AP10C325Y
Halogen-Free Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D1
D1
▼ HBM ESD 2kV
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
2928-8
N-CH BVDSS
RDS(ON)
ID
G2
S2
G1
S1
2A
-100V
RDS(ON)
ID
AP10C325 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
good
325mΩ
4
P-CH BVDSS
Description
The 2928-8 J-lead package provides
performance and space saving like TSOP-6.
100V
470mΩ
4
-1.5A
D1
D2
G1
G2
on-resistance
S1
S2
Absolute Maximum Ratings@Tj=25oC(unless
otherwise specified)
.
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
Drain Current, VGS @ 10V
Pulsed Drain Current
IDM
4
1
3
Units
P-channel
100
-100
V
+20
+20
V
2
-1.5
A
6
-6
A
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
1.38
W
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
90
℃/W
1
201703071
AP10C325Y
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
100
-
-
V
VGS=10V, ID=2A
-
-
325
mΩ
VGS=4.5V, ID=2A
-
-
340
mΩ
1.4
-
3
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=2A
-
7.5
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=2A
-
6.5
10.4
nC
Qgs
Gate-Source Charge
VDS=50V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
1.3
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
15
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
63
-
ns
tf
Fall Time
VGS=10V
-
27
-
ns
Ciss
Input Capacitance
VGS=0V
-
310
496
pF
Coss
Output Capacitance
VDS=50V
-
21
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
14
-
pF
Min.
Typ.
IS=1A, VGS=0V
-
-
1.3
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=2A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
2
AP10C325Y
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
Max.
Unit
-100
-
-
V
VGS=-10V, ID=-1.5A
-
-
470
mΩ
VGS=-4.5V, ID=-0.75A
-
-
510
mΩ
VGS=0V, ID=-1mA
2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-2.5
V
gfs
Forward Transconductance
VDS=-10V, ID=-1.5A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-80V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=-1.5A
-
14
22.4
nC
Qgs
Gate-Source Charge
VDS=-50V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=-50V
-
15
-
ns
tr
Rise Time
ID=-1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
110
-
ns
tf
Fall Time
VGS=-10V
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
680
1088
pF
Coss
Output Capacitance
VDS=-50V
-
30
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
24
-
pF
Min.
Typ.
Max.
Unit
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-1A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-1.5A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
23
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 210oC/W at steady state.
4.Ensure that the junction temperature does not exceed TJmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP10C325Y
N-Channel
6
5
10V
7.0V
6.0V
5.0V
V G = 4.0V
ID , Drain Current (A)
5
4
10V
7.0V
6.0V
5.0V
V G = 4.0V
o
T A = 150 C
4
ID , Drain Current (A)
o
T A =25 C
3
2
3
2
1
1
0
0
0
1
2
3
4
5
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
250
ID=2A
T A =25 o C
I D =2A
V G =10V
2.0
230
.
220
Normalized RDS(ON)
RDS(ON) (mΩ)
240
1.6
1.2
0.8
210
0.4
200
0.0
2
4
6
8
-100
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
6
I D =250uA
5
Normalized VGS(th)
1.2
IS(A)
4
T j =150 o C
3
T j =25 o C
2
0.8
0.4
1
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP10C325Y
N-Channel
f=1.0MHz
600
ID=2A
V DS = 50 V
10
500
C (pF)
VGS , Gate to Source Voltage (V)
12
8
400
6
300
4
200
2
100
C iss
C oss
C rss
0
0
0
2
4
6
8
1
10
21
41
61
81
101
121
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
ID (A)
1
100us
0.1
.
1ms
10ms
0.01
o
T A =25 C
Single Pulse
100ms
1s
DC
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
0.2
0.05
PDM
0.02
t
0.01
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 210℃/W
0.001
0.001
0.01
0.1
1
10
100
0.0001
1000
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
2
10
I D =1mA
V DS =10V
1.6
Normalized BVDSS
8
ID , Drain Current (A)
0.1
0.1
6
4
1.2
0.8
0.4
2
T j =150 o C
T j =25 o C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
-100
-50
0
T
j
50
100
150
, Junction Temperature ( o C)
Fig 12. Normalized BVDSS v.s. Junction
5
AP10C325Y
P-Channel
5
6
4
T A = 150 C
4
-ID , Drain Current (A)
-ID , Drain Current (A)
5
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
o
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
o
T A = 25 C
3
2
3
2
1
1
0
0
0
2
4
6
0
8
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
310
I D = -1.5 A
V G = -10 V
I D = - 1.5 A
T A =25 o C
2.0
290
.
280
Normalized RDS(ON)
RDS(ON) (mΩ)
300
1.6
1.2
0.8
270
0.4
0.0
260
2
4
6
8
-100
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
2.0
I D = -250uA
5
1.6
-IS(A)
T j =25 o C
Normalized VGS(th)
T j =150 o C
4
3
2
1.2
0.8
0.4
1
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP10C325Y
P-Channel
12
I D = -1.5A
V DS = -50V
10
1000
8
800
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
1200
6
600
4
400
2
200
C iss
C oss
C rss
0
0
0
4
8
12
16
20
1
21
Q G , Total Gate Charge (nC)
41
61
81
101
121
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
-ID (A)
1
100us
.
0.1
1ms
10ms
0.01
100ms
1s
DC
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 210℃/W
0.001
0.001
0.01
0.1
1
10
100
0.0001
1000
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
10
100
1000
Fig 10. Effective Transient Thermal Impedance
2
10
I D = -1mA
V DS = -10V
1.6
Normalized BVDSS
8
-ID , Drain Current (A)
0.1
t , Pulse Width (s)
6
4
1.2
0.8
T j =25 o C
T j =150 o C
2
0.4
0
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
-100
-50
0
T
j
50
100
150
, Junction Temperature ( o C)
Fig 12. Normalized BVDSS v.s. Junction
7
AP10C325Y
MARKING INFORMATION
Part Number : YY9
YY9YSS
Date Code (YSS)
Y：Last Digit Of The Year
SS：Sequence
.
8