MSRTA20060(A)D thru MSRTA200100(A)D Silicon Standard Recovery Diode VRRM = 600 V - 1000 V IF(AV) = 200 A Features • High Surge Capability • Types from 600 V to 1000 V VRRM Heavy Three Tower Package • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive p p peak reverse voltage g VRRM DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg Conditions MSRTA20060(A)D MSRTA20080(A)D MSRTA200100(A)D Unit 600 800 1000 V 600 -55 to 150 -55 to 150 800 -55 to 150 -55 to 150 1000 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified MSRTA20060(A)D MSRTA20080(A)D MSRTA200100(A)D Symbol Conditions Average forward current (per leg) IF(AV) TC = 125 °C 200 200 200 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 3000 3000 3000 A Maximum instantaneous forward voltage (per leg) VF IFM = 200 A, Tj = 25 °C 1.1 1.1 1.1 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 10 10 10 μA Tj = 150 °C 5 5 5 mA 0.35 0.35 0.35 °C/W Parameter Unit Thermal characteristics Maximum thermal resistance, junction - case (per leg) Feb 2016 RΘjc Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 MSRTA20060(A)D thru MSRTA200100(A)D Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 MSRTA20060(A)D thru MSRTA200100(A)D Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3