ON MUN5314DW1 Complementary bias resistor transistor Datasheet

MUN5314DW1,
NSBC114YPDXV6,
NSBC114YPDP6
Complementary Bias
Resistor Transistors
R1 = 10 kW, R2 = 47 kW
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NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features





PIN CONNECTIONS
(3)
(2)
R1
Q2
R2
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
6
SOT−363
CASE 419B
IC
100
mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
6
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Package
Shipping†
MUN5314DW1T1G,
SMUN5314DW1T1G
SOT−363
3,000/Tape & Reel
NSBC114YPDXV6T1G
SOT−563
4,000/Tape & Reel
NSBC114YPDXV6T5G
SOT−563
8,000/Tape & Reel
NSBC114YPDP6T5G
SOT−963
8,000/Tape & Reel
Device
14 M G
G
1
SOT−563
CASE 463A
1
SOT−963
CASE 527AD
14/Q
M
G
14 M G
G
Q
Collector Current − Continuous
(6)
MARKING DIAGRAMS
MAXIMUM RATINGS
Symbol
R1
(5)
(TA = 25C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Rating
R2
Q1
(4)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
(1)
1
MG
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
DTC114YP/D
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
187
256
1.5
2.0
mW
MUN5314DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
PD
RqJA
mW/C
670
490
C/W
250
385
2.0
3.0
mW
MUN5314DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
Junction and Storage Temperature Range
PD
RqJA
RqJL
TJ, Tstg
493
325
188
208
mW/C
C/W
C/W
−55 to +150
C
357
2.9
mW
mW/C
NSBC114YPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
PD
RqJA
350
C/W
NSBC114YPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
Junction and Storage Temperature Range
PD
RqJA
TJ, Tstg
500
4.0
250
mW
mW/C
C/W
−55 to +150
C
231
269
1.9
2.2
MW
NSBC114YPDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Derate above 25C
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
PD
RqJA
540
464
mW/C
C/W
NSBC114YPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Derate above 25C
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
Junction and Storage Temperature Range
1.
2.
3.
4.
5.
PD
RqJA
TJ, Tstg
FR−4 @ Minimum Pad.
FR−4 @ 1.0  1.0 Inch Pad.
Both junction heated values assume total power is sum of two equally powered channels.
FR−4 @ 100 mm2, 1 oz. copper traces, still air.
FR−4 @ 500 mm2, 1 oz. copper traces, still air.
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2
339
408
2.7
3.3
369
306
−55 to +150
MW
mW/C
C/W
C
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
ELECTRICAL CHARACTERISTICS (TA = 25C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
−
−
100
−
−
500
−
−
0.2
50
−
−
50
−
−
80
140
−
−
−
0.25
−
−
0.7
0.7
−
−
−
−
0.8
0.9
−
−
−
−
0.2
4.9
−
−
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector-Emitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
Collector-Emitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA) (NPN)
(VCE = 5.0 V, IC = 100 mA) (PNP)
Vi(off)
Input Voltage (On)
(VCE = 0.2 V, IC = 1.0 mA) (NPN)
(VCE = 0.2 V, IC = 1.0 mA) (PNP)
Vi(on)
Output Voltage (On)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
Input Resistor
R1
7.0
10
13
Resistor Ratio
R1/R2
0.17
0.21
0.25
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle  2%.
PD, POWER DISSIPATION (mW)
400
350
300
250
200
(1) SOT−363; 1.0  1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm2, 1 oz. Copper Trace
(1) (2) (3)
150
100
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
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3
V
Vdc
Vdc
Vdc
Vdc
kW
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
1
1000
IC/IB = 10
VCE = 10 V
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5314DW1, NSBC114YPDXV6
25C
0.1
150C
−55C
0.01
0
10
20
30
40
25C
100
−55C
10
1
0.1
50
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
100
Figure 3. DC Current Gain
3.6
100
3.2
2.8
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25C
2.4
2
1.6
1.2
0.8
0.4
0
0
10
20
30
40
50
10
−55C
1
25C
150C
0.1
0.01
0.001
VO = 5 V
VR, REVERSE VOLTAGE (V)
3
4
5
6
7
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
0
1
2
100
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
150C
10
−55C
25C
1
150C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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4
50
8
9
10
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
1
1000
IC/IB = 10
VCE = 10 V
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5314DW1, NSBC114YPDXV6
25C
150C
0.1
−55C
0.01
0
10
20
30
40
25C
−55C
100
10
1
0.1
50
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
100
9
8
7
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25C
6
5
4
3
2
1
0
10
20
30
40
50
−55C
10
1
25C
0.1
150C
0.01
0.001
VO = 5 V
VR, REVERSE VOLTAGE (V)
2
3
4
5
Vin, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
0
1
100
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
100
Figure 8. DC Current Gain
10
0
150C
10
25C
−55C
1
150C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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5
50
6
7
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
1
1000
IC/IB = 10
VCE = 10 V
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC114YPDP6
25C
0.1
150C
−55C
0.01
0
10
20
30
40
25C
100
−55C
10
1
0.1
50
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) vs. IC
100
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25C
2
1.6
1.2
0.8
0.4
0
10
20
30
40
50
−55C
10
1
25C
0.1
0.01
0.001
150C
0
1
VO = 5 V
VR, REVERSE VOLTAGE (V)
2
3
4
5
Vin, INPUT VOLTAGE (V)
Figure 14. Output Capacitance
Figure 15. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
100
Figure 13. DC Current Gain
2.4
0
150C
10
25C
−55C
1
150C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
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6
50
6
7
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
1
1000
IC/IB = 10
VCE = 10 V
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
NSBC114YPDP6
25C
150C
0.1
−55C
0.01
0
10
20
30
40
25C
100
−55C
10
1
0.1
50
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) vs. IC
100
6
5
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25C
4
3
2
1
0
10
20
30
40
50
−55C
10
1
25C
0.1
0.01
0.001
150C
0
1
VR, REVERSE VOLTAGE (V)
2
3
4
5
6
7
12
Vin, INPUT VOLTAGE (V)
100
10
25C
−55C
1
150C
VO = 0.2 V
0.1
0
VO = 5 V
11
10
Figure 20. Output Current vs. Input Voltage
Figure 19. Output Capacitance
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
100
Figure 18. DC Current Gain
7
0
150C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage vs. Output Current
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7
50
11
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
6
5
DIM
A
A1
A3
b
C
D
E
e
L
HE
4
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
M
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
A3
C
A
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
SC−88/SC70−6/SOT−363
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
D
−X−
6
5
1
e
2
A
4
E
−Y−
3
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
DIM
A
b
C
D
E
e
L
HE
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
PACKAGE DIMENSIONS
SOT−963
CASE 527AD
ISSUE E
D
X
Y
6
5
4
1
2
3
HE
E
e
6X
6X
BOTTOM VIEW
DIM
A
b
C
D
E
e
HE
L
L2
C
SIDE VIEW
TOP VIEW
6X L2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
A
L
MILLIMETERS
MIN
NOM
MAX
0.34
0.37
0.40
0.10
0.15
0.20
0.07
0.12
0.17
0.95
1.00
1.05
0.75
0.80
0.85
0.35 BSC
0.95
1.00
1.05
0.19 REF
0.05
0.10
0.15
b
0.08 X Y
RECOMMENDED
MOUNTING FOOTPRINT*
6X
6X
0.35
0.20
PACKAGE
OUTLINE
1.20
0.35
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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