www.fairchildsemi.com FS6M12653RTC Fairchild Power Switch(FPS) Features Description • • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective LCD monitor power supply. Fixed Frequency Internal Burst Mode Controller for Stand-by Mode Pulse By Pulse Over Current Limiting Over Current Protection(Auto Restart Mode) Over Voltage Protection (Auto Restart Mode) Over Load Protection(Auto Restart Mode) Internal Thermal Shutdown Function(Latch Mode) Under Voltage Lockout Internal High Voltage Sense FET Soft Start TO-220F-5L 1 1. Drain 2. GND 3. VCC 4. Feedback 5. SoftStart Internal Block Diagram Vref SoftStart Internal Bias OSC 5 Drain 3 1 Vref Vref UVLO Burst mode controller Vfb Vth=1V VCC S Ron Q R Vcc Vth=11V/12V Roff PWM Feedbock 4 2.5R R Ifb Vref Vfb Offset Vcc Rsenese Idelay OCL OLP Filter (130nsec) Vth=2V Vth=7.5V S Vcc Vth=33V OVP UVLO Reset (Vcc=9V) R Q Q S R 2 GND TSD Power-on Reset (Vcc=6.5V) (Tj=160 ℃) Rev.1.0.3 ©2003 Fairchild Semiconductor Corporation FS6M12653RTC Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit VDGR 650 V VGS ±30 V IDM 21.2 ADC Continuous Drain Current (Tc = 25°C) ID 5.3 ADC Continuous Drain Current (TC=100°C) ID 3.4 ADC IAS(EAS) 27(960) A(mJ) VCC, MAX 35 V VFB -0.3 to VCC V Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) (3) Single Pulsed Avalanche Current (Energy Maximum Supply Voltage Input Voltage Range (2) ) VSS -0.3 to 10 V PD(Watt H/S) 50 W Darting 0.4 W/°C Operating Junction Temperature Tj +150 °C Operating Ambient Temperature TA -25 to +85 °C TSTG -55 to +150 °C Total Power Dissipation Storage Temperature Range Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L=81mH, starting Tj=25°C 3. L=13uH, starting Tj=25°C 2 FS6M12653RTC Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current Static Drain-Source On Resistance (1) Forward Transconductance (2) Min. Typ. VGS=0V, ID=250µA 650 - - V VDS=650V, VGS=0V - - 200 µA IDSS VDS=520V VGS=0V, TC=125°C - - 300 µA RDS(ON) VGS=10V, ID=1.8A - 0.73 0.9 Ω gfs VDS=50V, ID=1.8A - - - S - 1820 - VGS =0V, VDS=25V, f = 1MHz - 185 - - 32 - - 38 - - 120 - - 200 - - 100 - - 60 - - 10 - - 30 - Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn On Delay Time td(on) Rise Time Turn Off Delay Time Fall Time tr td(off) tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd Condition VDD=325V, ID=6.5A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=6.5A, VDS=520V (MOSFET Switching time are Essentially independent of Operating temperature) Max. Unit pF nS nC Note: 1. Pulse test : Pulse width ≤ 300µS, duty 2% 1 2. S = ---R 3 FS6M12653RTC Electrical Characteristics (Continued) (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage VSTART VFB = GND 14 15 16 V Stop Threshold Voltage VSTOP VFB = GND 8 9 10 V 63 70 77 kHz OSCILLATOR SECTION Initial Frequency FOSC Voltage Stability FSTABLE 12V ≤ VCC ≤ 23V 0 1 3 % Temperature Stability (2) ∆FOSC -25°C ≤ Ta ≤ 85°C 0 ±5 ±10 % Maximum Duty Cycle DMAX - 75 80 85 % Minimum Duty Cycle DMIN - - - 0 % - FEEDBACK SECTION Feedback Source Current IFB VFB = GND 0.7 0.9 1.1 mA Shutdown Feedback Voltage VSD VFB ≥ 6.9V 6.9 7.5 8.1 V VFB = 5V 3.2 4.0 4.8 µA Shutdown Delay Current IDELAY SOFTSTART SECTION Softstart Voltage VSS VFB = 2 4.7 5.0 5.3 V Softstart Current ISS VSS = V 0.8 1.0 1.2 mA Burst Mode Low Threshold Voltage VBURL VFB = 0V 10.4 11.0 11.6 V Burst Mode High Threshold Voltage VBURH VFB = 0V 11.4 12.0 12.6 V VCC = 10.5V 0.7 1.0 1.3 V IBURPK VCC = 10.5V, VFB = 0V 0.46 0.6 0.74 A FBUR VCC = 10.5V, VFB = 0V 63 70 77 kHz 2.82 3.2 3.58 A 29 33 37 V BURST MODE SECTION Burst Mode Enable Feedback Voltage Burst Mode Peak Current Limit (4) Burst Mode Frequency VBEN CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (4) IOVER - PROTECTION SECTION VCC ≥ 29V Over Voltage Protection VOVP Over Current Latch Voltage (3) VOCL - 1.8 2.0 2.2 V TSD - 140 160 - °C - 0.1 0.17 mA - 10 15 mA Thermal Shutdown Temp (2) TOTAL DEVICE SECTION Start Up Current Operating Supply Current (1) ISTART VFB = GND, VCC = 14V IOP VFB = GND, VCC = 16V IOP(MIN) VFB = GND, VCC = 12V IOP(MAX) VFB = GND, VCC = 30V Notes: 1. These parameters are the current flowing in the Control IC. 2. These parameters, although guaranteed at the design, are not 100% tested in production. 3. These parameters, although guaranteed, are tested in EDS(wafer test) process. 4. These parameters indicate Inductor current. 4 FS6M12653RTC Typical Performance Characteristics Start Up Current vs. Temp 0.150 [mA] Operating Current vs. Temp [mA] 11.0 0.125 10.5 0.100 10.0 0.075 9.5 0.050 -25 0 25 50 75 100 125 150 9.0 -25 0 25 Temp 10.0 15.5 9.5 15.0 9.0 14.5 8.5 0 25 50 75 100 125 150 [V] 125 150 8.0 -25 Stop Threshold Voltage vs. Temp 0 25 50 75 100 125 150 Temp Temp Figure 4. Stop Threshold Voltage vs. Temp Figure 3. Start Threshold Voltage vs. Temp [KHz] 100 Figure 2. Operating Current vs. Temp Start Threshold Voltage vs. Temp 14.0 -25 75 Temp Figure 1. Start Up Current vs. Temp 16.0 [V] 50 Initial Freqency vs. Temp 81.0 76 Maximum Duty vs. Temp [%] 74 80.5 72 80.0 70 68 79.5 66 64 -25 0 25 50 75 100 125 Temp Figure 5. Initial Freqency vs. Temp 150 79.0 -25 0 25 50 75 100 125 150 Temp Figure 6. Maximum Duty vs. Temp 5 FS6M12653RTC Typical Performance Characteristics (Continued) 0.45 [V] Feedback Offset Voltage vs. Temp 1.1 0.40 [mA] Feedback Source Current vs. Temp 1.0 0.35 0.9 0.30 0.8 0.25 0.20 -25 0 25 50 75 100 125 150 0.7 -25 0 25 [uA] ShutDown Delay Current vs. Temp 7.55 4.0 7.50 3.6 7.45 0 25 50 75 100 125 150 7.40 -25 0 25 Softstart Voltage vs. Temp 34.0 5.01 33.5 5.00 33.0 4.99 32.5 4.98 -25 0 25 50 75 100 125 Temp Figure 11. Softstart Voltage vs. Temp 6 150 50 75 100 125 150 Figure 10. ShutDown Feedback Voltage vs. Temp Figure 9. ShutDown Delay Current vs. Temp [V] 125 Temp Temp 5.02 100 [V] ShutDown Feedback Voltage vs. Temp 7.60 4.4 3.2 -25 75 Figure 8. Feedback Source Current vs. Temp Figure 7. Feedback Offset Voltage vs. Temp 4.8 50 Temp Temp 150 [V] 32.0 -25 0 25 50 75 Temp 100 125 Figure 12. Over Voltage Protection vs. Temp 150 FS6M12653RTC Typical Performance Characteristics (Continued) [V] Burst Mode Low Voltage vs. Temp [V] 11.2 12.2 11.1 12.1 11.0 12.0 10.9 11.9 10.8 -25 0 25 50 75 100 125 150 11.8 -25 Burst Mode High Voltage vs. Temp 0 25 Temp 0.72 0.66 0.66 0.60 0.60 0.54 0.54 50 75 Temp 125 150 [A] Burst Mode Peak Current vs. Temp [A] Burst Mode Peak Current vs. Temp 25 100 Figure 14. Burst Mode High Voltage vs. Temp 0.72 0 75 Temp Figure 13. Burst Mode Low Voltage vs. Temp 0.48 -25 50 100 125 Figure 15. Burst Mode Peak Current vs. Temp 150 0.48 -25 0 25 50 75 Temp 100 125 150 Figure 16. Burst Mode Peak Current vs. Temp 7 FS6M12653RTC Package Dimensions TO-220F-5L 8 FS6M12653RTC Package Dimensions (Continued) TO-220F-5L(Forming) 9 FS6M12653RTC Ordering Information Product Number FS6M12653RTCTU FS6M12653RTCYDT Package Marking Code BVdss Rds(on) TO-220F-5L 6M12653R C 650V 0.7 TO-220F-5L(Forming) TU : Non Forming Type YDT : Forming Type DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 8/25/03 0.0m 001 Stock#DSxxxxxxxx 2003 Fairchild Semiconductor Corporation