Diodes MMDT2222A-7-F Dual npn small signal surface mount transistor Datasheet

MMDT2222A
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMDT2907A)
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
A
C2
•
•
•
•
•
•
•
E2
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe)
Terminal Connections: See Diagram
Marking Information: K1P, See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.006 grams (approximate)
Maximum Ratings
E1
B C
Mechanical Data
•
•
SOT-363
B1
B2
C1
H
K
M
J
D
C2
F
B1
E2
B2
L
E1
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
—
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
α
0°
8°
All Dimensions in mm
C1
@TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
IC
600
mA
Collector Current - Continuous (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
Pd
200
mW
RθJA
625
°C/W
Tj, TSTG
-55 to +150
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30125 Rev. 12 - 2
1 of 4
www.diodes.com
MMDT2222A
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
75
⎯
V
IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
⎯
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
⎯
V
IE = 10μA, IC = 0
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
ICBO
⎯
10
nA
μA
Collector Cutoff Current
ICEX
⎯
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current
IEBO
⎯
10
nA
VEB = 3.0V, IC = 0
IBL
⎯
20
nA
VCE = 60V, VEB(OFF) = 3.0V
hFE
35
50
75
100
40
50
35
⎯
⎯
⎯
300
⎯
⎯
⎯
⎯
IC = 100μA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.6
⎯
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Cobo
⎯
8
pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—
25
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
⎯
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure
NF
⎯
4.0
dB
VCE = 10V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
Delay Time
td
⎯
10
ns
Rise Time
tr
⎯
25
ns
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
60
ns
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Notes:
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
5. Short duration pulse test used to minimize self-heating effect.
200
TA = 125°C
150
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
1,000
100
50
100
TA = -25°C
TA = +25°C
10
VCE = 1.0V
0
0
25
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
DS30125 Rev. 12 - 2
1
0.1
200
2 of 4
www.diodes.com
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 2, Typical DC Current Gain vs.
Collector Current
1,000
MMDT2222A
© Diodes Incorporated
2.0
VCE, COLLECTOR-EMITTER VOLTAGE (V)
100
CAPACITANCE (pF)
f = 1MHz
30
20
Cibo
10
5.0
Cobo
1.0
0.1
IC = 10mA
IC = 100mA
1.4
IC = 300mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.1
10
1
IB, BASE CURRENT (mA)
Fig. 4, Typical Collector Saturation Region
0.01
100
1.0
VBE(ON), BASE-EMITTER VOLTAGE (V)
IC
IB = 10
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC = 30mA
IC = 1mA
1.6
1.0
10
50
VR, REVERSE VOLTAGE (V)
Fig. 3, Typical Capacitance Characteristics
0.5
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
T A = -50°C
0
1.8
0.9
0.8
0.7
VCE = 5V
T A = -50°C
TA = 25°C
0.6
0.5
TA = 150°C
0.4
0.3
0.2
0.1
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6, Typical Base-Emitter Voltage vs. Collector Current
fT, GAIN BANDWIDTH PRODUCT (MHz)
1,000
100
10
1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 7, Typical Gain Bandwidth Product
vs. Collector Current
DS30125 Rev. 12 - 2
100
3 of 4
www.diodes.com
MMDT2222A
© Diodes Incorporated
Ordering Information
Notes:
6.
(Note 6)
Device
Packaging
Shipping
MMDT2222A-7-F
SOT-363
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K1P YM
K1P YM
Date Code Key
Year
Code
1998
J
Month
Code
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
2002
N
Apr
4
2003
P
May
5
2004
R
2005
S
Jun
6
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30125 Rev. 12 - 2
4 of 4
www.diodes.com
MMDT2222A
© Diodes Incorporated
Similar pages