BD243B, BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage BD243B, BD244B BD243C, BD244C Symbol Value Unit VCEO 80 100 VCB Emitter−Base Voltage VEB 5.0 Vdc IC 6 Adc ICM 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 65 0.52 W W/°C −65 to +150 °C Collector Current − Peak Operating and Storage Junction Temperature Range NPN COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE Vdc 80 100 TJ, Tstg PNP Vdc Collector−Base Voltage BD243B, BD244B BD243C, BD244C Collector Current − Continuous www.onsemi.com EMITTER 3 4 TO−220 CASE 221A STYLE 1 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance, Junction−to−Case 2 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics EMITTER 3 BD24xy = Symbol Max Unit RqJC 1.92 °C/W BD24xyG AY WW A Y WW G = = = = Device Code x = 3 or 4 y = B or C Assembly Location Year Work Week Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 15 1 Device Package Shipping BD243BG TO−220 (Pb−Free) 50 Units / Rail BD243CG TO−220 (Pb−Free) 50 Units / Rail BD244BG TO−220 (Pb−Free) 50 Units / Rail BD244CG TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: BD243B/D BD243B, BD243C (NPN), BD244B, BD244C (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) BD243B, BD244B BD243C, BD244C Min Max VCEO(sus) Vdc 80 100 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) BD243B, BD243C, BD244B, BD244C ICEO Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) BD243B, BD244B (VCE = 100 Vdc, VEB = 0) BD243C, BD244C ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Unit − − mAdc − 0.7 mAdc − 400 − 400 − 1.0 30 15 − − − 1.5 − 2.0 3.0 − 20 − mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 1.0 Adc) VCE(sat) Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe MHz − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulsewidth ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT = hfe • ftest PD, POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating www.onsemi.com 2 140 160 BD243B, BD243C (NPN), BD244B, BD244C (PNP) 2.0 VCC - 30 V TJ = 25°C VCC = 30 V IC/IB = 10 1.0 25 ms 0.7 0.5 RC + 11 V t, TIME (s) μ SCOPE RB 0 - 9.0 V 51 tr, tf v 10 ns DUTY CYCLE = 1.0% D1 0.3 0.2 tr 0.1 0.07 0.05 -4V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.03 0.02 0.06 D1 MUST BE FAST RECOVERY TYPE eg. 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA td @ VBE(off) = 5.0 V 1.0 0.2 0.4 0.6 2.0 IC, COLLECTOR CURRENT (AMP) 0.1 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 4.0 6.0 Figure 3. Turn−On Time 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RqJC(max) = 1.92°C/W 0.02 t1 0.03 0.01 0.02 SINGLE PULSE t2 SINGLE PULSE D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.5 ms IC, COLLECTOR CURRENT (AMP) 5.0 3.0 1.0 ms 2.0 TJ = 150°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C 1.0 0.5 5.0 ms CURVES APPLY BELOW RATED VCEO 0.3 0.2 0.1 5.0 BD243B, BD244B BD243C, BD244C 40 80 10 20 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active Region Safe Operating Area www.onsemi.com 3 BD243B, BD243C (NPN), BD244B, BD244C (PNP) 5.0 300 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 ts t, TIME (s) μ 1.0 TJ = 25°C 200 CAPACITANCE (pF) 3.0 2.0 0.7 0.5 0.3 0.2 tf 0.1 0.07 0.05 0.06 100 70 Cob 50 1.0 0.2 0.4 0.6 2.0 IC, COLLECTOR CURRENT (AMP) 0.1 Cib 30 0.5 4.0 6.0 1.0 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn-Off Time 30 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN VCE = 2.0 V TJ = 150°C 100 70 50 25°C -55°C 10 7.0 5.0 0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 6.0 2.0 TJ = 25°C 1.6 IC = 1.0 A θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.6 0.4 0 0.06 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.4 0.6 1.0 5.0 A 0.8 0.4 0 10 20 30 50 100 200 300 IB, BASE CURRENT (mA) 500 1000 Figure 9. Collector Saturation Region 2.0 0.8 2.5 A 1.2 Figure 8. DC Current Gain 1.2 50 Figure 7. Capacitance 500 300 200 30 2.0 3.0 4.0 +2.5 +2.0 +1.5 +1.0 + 25°C to + 150°C +0.5 0 *qVC FOR VCE(sat) - 55°C to + 25°C -0.5 + 25°C to + 150°C -1.0 -1.5 qVB FOR VBE - 55°C to + 25°C -2.0 -2.5 0.06 6.0 *APPLIES FOR IC/IB ≤ 5.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.4 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients www.onsemi.com 4 0.6 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) BD243B, BD243C (NPN), BD244B, BD244C (PNP) 103 IC, COLLECTOR CURRENT (A) μ VCE = 30 V 102 TJ = 150°C 101 100°C 25°C 100 10-1 10-2 IC = ICES REVERSE 10-3 -0.3 -0.2 -0.1 FORWARD 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7 10M VCE = 30 V 1.0M IC = 10 x ICES IC = 2 x ICES 100k IC ≈ ICES 10k 1.0k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 0.1k 20 40 60 80 100 120 140 160 VBE, BASE‐EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base−Emitter Resistance www.onsemi.com 5 BD243B, BD243C (NPN), BD244B, BD244C (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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