IXTA180N10T IXTP180N10T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 100V = 180A Ω ≤ 6.4mΩ TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSM Transient ± 30 V ID25 ILRMS IDM TC = 25°C Lead Current limit, RMS TC = 25°C, pulse width limited by TJM 180 75 450 A A A IAR EAS TC = 25°C TC = 25°C 25 750 A mJ PD TC = 25°C 480 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 2.5 3.0 g g S Maximum Ratings TJ TJM Tstg TL TSOLD 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-263 TO-220 (TAB) TO-220 (IXTP) G D S G = Gate S = Source (TAB) D = Drain TAB = Drain Features z z z z Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages z z z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 100 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) Applications V 4.5 z V ± 100 nA 5 μA 100 μA TJ = 150°C VGS = 10V, ID = 25A, Notes 1, 2 5.7 6.4 mΩ z z z z z z © 2008 IXYS CORPORATION, All rights reserved Easy to mount Space savings High power density Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier DS99651A(3/08) IXTA180N10T IXTP180N10T Symbol Test Conditions Characteristic Values TO-263 (IXTA) Outline (TJ = 25°C unless otherwise specified) Min. Typ. gfs 70 110 S 6900 pF 923 pF 162 pF 33 ns 54 ns 42 ns 31 ns 151 nC 39 nC Dim. Millimeter Min. Max. Inches Min. Max. 45 nC A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 0.31 °C/W b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 VDS= 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 25A RG = 3.3Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgd RthJC RthCH TO-220 Max. °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 180 A ISM Repetitive, pulse width limited by TJM 450 A VSD IF = 25A, VGS = 0V, Note 1 0.95 V trr IF = 90A, VGS = 0V IRM QRM -di/dt = 100A/μs VR = 0.5 • VDSS 72 ns 5.1 A 0.18 μC Pins: 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain TO-220 (IXTP) Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA180N10T IXTP180N10T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 180 300 VGS = 10V 9V 8V 160 250 140 225 120 100 ID - Amperes ID - Amperes VGS = 10V 9V 8V 275 7V 80 60 200 175 7V 150 125 100 6V 40 75 50 20 6V 25 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 Fig. 3. Output Characteristics @ 150ºC 6 7 2.8 VGS = 10V 9V 8V VGS = 10V 2.6 2.4 RDS(on) - Normalized 140 ID - Amperes 5 Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature 180 160 4 VDS - Volts VDS - Volts 7V 120 100 80 6V 60 2.2 2.0 I D = 180A 1.8 1.6 I D = 90A 1.4 1.2 1.0 40 0.8 20 5V 0.6 0 0.4 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current 90 2.8 80 TJ = 175ºC 75 100 125 150 175 External Lead Current Limit 70 2.4 2.2 ID - Amperes RDS(on) - Normalized 2.6 2.0 VGS = 10V 15V - - - - 1.6 50 Fig. 6. Drain Current vs. Case Temperature 3.0 1.8 25 TJ - Degrees Centigrade VDS - Volts 60 50 40 30 1.4 TJ = 25ºC 1.2 20 1.0 10 0.8 0 0.6 0 50 100 150 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA180N10T IXTP180N10T Fig. 8. Transconductance 225 150 200 135 175 120 150 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 125 100 TJ = 150ºC 25ºC - 40ºC 75 TJ = - 40ºC 25ºC 105 90 75 150ºC 60 45 50 30 25 15 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 25 50 75 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 150 175 200 225 250 10 250 9 225 8 200 7 175 VGS - Volts IS - Amperes 125 Fig. 10. Gate Charge 275 150 125 VDS = 50V I D = 25A I G = 10mA 6 5 4 100 3 75 TJ = 150ºC 2 50 TJ = 25ºC 25 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 VSD - Volts 40 60 80 100 120 140 160 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000.0 100,000 f = 1 MHz 100µs RDS(on) Limit 25µs 1ms 10ms 100.0 Ciss 10,000 I D - Amperes Capacitance - PicoFarads 100 ID - Amperes Coss 1,000 10.0 DC, 100ms 1.0 TJ = 175ºC TC = 25ºC Single Pulse Crss 100 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 VDS - Volts 100 IXTA180N10T IXTP180N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 70 65 RG = 3.3Ω 65 60 VGS = 10V 60 55 VDS = 50V 55 t r - Nanoseconds t r - Nanoseconds 70 50 45 40 I 35 D = 50A 30 25 I D TJ = 25ºC 50 45 RG = 3.3Ω 40 VGS = 10V 35 VDS = 50V 30 25 = 25A 20 20 15 15 10 TJ = 125ºC 10 25 35 45 55 65 75 85 95 105 115 125 24 26 28 30 32 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 75 tr td(on) - - - - 70 37 55 50 I D = 25A 49 32 46 35 31 30 30 14 16 18 35 45 RG - Ohms 64 t f - Nanoseconds td(off) - - - - 55 RG = 3.3Ω, VGS = 10V 52 VDS = 50V 33 49 32 46 TJ = 25ºC 31 30 35 95 105 115 40 125 40 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 45 50 td(off) - - - 220 TJ = 125ºC, VGS = 10V VDS = 50V 120 190 100 160 25A < I D < 50A 80 I D 130 = 25A, 50A 60 100 43 40 70 40 20 40 2 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 58 140 t d(off) - Nanoseconds 36 30 85 250 tf 61 TJ = 125ºC 25 75 160 t f - Nanoseconds 37 34 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 38 35 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 43 I D = 25A, 50A 25 20 58 33 20 0 61 25A < I D < 50A RG = 3.3Ω, VGS = 10V 52 40 12 50 td(off) - - - - 34 40 10 48 55 45 8 46 35 60 6 44 VDS = 50V 36 t f - Nanoseconds t r - Nanoseconds 100 4 42 t d(off) - Nanoseconds 60 t d(on) - Nanoseconds I D = 50A 120 80 40 64 tf 65 VDS = 50V 38 38 TJ = 125ºC, VGS = 10V 140 36 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 180 160 34 ID - Amperes IXTA180N10T IXTP180N10T Fig. 19. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_180N10T(61) 2-02-07-B