Ordering number : EN9000A MCH3383 P-Channel Power MOSFET http://onsemi.com –12V, –3.5A, 69mΩ, Single MCPH3 Features • • • • ON-resistance RDS(on)1=57mΩ (typ.) 0.9V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --12 V ±5 V --3.5 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch Operating Temperature Topr --5 to +150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) --14 A 1.0 W 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7019A-003 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel MCH3383-TL-H 0.15 0.25 2.0 Packing Type : TL 1.6 2.1 0 to 0.02 QQ LOT No. LOT No. 3 Marking TL 0.65 2 Electrical Connection 0.3 3 0.07 0.85 0.25 1 1 : Gate 2 : Source 3 : Drain 1 MCPH3 2 Semiconductor Components Industries, LLC, 2013 July, 2013 53012TKIM/62211PE TKIM TC-00002604 No.9000-1/7 MCH3383 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--12V, VGS=0V IGSS VGS(off) | yfs | VGS=±4V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--1.5A RDS(on)1 RDS(on)2 ID=--1.5A, VGS=--2.5V ID=--0.7A, VGS=--1.8V ID=--0.3A, VGS=--1.2V RDS(on)3 RDS(on)4 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Ratings min typ max --12 V --0.3 --10 μA ±10 μA --0.8 5.3 ID=--50mA, VGS=--0.9V VDS=--6V, f=1MHz Unit V S 57 69 mΩ 75 98 mΩ 115 173 mΩ 250 500 mΩ 1010 pF VDS=--6V, f=1MHz VDS=--6V, f=1MHz 130 pF 85 pF See specified Test Circuit. 9.9 ns Rise Time td(on) tr See specified Test Circuit. 49 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 109 ns Fall Time tf Qg See specified Test Circuit. 65 ns VDS=--6V, VGS=--2.5V, ID=--3.5A VDS=--6V, VGS=--2.5V, ID=--3.5A 6.2 nC 1.6 nC Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, VGS=--2.5V, ID=--3.5A IS=--3.5A, VGS=0V 1.1 --0.83 nC --1.2 V Switching Time Test Circuit 0V --2.5V VDD= --6V VIN ID= --1.5A RL=4Ω VOUT VIN D PW=10μs D.C.≤1% G P.G 50Ω MCH3383 S Ordering Information Device MCH3383-TL-H Package Shipping memo MCPH3 3,000pcs./reel Pb Free and Halogen Free No.9000-2/7 MCH3383 ID -- VDS V --2.0 --1.5 --1.0V --1.0 --0.9V VGS= --0.8V --0.5 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --1.5A 250 200 150 100 50 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IT16290 RDS(on) -- Ta --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 200 150 3A 2V, I D= --0. V GS= --1. , I = --0.7A VGS= --1.8V D 100 = --1.5A VGS= --2.5V, ID 50 0 --25 --5.0 VGS= --0.9V, I = --5 0mA D 250 0 25 | yfs | -- ID 50 75 100 125 150 Ambient Temperature, Ta -- °C IT16291 5 175 IT16292 IS -- VSD --10 7 5 VDS= --10V VGS=0V 3 2 1.0 7 5 3 2 --1.0 7 5 3 5°C = Ta 2 --0.1 7 5 25°C °C 25 °C 75 3 Ta= 7 0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S --0.2 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.7A 300 Gate-to-Source Voltage, VGS -- V 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A RDS(on) -- ID 500 5 7 --10 IT16293 --0.01 400 VGS= --0.9V 300 250 200 150 --1.2V 100 --1.8V 50 0 --0.01 --2.5V 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A --0.2 --0.4 2 3 5 7 --10 IT16295 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 IT16294 SW Time -- ID 1000 7 5 450 350 0 Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 300 --0.3A 350 7 0 --0.9 --1.0 ID= --50mA 400 10 --1 Ta=25°C 450 0 --2 IT16289 RDS(on) -- VGS 500 --3 Ta= 75° C 25° C --2.5 0 VDS= --10V --1 .4 --1.2V --3.0 0 ID -- VGS --4 Drain Current, ID -- A Drain Current, ID -- A --3.5 --2.5 V --1. 8V --4.5V --4.0 VDD= --6V VGS= --2.5V 3 2 td(off) 100 7 5 tf tr 3 2 td(on) 10 7 5 3 2 1.0 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT16296 No.9000-3/7 MCH3383 Ciss, Coss, Crss -- VDS 10000 7 5 Gate-to-Source Voltage, VGS -- V 3 Ciss, Coss, Crss -- pF 2 Ciss 1000 7 5 3 2 Coss Crss 100 7 5 3 2 10 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP= --14A (PW≤10μs) ID= --3.5A DC --1.0 --0.5 0 1 2 1m 100 μs s op 10 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT16299 3 4 5 Total Gate Charge, Qg -- nC PD -- Ta 1.2 is limited by RDS(on). 5 7--0.1 2 3 --1.5 IT16297 ms era 100 tio ms n( Ta =2 5° C) Operation in this area --0.01 --0.01 2 3 VDS= --6V ID= --3.5A --2.0 0 --12 Allowable Power Dissipation, PD -- W Drain Current, ID -- A --100 7 5 3 2 VGS -- Qg --2.5 f=1MHz 6 7 IT16298 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16300 No.9000-4/7 MCH3383 Taping Specification MCH3383-TL-H No.9000-5/7 MCH3383 Outline Drawing MCH3383-TL-H Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.9000-6/7 MCH3383 Note on usage : Since the MCH3383 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.9000-7/7