Freescale Semiconductor Technical Data Document Number: MRF18085B Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BLR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.5 dB (Typ) @ 85 Watts CW Efficiency - 50% (Typ) @ 85 Watts CW • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 85 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency, and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1930- 1990 MHz, 85 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF18085BLR3 CASE 465A - 06, STYLE 1 NI - 780S MRF18085BLSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 273 1.56 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.79 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF18085BLR3 MRF18085BLSR3 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.18 0.21 Vdc Crss — 3.6 — pF Common- Source Amplifier Power Gain @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) Gps 11.5 12.5 — dB Drain Efficiency @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) η 46 50 — % Input Return Loss @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) IRL — - 12 -9 dB P1 dB Output Power (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) P1dB 80 90 — W Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) On Characteristics Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) 1. Part is internally matched both on input and output. MRF18085BLR3 MRF18085BLSR3 2 RF Device Data Freescale Semiconductor VSUPPLY C3 VBIAS C7 C11 R1 + C2 R2 C1 C8 R3 RF INPUT C10 + Z1 Z2 C1, C10 C2 C3, C6 C4 C5 C7, C8 C9 C11 R1, R2 R3 Z5 Z6 Z3 Z7 C6 C5 C9 C4 Z4 RF OUTPUT DUT 1.0 nF Chip Capacitors, ATC 10 mF, 35 V Tantalum Capacitor 10 pF Chip Capacitors, ATC 3.3 pF Chip Capacitor, ATC 4.7 pF Chip Capacitor, ATC 100 nF Chip Capacitors, ACCU - P (1206) 3.9 pF Chip Capacitor, ATC 470 mF, 63 V Electrolytic Capacitor 1.0 kW Chip Resistors (0805) 2 x 18 kW Chip Resistor (1206) Z1 Z2 Z3 Z4 Z5 Z6 Z7 PCB 1.654″ x 0.082″ Microstrip 0.207″ x 0.082″ Microstrip 0.362″ x 1.260″ Microstrip 0.583″ x 0.669″ Microstrip 0.449″ x 0.179″ Microstrip 0.877″ x 0.082″ Microstrip 0.326″ x 0.082″ Microstrip 0.030″ Glass Teflon® (er = 2.55) Figure 1. 1930 - 1990 MHz Test Fixture Schematic C2 C11 VBIAS C3 R1 VSUPPLY C7 C10 R2 C1 R3 C8 C6 A1 C4 C9 A2 C5 MRF18085B Rev 0 Ground Ground Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1930 - 1990 MHz Test Fixture Component Layout MRF18085BLR3 MRF18085BLSR3 RF Device Data Freescale Semiconductor 3 VBIAS + C13 ÎÎÎ ÎÎÎ ÎÎÎ C1 C12 T1 R1 VSUPPLY R5 + R2 B1 C10 C2 C11 R3 C3 T2 C4 R4 C14 R7 C5 R6 RF INPUT Z1 Z2 Z3 Z6 Z7 Z8 Z9 RF OUTPUT Z5 Z4 C8 C7 C9 B1 C1, C2 C3, C4 C5 C7 C8 C9 C10 C11, C12 C13 C14 Short RF Ferrite Bead, #27 430119447 1 mF Chip Capacitors, ACCU - P (0805) 1 nF Chip Capacitors, ACCU - P (0805) 10 pF Chip Capacitor, ACCU - P (0805) 1.5 pF Chip Capacitor, ACCU - P (0805) 8.2 pF Chip Capacitor, ACCU - P (0805) 1.0 pF Chip Capacitor, ACCU - P (0805) 100 mF, 63 V Electrolytic Capacitor 10 nF Chip Capacitors (0805) 10 mF, 35 V Tantalum Capacitor 8.2 pF Chip Capacitor, ACCU - P (0805) R1 R2 R3 R4 R5 R6, R7 T1 T2 Z1 - Z9 Substrate 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistor (0805) 1.2 kΩ Chip Resistor (0805) 2.2 kΩ Chip Resistor (0805) 5 kΩ Chip Resistor (0805) 9 Ω Chip Resistors (1206) (18 Ω x 18 Ω) Voltage Regulator, Micro - 8, #LP2951 NPN Bipolar Transistor, SOT - 23, #BC847 Printed Transmission Lines 0.5 mm Rogers 4350 (er = 3.53) Figure 3. 1930 - 1990 MHz GSM EDGE Optimized Demo Board Schematic MRF18085BLR3 MRF18085BLSR3 4 RF Device Data Freescale Semiconductor VBIAS VSUPPLY Ground R1 C1 R2 D T1 R3 R4 C2 T2 + C10 C13 C3 C12 B1 C14 C5 R5 R6 C4 C11 C7 C8 C9 MRF18085 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. 1930 - 1990 MHz GSM EDGE Optimized Demo Board Component Layout MRF18085BLR3 MRF18085BLSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS (Performed on a GSM EDGE Optimized Demo Board) 14 5 800 mA 600 mA 400 mA 11 VDD = 26 Vdc f = 1960 MHz 10 1 100 10 Pout, OUTPUT POWER (WATTS) VDD = 26 Vdc IDQ = 800 mA 4 Pout = 38 W Avg. 3.5 3 2.5 28 W Avg. 2 1.5 19 W Avg. 1 0.5 0 1.91 Figure 5. Power Gain versus Output Power 1.94 1.95 1.96 1.97 f, FREQUENCY (GHz) 1.98 1.99 2.0 6 EVM, ERROR VECTOR MAGNITUDE (%) 14 G ps, POWER GAIN (dB) 1.93 Figure 6. Error Vector Magnitude versus Frequency 13.5 13 12.5 32 V 12 11.5 28 V 11 24 V 10.5 10 VDD = 20 V 9.5 9 14 5 13 Gps 4 12 3 11 2 10 EVM 1 9 8 0 0 20 60 80 40 Pout, OUTPUT POWER (WATTS) 100 34 Figure 7. Power Gain versus Output Power 13.5 30 W −10 15 50 14 40 −20 −25 11.5 80 W 11 1.85 1.90 1.95 f, FREQUENCY (GHz) VDD = 26 Vdc IDQ = 800 mA 2.00 Figure 9. Power Gain and IRL versus Frequency 50 60 12.5 12 48 16 −15 30 W 40 42 44 46 38 Pout, OUTPUT POWER (dBm) AVG. −5 13 80 W 36 Figure 8. EVM and Gain versus Output Power G ps, POWER GAIN (dB) 14 G ps, POWER GAIN (dB) 1.92 G ps , POWER GAIN (dB) 12 4.5 Gps 13 30 12 20 −30 11 −35 2.05 10 h 1 VDD = 26 Vdc IDQ = 800 mA f = 1960 MHz 10 Pout, OUTPUT POWER (WATTS) η , DRAIN EFFICIENCY (%) 13 G ps, POWER GAIN (dB) EVM, ERROR VECTOR MAGNITUDE (%) IDQ = 1000 mA 10 0 100 Figure 10. Power Gain and Efficiency versus Output Power MRF18085BLR3 MRF18085BLSR3 6 RF Device Data Freescale Semiconductor GSM TEST SIGNAL −10 −20 Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz −30 −40 (dB) −50 −60 −70 −80 −90 400 kHz 400 kHz 600 kHz 600 kHz −100 −110 Center 1.96 GHz 200 kHz Span 2 MHz Figure 11. EDGE Spectrum MRF18085BLR3 MRF18085BLSR3 RF Device Data Freescale Semiconductor 7 Zo = 5 Ω f = 1990 MHz Zload f = 1805 MHz f = 1805 MHz f = 1990 MHz Zsource VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW f MHz Zsource Ω Zload Ω 1805 1.43 - j3.74 2 - j3.60 1880 1.27 - j3.95 1.98 - j3.57 1930 1.5 - j4.13 2.13 - j3.16 1990 1.86 - j4.76 2.17 - j3.36 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF18085BLR3 MRF18085BLSR3 8 RF Device Data Freescale Semiconductor NOTES MRF18085BLR3 MRF18085BLSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF18085BLR3 MRF18085BLSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M R (INSULATOR) bbb N M T A M B M ccc M T A M M aaa M T A M ccc H B S (LID) M T A M B (LID) M (INSULATOR) B M C F E A T A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF18085BLR3 4X U (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 2X 2 B (FLANGE) K D bbb M T A B M N M (LID) ccc M R M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) F T SEATING PLANE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE CASE 465A - 06 ISSUE H NI - 780S MRF18085BLSR3 MRF18085BLR3 MRF18085BLSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Technical Information Center 3 - 20- 1, Minami - Azabu, Minato - ku Tokyo 106 - 0047, Japan 0120 191014 or +81 3 3440 3569 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF18085BLR3 MRF18085BLSR3 Document Number: MRF18085B Rev. 6, 5/2006 12 RF Device Data Freescale Semiconductor