A Product Line of Diodes Incorporated ZXTD2090E6 DUA L 50V N PN SILICON LOW SATURATION SW ITCH ING TRAN SISTOR Features • • • • • • • • Mechanical Data BVCEO = 50V RSAT = 160mV IC = 1A Continuous Collector Current Low Equivalent On Resistance Low Saturation Voltage SOT23-6 package Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) “Green” Devices (Note 2) • • • • • • Case: SOT23-6 Case material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.018 grams (approximate) Applications • • LCD Backlighting inverter circuits Boost functions in DC-DC converters SOT-223 Top View Device symbol Pin Configuration Ordering Information Product ZXTD2090E6TA Notes: Marking 2090 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc.‘s “Green” Policy can be found on our website at http://www.diodes.com. Marking Information 2090 = Product type Marking Code ZXTD2090E6 Document Number DS31896 Rev. 2 - 2 1 of 6 www.diodes.com August 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD2090E6 DUA L 50V N PN SILICON LOW SATURATION SW ITCH ING TRAN SISTOR Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current (Note 5) Base current Peak Pulse Current Symbol VCBO VCEO VEBO IC IB ICM Value 50 50 5 1 200 2 Unit V V V A mA A Symbol Value 0.90 7.2 1.1 8.8 1.7 13.6 139 73 113 -55 to +150 Unit W mW /°C W mW /°C W mW /°C °C/W °C/W °C/W °C Thermal Characteristics Characteristic Power Dissipation at TA = 25°C (Notes 3 & 6) Linear derating factor Power Dissipation at TA = 25°C (Notes 3 & 7) Linear derating factor Power Dissipation at TA = 25°C (Notes 4 & 6) Linear derating factor Thermal Resistance, Junction to Ambient (Notes 3 & 6) Thermal Resistance, Junction to Ambient (Notes 4 & 6) Thermal Resistance, Junction to Ambient (Notes 3 & 7) Operating and Storage Temperature Range Notes: PD PD PD RθJA RθJA RθJA TJ, TSTG 3. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions 4. For a device surface mounted on FR4 PCB measured at < 5sec 5. Repetitive rating – pulse width limited by maximum junction temperature. Refer to transient thermal impedance graph 6. For a device with one active die 7. For a device with two die running at equal power ZXTD2090E6 Document Number DS31896 Rev. 2 - 2 2 of 6 www.diodes.com August 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD2090E6 DUA L 50V N PN SILICON LOW SATURATION SW ITCH ING TRAN SISTOR Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 8) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter Cutoff Current DC Current Gain (Note 8) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO Min 50 50 5 200 300 200 75 20 hFE Typ Max 10 10 10 Unit V V V nA nA nA 35 80 200 270 mV mV mV mV 1100 1100 mV mV pF 420 450 350 130 60 Test Condition IC = 100µA IC = 10mA IE = 100µA VCB = 40V VCES = 40V VEB = 4V IC = 10mA, VCE = 2V IC = 100mA, VCE = 2V IC = 500mA, VCE = 2V IC = 1A, VCE = 2V IC = 1.5A, VCE = 2V IC = 100mA, IB = 10mA IC = 250mA, IB = 10mA IC = 500mA, IB = 10mA IC = 1A, IB = 50mA IC = 1A, IB = 50mA IC = 1A, VCE = 2V VCB = 10V. f = 1MHz VCE = 10V, IC = 50mA f = 100MHz Collector-Emitter Saturation Voltage (Note 8) VCE(SAT) 24 60 120 160 Base-Emitter Saturation Voltage (Note 8) Base-Emitter Turn-On Voltage (Note 8) Output Capacitance VBE(sat) VBE(ON) Cobo 940 850 10 Current Gain-Bandwidth Product fT 215 MHz Turn-On Time ton 150 ns VCC = 10V, IC = 1A Turn-Off Time toff 425 ns IB1 = -IB2 = 100mA Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2% ZXTD2090E6 Document Number DS31896 Rev. 2 - 2 3 of 6 www.diodes.com August 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD2090E6 DUA L 50V N PN SILICON LOW SATURATION SW ITCH ING TRAN SISTOR Typical Characteristics ZXTD2090E6 Document Number DS31896 Rev. 2 - 2 4 of 6 www.diodes.com August 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD2090E6 DUA L 50V N PN SILICON LOW SATURATION SW ITCH ING TRAN SISTOR Package Outline Dimensions Suggested Pad Layout ZXTD2090E6 Document Number DS31896 Rev. 2 - 2 5 of 6 www.diodes.com August 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD2090E6 DUA L 50V N PN SILICON LOW SATURATION SW ITCH ING TRAN SISTOR IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. B. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com ZXTD2090E6 Document Number DS31896 Rev. 2 - 2 6 of 6 www.diodes.com August 2009 © Diodes Incorporated