STMicroelectronics M48Z129Y 5.0v or 3.3v, 1 mbit (128 kb x 8) zeropower sram Datasheet

M48Z129Y*
M48Z129V
5.0V OR 3.3V, 1 Mbit (128 Kb x 8) ZEROPOWER® SRAM
FEATURES SUMMARY
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■
■
■
■
■
■
■
■
INTEGRATED, ULTRA LOW POWER SRAM,
POWER-FAIL CONTROL CIRCUIT, AND
BATTERY
CONVENTIONAL SRAM OPERATION;
UNLIMITED WRITE CYCLES
10 YEARS OF DATA RETENTION IN THE
ABSENCE OF POWER
MICROPROCESSOR POWER-ON RESET
(RESET VALID EVEN DURING BATTERY
BACK-UP MODE)
BATTERY LOW PIN - PROVIDES WARNING
OF BATTERY END-OF-LIFE
AUTOMATIC POWER-FAIL CHIP
DESELECT AND WRITE PROTECTION
WRITE PROTECT VOLTAGES
(VPFD = Power-fail Deselect Voltage):
– M48Z129Y: VCC = 4.5 to 5.5V
4.2V ≤ VPFD ≤ 4.5V
– M48Z129V: VCC = 3.0 to 3.6V
2.7V ≤ VPFD ≤ 3.0V
SELF-CONTAINED BATTERY IN THE
CAPHAT™ DIP PACKAGE
PIN AND FUNCTION COMPATIBLE WITH
JEDEC STANDARD 128K x 8 SRAMs
Figure 1. 32-pin PMDIP Module
32
1
PMDIP32 (PM)
Module
* Contact local ST sales office for availability.
March 2005
1/16
M48Z129Y*, M48Z129V
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 1. 32-pin PMDIP Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 2.
Table 1.
Figure 3.
Figure 4.
Logic Diagram . .
Signal Names . .
DIP Connections
Block Diagram . .
...................
...................
...................
...................
.......
.......
.......
.......
......
......
......
......
.......
.......
.......
.......
......
......
......
......
......
......
......
......
.....4
.....4
.....4
.....5
OPERATION MODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 2. Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
READ Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 5. Address Controlled, READ Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 6. Chip Enable or Output Enable Controlled, READ Mode AC Waveforms . . . . . . . . . . . . . 6
Table 3. READ Mode AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
WRITE Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 7. WRITE Enable Controlled, WRITE Mode AC Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 8. Chip Enable Controlled, WRITE Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 4. WRITE Mode AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Data Retention Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
VCC Noise And Negative Going Transients. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 9. Supply Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 6. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 10.AC Testing Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 7. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 8. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 11.Power Down/Up Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 9. Power Down/Up AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 10. Power Down/Up Trip Points DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
PACKAGE MECHANICAL INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 12.PMDIP32 – 32-pin Plastic Module DIP, Package Outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 11. PMDIP32 – 32-pin Plastic DIP, Package Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . 13
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 12. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
M48Z129Y*, M48Z129V
Table 13. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3/16
M48Z129Y*, M48Z129V
SUMMARY DESCRIPTION
The M48Z129Y/V ZEROPOWER® SRAM is a
1,048,576 bit non-volatile static RAM organized as
131,072 words by 8 bits. The device combines an
internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The
M48Z129Y/V directly replaces industry standard
128K x 8 SRAM. It also provides the non-volatility
of FLASH without any requirement for special
WRITE timing or limitations on the number of
WRITEs that can be performed.
Figure 2. Logic Diagram
Table 1. Signal Names
A0-A16
VCC
DQ0-DQ7
17
8
A0-A16
W
Data Inputs / Outputs
E
Chip Enable
G
Output Enable
W
WRITE Enable
DQ0-DQ7
M48Z129Y
M48Z129V
E
RST
BL
RST
Reset Output (Open Drain)
Battery Low Output (Open Drain)
BL
G
VSS
VCC
Supply Voltage
VSS
Ground
AI02309
Figure 3. DIP Connections
RST
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
32
2
31
3
30
4
29
28
5
27
6
7
26
8 M48Z129Y 25
9 M48Z129V 24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
AI02310
4/16
Address Inputs
VCC
A15
BL
W
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
M48Z129Y*, M48Z129V
Figure 4. Block Diagram
VCC
A0-A16
POWER
E
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
131,072 x 8
SRAM ARRAY
E
DQ0-DQ7
W
G
INTERNAL
BATTERY
RST
VSS
BL
AI03608
OPERATION MODES
The M48Z129Y/V also has its own Power-Fail Detect circuit. This control circuitry constantly monitors the supply voltage for an out of tolerance
condition. When VCC is out of tolerance, the circuit
write protects the SRAM, providing data security in
the midst of unpredictable system operation. As
VCC falls, the control circuitry automatically switches to the battery, maintaining data until valid power
is restored.
Table 2. Operating Modes
Mode
VCC
Deselect
WRITE
READ
4.5 to 5.5V
or
3.0to 3.6V
READ
E
G
W
DQ0-DQ7
Power
VIH
X
X
High Z
Standby
VIL
X
VIL
DIN
Active
VIL
VIL
VIH
DOUT
Active
VIL
VIH
VIH
High Z
Active
Deselect
VSO to VPFD (min)(1)
X
X
X
High Z
CMOS Standby
Deselect
≤ VSO(1)
X
X
X
High Z
Battery Back-up Mode
Note: X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.
1. See Table 10., page 12 for details.
5/16
M48Z129Y*, M48Z129V
READ Mode
The M48Z129Y/V is in the READ Mode whenever
W (WRITE Enable) is high and E (Chip Enable) is
low. The unique address specified by the 17 address inputs defines which one of the 131,072
bytes of data is to be accessed. Valid data will be
available at the Data I/O pins within tAVQV (Address Access Time) after the last address input
signal is stable, providing the E and G access
times are also satisfied. If the E and G access
times are not met, valid data will be available after
the latter of the Chip Enable Access Times (tELQV)
or Output Enable Access Time (tGLQV).
The state of the eight three-state Data I/O signals
is controlled by E and G. If the outputs are activated before tAVQV, the data lines will be driven to an
indeterminate state until tAVQV. If the Address Inputs are changed while E and G remain active,
output data will remain valid for tAXQX (Output
Data Hold Time) but will go indeterminate until the
next Address Access.
Figure 5. Address Controlled, READ Mode AC Waveforms
tAVAV
VALID
A0-A16
tAVQV
tAXQX
DQ0-DQ7
DATA VALID
DATA VALID
AI02324
Note: Chip Enable (E) and Output Enable (G) = Low, WRITE Enable (W) = High.
Figure 6. Chip Enable or Output Enable Controlled, READ Mode AC Waveforms
tAVAV
A0-A16
VALID
tAVQV
tAXQX
tELQV
tEHQZ
E
tELQX
tGLQV
tGHQZ
G
tGLQX
DQ0-DQ7
DATA OUT
AI01197
6/16
M48Z129Y*, M48Z129V
Table 3. READ Mode AC Characteristics
M48Z129Y
M48Z129V
–70
–85
(1)
Symbol
Parameter
Min
Max
Min
Unit
Max
tAVAV
READ Cycle Time
tAVQV
Address Valid to Output Valid
70
85
ns
tELQV
Chip Enable Low to Output Valid
70
85
ns
tGLQV
Output Enable Low to Output Valid
35
45
ns
70
85
ns
tELQX(2)
Chip Enable Low to Output Transition
5
5
ns
tGLQX(2)
Output Enable Low to Output Transition
3
5
ns
tEHQZ(2)
Chip Enable High to Output Hi-Z
30
40
ns
tGHQZ(2)
Output Enable High to Output Hi-Z
20
25
ns
tAXQX
Address Transition to Output Transition
5
5
ns
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. CL = 5pF (see Figure 10., page 11).
WRITE Mode
able prior to the initiation of another READ or
WRITE cycle. Data-in must be valid tDVWH prior to
the end of WRITE and remain valid for tWHDX afterward. G should be kept high during WRITE cycles
to avoid bus contention; although, if the output bus
has been activated by a low on E and G a low on
W will disable the outputs tWLQZ after W falls.
The M48Z129Y/V is in the WRITE Mode whenever
W (WRITE Enable) and E (Chip Enable) are active. The start of a WRITE is referenced from the
latter occurring falling edge of W or E. A WRITE is
terminated by the earlier rising edge of W or E.
The addresses must be held valid throughout the
cycle. E or W must return high for a minimum of
tEHAX from Chip Enable or tWHAX from WRITE En-
Figure 7. WRITE Enable Controlled, WRITE Mode AC Waveform
tAVAV
VALID
A0-A16
tAVWH
tAVEL
tWHAX
E
tWLWH
tAVWL
W
tWHQX
tWLQZ
tWHDX
DQ0-DQ7
DATA INPUT
tDVWH
AI02382
7/16
M48Z129Y*, M48Z129V
Figure 8. Chip Enable Controlled, WRITE Mode AC Waveforms
tAVAV
VALID
A0-A16
tAVEH
tAVEL
tELEH
tEHAX
E
tWLWH
tAVWL
W
tEHDX
tDVEH
DQ0-DQ7
DATA INPUT
AI03611
Table 4. WRITE Mode AC Characteristics
Symbol
M48Z129Y
M48Z129V
–70
–85
Parameter(1)
Min
Max
Min
Unit
Max
tAVAV
WRITE Cycle Time
70
85
ns
tAVWL
Address Valid to WRITE Enable Low
0
0
ns
tAVEL
Address Valid to Chip Enable Low
0
0
ns
tWLWH
WRITE Enable Pulse Width
55
65
ns
tELEH
Chip Enable Low to Chip Enable High
55
75
ns
tWHAX
WRITE Enable High to Address Transition
5
5
ns
tEHAX
Chip Enable High to Address Transition
15
15
ns
tDVWH
Input Valid to WRITE Enable High
30
35
ns
tDVEH
Input Valid to Chip Enable High
30
35
ns
tWHDX
WRITE Enable High to Input Transition
0
0
ns
tEHDX
Chip Enable High to Input Transition
10
15
ns
tWLQZ(2,3)
WRITE Enable Low to Output Hi-Z
25
30
tAVWH
Address Valid to WRITE Enable High
65
75
ns
tAVEH
Address Valid to Chip Enable High
65
75
ns
WRITE Enable High to Output Transition
5
5
ns
tWHQX(2,3)
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. CL = 5pF (see Figure 10., page 11).
3. If E goes low simultaneously with W going low, the outputs remain in the high impedance state.
8/16
ns
M48Z129Y*, M48Z129V
Data Retention Mode
With valid VCC applied, the M48Z129Y/V operates
as a conventional BYTEWIDE™ static RAM.
Should the supply voltage decay, the RAM will automatically deselect, write protecting itself when
VCC falls between VPFD (max), VPFD (min) window. All outputs become high impedance and all
inputs are treated as “Don’t care”.
Note: A power failure during a WRITE cycle may
corrupt data at the current addressed location, but
does not jeopardize the rest of the RAM’s content.
At voltages below VPFD(min), the memory will be
in a write protected state, provided the VCC fall
time is not less than tF. The M48Z129Y/V may respond to transient noise spikes on VCC that cross
into the deselect window during the time the device is sampling VCC. Therefore, decoupling of the
power supply lines is recommended.
When VCC drops below VSO , the control circuit
switches power to the internal battery, preserving
data. The internal energy source will maintain data
in the M48Z129Y/V for an accumulated period of
at least 10 years at room temperature. As system
power rises above VSO, the battery is disconnected, and the power supply is switched to external
VCC. Deselect continues for tREC after VCC reaches VPFD(max).
For more information on Battery Storage Life refer
to the Application Note AN1012.
VCC Noise And Negative Going Transients
ICC transients, including those produced by output
switching, can produce voltage fluctuations, resulting in spikes on the VCC bus. These transients
can be reduced if capacitors are used to store energy which stabilizes the VCC bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (as shown in Figure
9.) is recommended in order to provide the needed
filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate negative voltage spikes on VCC that drive it to values
below VSS by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to connect a schottky diode from VCC to VSS (cathode
connected to VCC, anode to VSS). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
Figure 9. Supply Voltage Protection
VCC
VCC
0.1µF
DEVICE
VSS
AI02169
9/16
M48Z129Y*, M48Z129V
MAXIMUM RATING
Stressing the device above the rating listed in the
“Absolute Maximum Ratings” table may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability.
Refer
also
to
the
STMicroelectronics SURE Program and other relevant quality documents.
Table 5. Absolute Maximum Ratings
Symbol
TA
TSTG
TSLD(1)
Parameter
Ambient Operating Temperature
Storage Temperature (VCC Off, Oscillator Off)
Lead Solder Temperature for 10 seconds
Value
Unit
0 to 70
°C
–40 to 85
°C
260
°C
VIO
Input or Output Voltages
–0.3 to 7
V
VCC
Supply Voltage
–0.3 to 7
V
IO
Output Current
20
mA
PD
Power Dissipation
1
W
Note: 1. Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds).
No preheat above 150°C, or direct exposure to IR reflow (or IR preheat) allowed, to avoid damaging the Lithium battery.
CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. Designers should check that the operating conditions
in their projects match the measurement conditions when using the quoted parameters.
Table 6. Operating and AC Measurement Conditions
Parameter
M48Z129Y
M48Z129V
Unit
4.5 to 5.5
3.0 to 3.6
V
0 to 70
0 to 70
°C
Load Capacitance (CL)
100
50
pF
Input Rise and Fall Times
≤5
≤5
ns
0 to 3
0 to 3
V
1.5
1.5
V
Supply Voltage (VCC)
Ambient Operating Temperature (TA)
Input Pulse Voltages
Input and Output Timing Ref. Voltages
Note: Output Hi-Z is defined as the point where data is no longer driven.
10/16
M48Z129Y*, M48Z129V
Figure 10. AC Testing Load Circuit
650Ω
DEVICE
UNDER
TEST
1.75V
CL = 100pF
or 50pF(1)
CL includes JIG capacitance
AI03630
Note: 1. 50pF for M48Z129V (3.3V).
Table 7. Capacitance
Parameter(1,2)
Symbol
CIN
CIO(3)
Min
Max
Unit
Input Capacitance
10
pF
Input / Output Capacitance
10
pF
Note: 1. Effective capacitance measured with power supply at 5V; sampled only, not 100% tested.
2. At 25°C, f = 1MHz.
3. Outputs deselected.
Table 8. DC Characteristics
Sym
Parameter
M48Z129Y
M48Z129V
–70
–85
Test Condition(1)
Min
ILI
ILO(2)
Input Leakage Current
Output Leakage Current
Max
Min
Unit
Max
0V ≤ VIN ≤ VCC
±1
±1
µA
0V ≤ VOUT ≤ VCC
±1
±1
µA
Outputs open
95
50
mA
E = VIH
7
4
mA
E = VCC – 0.2V
4
3
mA
ICC
Supply Current
ICC1
Supply Current (Standby) TTL
ICC2
Supply Current (Standby) CMOS
VIL
Input Low Voltage
–0.3
0.8
–0.3
0.6
V
VIH
Input High Voltage
2.2
VCC + 0.3
2.2
VCC + 0.3
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V
VOH
Output High Voltage
IOH = –1mA
0.4
2.4
2.2
V
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. Outputs deselected.
11/16
M48Z129Y*, M48Z129V
Figure 11. Power Down/Up Mode AC Waveforms
VCC
VPFD (max)
VPFD (min)
VSO
tF
tR
tDR
tFB
tRB
tREC
tWPT
E
DON'T CARE
RECOGNIZED
RECOGNIZED
HIGH-Z
OUTPUTS
VALID
VALID
(PER CONTROL INPUT)
(PER CONTROL INPUT)
RST
AI03610
Table 9. Power Down/Up AC Characteristics
Parameter(1)
Symbol
tF(2)
VPFD (max) to VPFD (min) VCC Fall Time
tFB(3)
VPFD (min) to VSS VCC Fall Time
Min
Max
300
M48Z129Y
10
M48Z129V
150
Unit
µs
µs
tR
VPFD (min) to VPFD (max) VCC Rise Time
10
µs
tRB
VSS to VPFD (min) VCC Rise Time
1
µs
tWPT
Write Protect Time
tREC
VPFD (max) to RST High
M48Z129Y
40
150
M48Z129V
40
250
40
200
µs
ms
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC passes VPFD (min).
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
Table 10. Power Down/Up Trip Points DC Characteristics
Symbol
Parameter(1,2)
VPFD
Power-fail Deselect Voltage
VSO
Battery Back-up Switchover Voltage
tDR(3)
Expected Data Retention Time
Min
Typ
Max
Unit
M48Z129Y
4.2
4.35
4.5
V
M48Z129V
2.7
2.9
3.0
V
M48Z129Y
3.0
V
M48Z129V
2.45
V
10
Note: 1. All voltages referenced to VSS.
2. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
3. At 25°C, VCC = 0V.
12/16
YEARS
M48Z129Y*, M48Z129V
PACKAGE MECHANICAL INFORMATION
Figure 12. PMDIP32 – 32-pin Plastic Module DIP, Package Outline
A
A1
B
S
L
C
eA
e1
e3
D
N
E
1
PMDIP
Note: Drawing is not to scale.
Table 11. PMDIP32 – 32-pin Plastic DIP, Package Mechanical Data
mm
inches
Symb
Typ
Min
Max
A
9.27
A1
Typ
Min
Max
9.52
0.365
0.375
0.38
–
0.015
–
B
0.43
0.59
0.017
0.023
C
0.20
0.33
0.008
0.013
D
42.42
43.18
1.670
1.700
E
18.03
18.80
0.710
0.740
e1
2.29
2.79
0.090
0.110
e3
34.29
41.91
1.350
1.650
eA
14.99
16.00
0.590
0.630
L
3.05
3.81
0.120
0.150
S
1.91
2.79
0.075
0.110
N
32
32
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M48Z129Y*, M48Z129V
PART NUMBERING
Table 12. Ordering Information Scheme
Example:
M48Z
129Y
–70
PM
1
TR
Device Type
M48Z
Supply Voltage and Write Protect Voltage
129Y(1) = VCC = 4.5 to 5.5V; 4.2V ≤ VPFD ≤ 4.5V
129V = VCC = 3.0 to 3.6V; 2.7V ≤ VPFD ≤ 3.0V
Speed
–70 = 70ns (M48Z129Y)
–85 = 85ns (M48Z129V)
Package
PM = PMDIP32
Temperature Range
1 = 0 to 70°C
Shipping Method
blank = Tubes
TR = Tape & Reel
Note: 1. Contact Local Sales Office
For other options, or for more information on any aspect of this device, please contact the ST Sales Office
nearest you.
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M48Z129Y*, M48Z129V
REVISION HISTORY
Table 13. Document Revision History
Date
Version
Revision Details
December 1999
1.0
First Issue
30-Mar-00
2.0
From Preliminary Data to Data Sheet
20-Jun-00
2.1
tGLQX changed for M48Z129Y (Table 3)
14-Sep-01
3.0
Reformatted; Temperature information added to tables (Table 7, 8, 3, 4, 9, 10)
29-May-02
3.1
Add countries to disclaimer
02-Apr-03
4.0
v2.2 template applied; test condition updated (Table 10)
18-Feb-05
5.0
Reformatted; IR reflow update (Table 5)
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M48Z129Y*, M48Z129V
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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