isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF742 DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage: VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±20 V 8 A 125 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ MAX UNIT ID Ptot Tj Tstg Drain Current-continuous@ TC=25℃ Total Dissipation@TC=25℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF742 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance IGSS MIN MAX UNIT 350 4 V VGS= 10V; ID= 5.2A 0.8 Ω Gate Source Leakage Current VGS= ±20V; VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 350V; VGS= 0 250 uA VSD Diode Forward Voltage IF= 10A; VGS= 0 2.0 V isc website：www.iscsemi.cn PDF pdfFactory Pro 2 2 V isc & iscsemi is registered trademark www.fineprint.cn