APT11044B2FLL
APT11044LFLL
1100V 26A 0.440Ω
POWER MOS 7
R
FREDFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-264
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
T-MAX™
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT11044JFLL
UNIT
1100
Volts
Drain-Source Voltage
26
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
104
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
-55 to 150
°C
300
Amps
26
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1100
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 13A)
TYP
MAX
UNIT
Volts
0.440
Ohms
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
11-2003
Characteristic / Test Conditions
050-7177 Rev A
Symbol
APT11044B2FLL - LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Ciss
Input Capacitance
VGS = 0V
Coss
Output Capacitance
VDS = 25V
C rss
3
Total Gate Charge
Qgs
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
ID = 22A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
td(off)
VDD = 550V
Turn-off Delay Time
tf
ID = 22A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
581
ID = 22A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
ns
961
VDD = 733V, VGS = 15V
Eon
nC
14
RG = 0.6Ω
Eon
UNIT
pF
153
180
32
111
18
9
45
VGS = 10V
Qgd
MAX
5643
828
VDD = 550V
Gate-Source Charge
tr
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qg
MIN
µJ
1812
VDD = 733V VGS = 15V
ID = 22A, RG = 5Ω
899
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
Characteristic / Test Conditions
MIN
TYP
MAX
26
Continuous Source Current (Body Diode)
(Body Diode)
104
Diode Forward Voltage
2
(VGS = 0V, IS = -26A)
1.3
Volts
10
V/ns
dv/
dt
5
Reverse Recovery Time
(IS = -26A, di/dt = 100A/µs)
Tj = 25°C
320
Tj = 125°C
650
Q rr
Reverse Recovery Charge
(IS = -26A, di/dt = 100A/µs)
Tj = 25°C
3.60
Tj = 125°C
9.72
IRRM
Peak Recovery Current
(IS = -26A, di/dt = 100A/µs)
Tj = 25°C
16.5
Tj = 125°C
24.7
t rr
Amps
Pulsed Source Current
1
Peak Diode Recovery
dt
UNIT
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.18
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.16
0.7
0.12
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7177 Rev A
11-2003
0.20
0.3
0.04
t1
t2
SINGLE PULSE
Duty Factor D = t1/t2
0.1
Peak TJ = PDM x ZθJC + TC
0.05
10-5
10-4
10-3
°C/W
4 Starting Tj = +25°C, L = 8.88mH, RG = 25Ω, Peak IL = 26A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -26A di/dt ≤ 700A/µs VR ≤ 1100 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
UNIT
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT11044B2FLL - LFLL
50
RC MODEL
0.0271
Power
(watts)
0.0656
0.0859
7V
45
0.00899F
0.0202F
0.293F
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
VGS =15 & 10V
40
6.5V
35
30
25
6V
20
15
10
5.5V
5
Case temperature. (°C)
5V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
50
TJ = -55°C
40
30
TJ = +25°C
20
TJ = +125°C
10
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
25
20
15
10
5
0
25
GS
1.30
VGS=10V
1.20
1.10
1.00
VGS=20V
0.90
0.80
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
3
I
D
V
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 13A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
0
-50
NORMALIZED TO
V
= 10V @ 13A
1.15
30
2.5
1.40
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
11-2003
60
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
050-7177 Rev A
ID, DRAIN CURRENT (AMPERES)
70
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
APT11044B2FLL - LFLL
20,000
OPERATION HERE
LIMITED BY RDS (ON)
10,000
50
100µS
10
5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
1
10
100
1100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
D
VDS= 220V
VDS= 550V
8
Coss
VDS= 880V
4
0
0
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
10mS
= 22A
12
1,000
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
I
C, CAPACITANCE (pF)
Ciss
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
104
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
90
300
80
td(off)
250
70
V
DD
R
G
60
= 733V
tr and tf (ns)
td(on) and td(off) (ns)
V
200
= 5Ω
T = 125°C
J
150
L = 100µH
= 733V
DD
R
G
tf
= 5Ω
T = 125°C
J
50
L = 100µH
40
30
100
20
tr
50
10
td(on)
0
0
0
3000
5
15
20
25
30
35
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
050-7177 Rev A
0
15
20
25
30
35
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
V
DD
I
D
5000
T = 125°C
J
L = 100µH
E ON includes
2000
5
10
6000
= 733V
= 5Ω
diode reverse recovery.
1500
Eon
1000
Eoff
500
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
11-2003
2500
10
= 733V
= 22A
T = 125°C
J
L = 100µH
EON includes
4000
Eoff
diode reverse recovery.
3000
Eon
2000
1000
0
0
0
5
10
15
20
25
30
35
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
10 %
APT11044B2FLL - LFLL
90%
Gate Voltage
Gate Voltage
T = 125 C
J
td(off)
T = 125 C
J
td(on)
90%
Drain Voltage
tr
90%
5%
Drain Current
t
f
5%
10 %
10%
0
Drain Voltage
Switching Energy
Switching Energy
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF120
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
11-2003
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7177 Rev A
Drain
Drain
20.80 (.819)
21.46 (.845)