLECTOR 2, 4 Symbol Value Unit Collector−Emitter Voltage BD435G BD437G BD439G BD441G VCEO Collector−Base Voltage BD435G BD437G BD439G BD441G VCBO Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 36 288 W W/°C – 55 to + 150 °C Operating and Storage Junction Temperature Range Vdc BASE 3 32 45 60 80 EMITTER 1 Vdc 32 45 60 80 TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.5 °C/W TO−225 CASE 77−09 STYLE 1 1 2 3 MARKING DIAGRAM YWW BD4xxG Y WW BD4xx G = Year = Work Week = Device Code xx = 35, 37, 37T, 39, 41 = Pb−Free Package ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 17 1 Package Shipping BD435G TO−225 (Pb−Free) 500 Units/Box BD437G TO−225 (Pb−Free) 500 Units/Box BD437TG TO−225 (Pb−Free) 50 Units/Rail BD439G TO−225 (Pb−Free) 500 Units/Box BD441G TO−225 (Pb−Free) 500 Units/Box Publication Order Number: BD437/D BD435G, BD437G, BD439G, BD441G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Collector−Emitter Breakdown Voltage (IC = 100 mA, IB = 0) BD435G BD437G BD439G BD441G V(BR)CEO Collector−Base Breakdown Voltage (IC = 100 mA, IB = 0) BD435G BD437G BD439G BD441G V(BR)CBO Emitter−Base Breakdown Voltage (IE = 100 mA, IC = 0) V(BR)EBO ICBO Emitter Cutoff Current (VEB = 5.0 V) IEBO DC Current Gain (IC = 10 mA, VCE = 5.0 V) BD435G BD437G BD439G BD441G hFE DC Current Gain (IC = 500 mA, VCE = 1.0 V) BD435G BD437G BD439G, BD441G hFE DC Current Gain (IC = 2.0 A, VCE = 1.0 V) BD435G BD437G BD439G BD441G hFE VBE(on) Unit − − − − − − − − − − − − 5.0 − − Vdc mAdc − − 0.1 − − 0.1 − − 0.1 − − 0.1 − − 1.0 mAdc − − − − − − − − − − − − − 475 375 475 − 50 40 25 15 Base−Emitter On Voltage (IC = 2.0 A, VCE = 1.0 V) − − − − 32 45 60 80 85 85 40 VCE(sat) Max Vdc 40 30 20 15 Collector Saturation Voltage (IC = 2.0 A, IB = 0.2 V) BD435G (IC = 3.0 A, IB = 0.3 A) BD437G, BD439G, BD441G Typ Vdc 32 45 60 80 Collector Cutoff Current (VCB = 32 V, IE = 0) BD435G (VCB = 45 V, IE = 0) BD437G (VCB = 60 V, IE = 0) BD439G (VCB = 80 V, IE = 0) BD441G Current−Gain − Bandwidth Product (VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz) Min − − − − − − − − Vdc − − 0.5 − − 0.8 − − 1.1 3.0 − − Vdc fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) BD435G, BD437G, BD439G, BD441G 2.0 1.6 IC = 10 A 100 mA 1.0 A 3.0 A 1.2 0.8 TJ = 25°C 0.4 0 0.05 0.070.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 30 20 50 70 100 200 300 500 hFE, CURRENT GAIN (NORMALIZED) Figure 1. Collector Saturation Region 200 180 160 140 120 BD433, 435, 437 BD439, 441 100 80 60 40 20 0 0.01 0.02 0.03 0.05 0.2 0.3 0.5 0.1 IC, COLLECTOR CURRENT (AMP) 1 2 3 5 Figure 2. Current Gain IC, COLLECTOR CURRENT (AMP) 2.0 TJ = 25°C VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.6 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.030.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 IC, COLLECTOR CURRENT (AMP) 10 5 ms 4.0 TJ = 150°C 1.0 dc SECONDARY BREAKDOWN THERMAL LIMIT TC = 25°C BONDING WIRE LIMIT 0.5 CURVES APPLY BELOW RATED VCEO BD437 BD439 BD441 0.1 1.0 Figure 3. “On” Voltage 5.0 50 2.0 10 20 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 4. Active Region Safe Operating Area http://onsemi.com 3 BD435G, BD437G, BD439G, BD441G PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE b2 2X e b FRONT VIEW c SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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