Jiangsu BD140 To-126 plastic-encapsulate transistor Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD136 / BD138 / BD140
TRANSISTOR (PNP)
FEATURES
z High Current
z Complement To BD135, BD137 And BD139
TO – 126
1. EMITTER
2. COLLECTOR
3. BASE
Equivalent Circuit
BD136
zXXX
BD138
zXXX
BD140
zXXX
BD136,BD138,BD140 'HYLFHFoGH
Solid dot = Green molding compound device,
if none, the normal device
;;; &ode
ORDERING INFORMATION
Part Number
Package
Packing Method
Pack Quantity
BD136
TO-126
Bulk
200pcs/Bag
BD138
TO-126
Bulk
200pcs/Bag
BD140
TO-126
Bulk
200pcs/Bag
BD136-TU
TO-126
Tube
60pcs/Tube
BD138-TU
TO-126
Tube
60pcs/Tube
BD140-TU
TO-126
Tube
60pcs/Tube
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Value
BD136
-45
BD138
-60
BD140
-80
BD136
-45
BD138
-60
BD140
-80
-5
Emitter-Base Voltage
Unit
V
V
V
IC
Collector Current
-1.5
A
PC
Collector Power Dissipation
1.25
W
Thermal Resistance From Junction To Ambient
100
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
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1
D,Aug,2017
Ta =25 Я unless otherwise specified
Parameter
Symbol
Collector-base breakdown voltage
Test
V(BR)CBO
conditions
Min
-45
BD138
-60
Unit
V
-80
VCEO(SUS)*
IC=-0.03A,IB=0
BD136
-45
BD138
-60
BD140
Emitter-base breakdown voltage
Max
IC= -0.1mA,IE=0
BD136
BD140
Collector-emitter sustaining voltage
Typ
V
-80
-5
V(BR)EBO
IE=-0.1mA,IC=0
Collector cut-off current
ICBO
VCB=-30V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-10
μA
*
hFE(1)
*
hFE(2)
hFE(3)*
DC current gain
Collector-emitter saturation voltage
VCE=-2V, IC=-150mA
*
VCE(sat)
VBE
Base-emitter voltage
*
40
VCE=-2V, IC=-5mA
25
VCE=-2V, IC=-500mA
25
V
250
IC=-500mA,IB=-50mA
-0.5
V
VCE=-2V, IC=-500mA
-1
V
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
6
10
16
RANGE
40-100
63-160
100-250
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D,Aug,2017
Typical Characteristics
hFE
Static Characteristic
-180
300
COMMON
EMITTER
Ta=25℃
-1mA
-150
hFE
-0.7mA
-0.6mA
-90
-0.5mA
-0.4mA
-60
-0.3mA
-0.2mA
-30
COMMON EMITTER
VCE=-2V
250
-0.8mA
-120
IC
Ta=100℃
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
-0.9mA
——
200
Ta=25℃
150
100
50
IB=-0.1mA
-0
0
-0
-2
-4
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
-6
VCE
-1
VBEsat
-1200
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-100
Ta=100℃
Ta=25℃
-10
-1
-10
-100
COLLECTOR CURRENT
IC
-1500
-1000
-800
IC
Ta=25℃
Ta=100℃
-400
——
IC
-1000 -1500
-1
-10
(mA)
-100
COLLECTOR CURRENT
Cob/ Cib
VBE
-1000 -1500
IC
(mA)
VCB/ VEB
——
1000
COMMON EMITTER
VCE=-2V
f=1MHz
IE=0/IC=0
Ta=25℃
(pF)
(mA)
Ta=100℃
Ta=25℃
-10
-1
-200
Cib
C
-100
CAPACITANCE
IC
COLLECTOR CURRENT
(mA)
-0
-1
-400
-600
-800
100
Cob
10
-0.1
-1000
-1
BASE-EMMITER VOLTAGE VBE (mV)
fT
——
-10
REVERSE VOLTAGE
IC
PC
1.50
COLLECTOR POWER DISSIPATION
PC (W)
200
100
fT
(MHz)
——
IC
β=10
β=10
TRANSITION FREQUENCY
-1000 -1500
-100
COLLECTOR CURRENT
IC
-1000
-10
(V)
30
COMMON EMITTER
VCE= -2V
——
V
-20
(V)
Ta
1.25
1.00
0.75
0.50
0.25
Ta=25℃
10
-10
0.00
COLLECTOR CURRENT
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-100
-30
IC
0
(mA)
25
50
75
AMBIENT TEMPERATURE
3
100
Ta
125
150
(℃ )
D,Aug,2017
TO-126 Package Outline Dimensions
Symbol
A
A1
b
b1
c
D
E
e
e1
h
L
L1
P
Φ
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Dimensions In Millimeters
Min
Max
2.500
2.900
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
2.290 TYP
4.480
4.680
0.000
0.300
15.300
15.700
2.100
2.300
3.900
4.100
3.000
3.200
4
Dimensions In Inches
Min
Max
0.098
0.114
0.043
0.059
0.026
0.034
0.046
0.054
0.018
0.024
0.291
0.307
0.417
0.433
0.090 TYP
0.176
0.184
0.000
0.012
0.602
0.618
0.083
0.091
0.154
0.161
0.118
0.126
D,Aug,2017
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