ON MCH3383-TL-H P-channel power mosfet â 12v, â 3.5a, 69mî©, single mcph3 Datasheet

Ordering number : EN9000A
MCH3383
P-Channel Power MOSFET
http://onsemi.com
–12V, –3.5A, 69mΩ, Single MCPH3
Features
•
•
•
•
ON-resistance RDS(on)1=57mΩ (typ.)
0.9V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
--12
V
±5
V
--3.5
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
Operating Temperature
Topr
--5 to +150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm)
--14
A
1.0
W
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7019A-003
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
MCH3383-TL-H
0.15
0.25
2.0
Packing Type : TL
1.6
2.1
0 to 0.02
QQ
LOT No.
LOT No.
3
Marking
TL
0.65
2
Electrical Connection
0.3
3
0.07
0.85
0.25
1
1 : Gate
2 : Source
3 : Drain
1
MCPH3
2
Semiconductor Components Industries, LLC, 2013
July, 2013
53012TKIM/62211PE TKIM TC-00002604 No.9000-1/7
MCH3383
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Conditions
V(BR)DSS
IDSS
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±4V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--1.5A
RDS(on)1
RDS(on)2
ID=--1.5A, VGS=--2.5V
ID=--0.7A, VGS=--1.8V
ID=--0.3A, VGS=--1.2V
RDS(on)3
RDS(on)4
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Ratings
min
typ
max
--12
V
--0.3
--10
μA
±10
μA
--0.8
5.3
ID=--50mA, VGS=--0.9V
VDS=--6V, f=1MHz
Unit
V
S
57
69
mΩ
75
98
mΩ
115
173
mΩ
250
500
mΩ
1010
pF
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
130
pF
85
pF
See specified Test Circuit.
9.9
ns
Rise Time
td(on)
tr
See specified Test Circuit.
49
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
109
ns
Fall Time
tf
Qg
See specified Test Circuit.
65
ns
VDS=--6V, VGS=--2.5V, ID=--3.5A
VDS=--6V, VGS=--2.5V, ID=--3.5A
6.2
nC
1.6
nC
Total Gate Charge
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--6V, VGS=--2.5V, ID=--3.5A
IS=--3.5A, VGS=0V
1.1
--0.83
nC
--1.2
V
Switching Time Test Circuit
0V
--2.5V
VDD= --6V
VIN
ID= --1.5A
RL=4Ω
VOUT
VIN
D
PW=10μs
D.C.≤1%
G
P.G
50Ω
MCH3383
S
Ordering Information
Device
MCH3383-TL-H
Package
Shipping
memo
MCPH3
3,000pcs./reel
Pb Free and Halogen Free
No.9000-2/7
MCH3383
ID -- VDS
V
--2.0
--1.5
--1.0V
--1.0
--0.9V
VGS= --0.8V
--0.5
--0.1 --0.2
--0.3 --0.4 --0.5 --0.6
--0.7 --0.8
Drain-to-Source Voltage, VDS -- V
--1.5A
250
200
150
100
50
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8 --2.0
IT16290
RDS(on) -- Ta
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
200
150
3A
2V, I D= --0.
V GS= --1.
, I = --0.7A
VGS= --1.8V D
100
= --1.5A
VGS= --2.5V, ID
50
0
--25
--5.0
VGS= --0.9V, I = --5
0mA
D
250
0
25
| yfs | -- ID
50
75
100
125
150
Ambient Temperature, Ta -- °C
IT16291
5
175
IT16292
IS -- VSD
--10
7
5
VDS= --10V
VGS=0V
3
2
1.0
7
5
3
2
--1.0
7
5
3
5°C
=
Ta
2
--0.1
7
5
25°C
°C
25
°C
75
3
Ta=
7
0
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
--0.2
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--0.7A
300
Gate-to-Source Voltage, VGS -- V
3
2
2
0.1
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
RDS(on) -- ID
500
5 7 --10
IT16293
--0.01
400
VGS= --0.9V
300
250
200
150
--1.2V
100
--1.8V
50
0
--0.01
--2.5V
2
3
5 7 --0.1
2
3
5 7 --1.0
Drain Current, ID -- A
--0.2
--0.4
2
3
5 7 --10
IT16295
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
IT16294
SW Time -- ID
1000
7
5
450
350
0
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
300
--0.3A
350
7
0
--0.9 --1.0
ID= --50mA
400
10
--1
Ta=25°C
450
0
--2
IT16289
RDS(on) -- VGS
500
--3
Ta=
75°
C
25°
C
--2.5
0
VDS= --10V
--1
.4
--1.2V
--3.0
0
ID -- VGS
--4
Drain Current, ID -- A
Drain Current, ID -- A
--3.5
--2.5
V
--1.
8V
--4.5V
--4.0
VDD= --6V
VGS= --2.5V
3
2
td(off)
100
7
5
tf
tr
3
2
td(on)
10
7
5
3
2
1.0
--0.1
2
3
5
7
--1.0
2
Drain Current, ID -- A
3
5
7
--10
IT16296
No.9000-3/7
MCH3383
Ciss, Coss, Crss -- VDS
10000
7
5
Gate-to-Source Voltage, VGS -- V
3
Ciss, Coss, Crss -- pF
2
Ciss
1000
7
5
3
2
Coss
Crss
100
7
5
3
2
10
0
--2
--4
--6
--8
--10
Drain-to-Source Voltage, VDS -- V
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ASO
IDP= --14A (PW≤10μs)
ID= --3.5A
DC
--1.0
--0.5
0
1
2
1m 100
μs
s
op
10
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
5 7--1.0 2 3
5 7--10
2 3
Drain-to-Source Voltage, VDS -- V
5 7--100
IT16299
3
4
5
Total Gate Charge, Qg -- nC
PD -- Ta
1.2
is limited by RDS(on).
5 7--0.1 2 3
--1.5
IT16297
ms
era 100
tio ms
n(
Ta
=2
5°
C)
Operation in this area
--0.01
--0.01 2 3
VDS= --6V
ID= --3.5A
--2.0
0
--12
Allowable Power Dissipation, PD -- W
Drain Current, ID -- A
--100
7
5
3
2
VGS -- Qg
--2.5
f=1MHz
6
7
IT16298
When mounted on ceramic substrate
(900mm2×0.8mm)
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16300
No.9000-4/7
MCH3383
Taping Specification
MCH3383-TL-H
No.9000-5/7
MCH3383
Outline Drawing
MCH3383-TL-H
Land Pattern Example
Mass (g) Unit
0.007 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No.9000-6/7
MCH3383
Note on usage : Since the MCH3383 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.9000-7/7
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