IRF IRAM256-1067A Integrated gate drivers and bootstrap diode Datasheet

IRAM256-1067A
Series
10A, 600V
Integrated Power Module for
Appliance Motor Drive Applications
Description
International Rectifier's IRAM256-1067A is a 10A, 600V Integrated Power Hybrid IC with Open Emitter pins for
advanced Appliance Motor Drives applications such as energy efficient Air Conditioner and Washing Machine.
IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to
simplify design.
This advanced HIC is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark 3
phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A built-in
high precision temperature monitor and over-current protection feature, along with the short-circuit rated IGBTs
and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a
Single in line package with full transfer mold structure and CTI>600 minimizes PCB space and resolves isolation
problems to heatsink.
Features
•
•
•
•
•
•
•
•
•
•
•
Integrated gate drivers and bootstrap diodes
Temperature monitor
Protection shutdown pin
Low VCE (on) Trench IGBT technology
Undervoltage lockout for all channels
Matched propagation delay for all channels
3.3V Schmitt-triggered input logic
Cross-conduction prevention logic
Motor Power range 0.25~0.75kW / 85~253 Vac
Isolation 2000VRMS min and CTI> 600
High operating case temperature, TCMAX=125°C
Base Part Number
Package Type
IRAM256-1067A
IRAM256-1067A2
1
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Standard Pack
Orderable Part Number
Form
Quantity
SIP1A, option 1 LF
10 tubes
80
IRAM256-1067A
SIP1A, option 2 LF
10 tubes
80
IRAM256-1067A2
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IRAM256-1067A
Internal Electrical Schematic – IRAM256-1067A
V+ (13)
Q1
D1
Q2
D2
Q3
D3
Q4
D4
Q5
D5
Q6
D6
VRU (17)
VRV (19)
VRW (21)
R1
VB1 (9)
C1
R2
U, VS1 (10)
VB2 (5)
R3
C2
V, VS2 (6)
VB3 (1)
C3
R4
W, VS3 (2)
D9
D8
R5
R6
D7
23 VS1
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
LO1 16
24 HO1
R9
25 VB1
LO2 15
1 VCC
HIN1 (20)
2 HIN1
HIN2 (22)
3 HIN2
HIN3 (23)
4 HIN3
LIN1 (24)
Driver IC
LO3 14
LIN1 LIN2 LIN3
6
7
5
F ITRIP EN RCIN VSS
8
9
10 11 12
COM 13
LIN2 (25)
LIN3 (26)
ITRIP (16)
FLT/EN (18)
R7
C7
VTH (27)
VCC (28)
R8
C6
C5
C4
VSS (29)
2
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IRAM256-1067A
Absolute Maximum Ratings
Symbol
Description
Min
Max
VCES / VRRM
IGBT/ FW Diode Blocking Voltage
---
600
V+
Positive Bus Input Voltage
---
450
IO @ TC=25°C
RMS Phase Current (Note 1)
---
10
IO @ TC=100°C
RMS Phase Current (Note 1)
---
5
IPK
Maximum Peak Phase Current (Note 2)
---
15
Unit
V
A
FP
Maximum PWM Carrier Frequency
---
20
kHz
PD
Maximum Power dissipation per IGBT @ TC =25°C
---
28
W
VISO
Isolation Voltage (1min)
---
2000
VRMS
TJ (IGBT/Diode/IC)
Operating Junction Temperature
-40
150
TC
Operating Case Temperature Range
-40
125
TSTG
Storage Temperature Range
-40
125
T
Mounting torque Range (M3 screw)
0.8
1.0
Nm
IBDF
Bootstrap Diode Peak Forward Current
---
1.0
A
PBR_Peak
Bootstrap Resistor Peak Power (Single Pulse)
---
15
W
VS1,2,3
High side floating supply offset voltage
VB1,2,3 - 20
VB1,2,3 +0.3
V
VB1,2,3
High side floating supply voltage
-0.3
600
V
VCC
Low Side and logic fixed supply voltage
Input voltage LIN, HIN, ITRIP, FLT/EN
-0.3
20
V
-0.3
7
V
VIN
Note 1: See Figure 4 and IR IPM Design Tool.
Note 2: tP<100ms.
°C
Inverter Section Electrical Characteristics
VBIAS(VCC, VBS1,2,3)=15V, TJ=25°C unless otherwise specified.
Symbol
Description
Min
V(BE)CES
ΔV(BR)CES / ΔT
Collector-to-Emitter Breakdown
Voltage
Temperature Coeff. Of
Breakdown Voltage
Typ
Max
Unit
600
---
---
V
VIN=0V, IC=100μA
---
0.3
---
V/°C
VIN=0V, IC=250A
(25°C - 150°C)
VCE(ON)
Collector-to-Emitter Saturation
Voltage
---
1.5
1.75
---
1.7
---
ICES
Zero Gate Voltage Collector
Current
---
5
80
---
80
---
VFM
Diode Forward Voltage Drop
---
1.6
2.35
---
1.3
---
VBDFM
Bootstrap Diode Forward
Voltage Drop
---
1.65
1.8
---
1.3
---
RBR
Bootstrap Resistor Value
---
22
---
Ω
ΔRBR/RBR
Bootstrap Resistor Tolerance
---
---
±5
%
C1,2,3,4
VCC / VBS Capacitor Value
---
47
---
nF
C6
ITRIP Capacitor Value
---
1
---
nF
C7
NTC Capacitor Value
---
2.2
---
nF
3
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V
μA
V
V
Conditions
IC=4A
IC=4A, TJ=150°C
VIN=0V, V+=600V
VIN=0V, V+=600V, TJ=150°C
IF=4A
IF=4A, TJ=150°C
IF=1A
IF=1A, TJ=150°C
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IRAM256-1067A
Inverter Section Switching Characteristics
VBIAS(VCC, VBS1,2,3)=15V, TJ=25°C unless otherwise specified.
Symbol
Description
Min
Typ
Max
EON
Turn-On Switching Loss
---
170
---
EOFF
Turn-Off Switching Loss
---
60
---
ETOT
Total Switching Loss
---
230
---
EREC
Diode Reverse Recovery
energy
---
15
---
TRR
Diode Reverse Recovery time
---
115
---
EON
Turn-On Switching Loss
---
260
---
EOFF
Turn-Off Switching Loss
---
100
---
ETOT
Total Switching Loss
---
360
---
---
40
---
---
150
---
ns
---
13
---
nC
TRR
Diode Reverse Recovery
energy
Diode Reverse Recovery time
QG
Turn-On IGBT Gate Charge
RBSOA
Reverse Bias Safe Operating
Area
EREC
SCSOA
SCSOA
Short Circuit Safe Operating
Area
Short Circuit Safe Operating
Area
Unit
Conditions
+
IC=4A, V =400V
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
µJ
See CT1
ns
+
IC=4A, V =400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
µJ
See CT1
IC=6A, V+=400V, VGE=15V
TJ=150°C, IC=4A, VP=600V
+
V = 450V,
VCC=+15V to 0V
See CT3
FULL SQUARE
5
---
---
µs
3
---
---
µs
TJ=25°C, V+= 400V, VGE=+15V
to 0V
TJ=100°C, V+= 400V,
VGE=+15V to 0V
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V
differential (Note 3)
Symbol
Description
Min
TYP
Max
Unit
VB1,2,3
High side floating supply voltage
VS+12.5
VS+15
VS+17.5
V
VS1,2,3
High side floating supply offset voltage
Note 4
---
450
V
VCC
Low side and logic fixed supply voltage
13.5
15
16.5
V
VIN
Input voltage LIN, HIN, ITRIP, FLT/EN
VSS
---
VSS+5
V
HIN
High side PWM pulse width
1
---
---
µs
Deadtime
External dead time between HIN and LIN
1
----Note 3: For more details, see IR21364 data sheet
Note 4: Logic operational for VS from COM-5V to COM+600V. Logic state held for VS from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
µs
4
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IRAM256-1067A
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are
applicable to all six channels. (Note 3)
Symbol
Description
Min
TYP
Max
Unit
VIN,TH+
Positive going input threshold for LIN, HIN, FLT/EN
2.5
---
---
V
VIN,TH-
Negative going input threshold for LIN, HIN, FLT/EN
---
---
0.8
V
VCCUV+, VBSUV+
VCC/VBS supply undervoltage, Positive going threshold
10.6
11.1
11.6
V
VCCUV-, VBSUV-
VCC/VBS supply undervoltage, Negative going threshold
10.4
10.9
11.4
V
VCCUVH, VBSUVH
VCC and VBS supply undervoltage lock-out hysteresis
---
0.2
---
V
IQBS
Quiescent VBS supply current
---
---
150
µA
IQCC
Quiescent VCC supply current
---
---
3.2
mA
ILK
Offset Supply Leakage Current
---
---
50
µA
IIN+
Input bias current VIN=3.3V for LIN, HIN, FLT/EN
---
100
195
µA
IIN-
Input bias current VIN=0V for LIN, HIN, FLT/EN
-1
---
---
µA
ITRIP+
ITRIP bias current VITRIP=3.3V
---
3.3
6
µA
ITRIP-
ITRIP bias current VITRIP=0V
VITRIP
ITRIP threshold Voltage
VITRIP_HYS
RFLT
-1
---
---
µA
0.44
0.49
0.54
V
ITRIP Input Hysteresis
---
0.07
---
V
Fault low on resistance
---
50
100
Ω
Dynamic Electrical Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. Dynamic parameters are guaranteed by design. (Note 3)
Symbol
Description
Min
Typ
Max
Unit
Conditions
Input to Output propagation
turn-on delay time (see Fig.12)
Input to Output propagation
turn-off delay time (see Fig.12)
Input filter time (HIN,LIN)
TON
---
---
1.15
µs
---
---
1.15
µs
---
310
---
ns
VIN=0 or VIN=5V
Input filter time (FLT/EN)
EN low to six switch turn-off
propagation delay (see fig. 3)
100
200
---
ns
VEN=0 or VEN=5V
---
---
1.35
µs
VIN=0 or VIN=5V, VEN=0
TFLT
ITRIP to Fault propagation delay
400
600
800
ns
VIN=0 or VIN=5V, VITRIP=5V
TBLT-TRIP
ITRIP Blanking Time
ITRIP to six switch turn-off
propagation delay (see fig. 2)
Internal Dead Time injected by
driver
Matching Propagation Delay
Time (On & Off) all channels
100
150
---
ns
VIN=0 or VIN=5V, VITRIP=5V
---
---
1.5
µs
IC=4A, V+=300V
220
290
360
ns
VIN=0 or VIN=5V
---
40
75
ns
External dead time> 400ns
Post ITRIP to six switch turn-off
clear time (see fig. 2)
1.1
1.7
2.3
1
1.5
1.9
TOFF
TFILIN
TFILEN
TEN
TITRIP
DT
MT
TFLT-CLR
5
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ms
IC=4A, V+=300V
TC = 25°C
TC = 100°C
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IRAM256-1067A
Thermal and Mechanical Characteristics
Symbol
Description
RTH(J-C)
Thermal resistance, per IGBT
Min
Typ
Max
---
3.5
4.4
Unit
Conditions
Inverter Operating Condition
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
°C/W
RTH(J-C)
Thermal resistance, per Diode
---
5.0
6.3
RTH(C-S)
Thermal resistance, C-S
---
0.1
---
CTI
Comparative Tracking Index
600
---
---
V
---
µm
Convex only
Conditions
BKCurve
Curvature of module backside
0
--Note 5: Flatness of the heatsink should be between -50µm to 100µm.
Internal NTC - Thermistor Characteristics
Symbol
Description
Min
Typ
Max
Unit
R25
Resistance
44.65
47
49.35
kΩ
TC = 25°C
R125
Resistance
1.27
1.41
1.56
kΩ
TC = 125°C
B
B-constant (25-50°C)
3989
4050
4111
k
Temperature Range
-40
---
125
°C
Typ. Dissipation constant
---
1
---
mW/°C
R2 = R1e[B(1/T2 - 1/T1)]
TC = 25°C
Input-Output Logic Level Table
V+
LIN1,2,3
IC
Driver
(24,25,26)
HIN1,2,3
LIN1,2,3
U,V,W
0
1
0
V+
1
0
0
1
0
U,V,W
1
0
0
0
Off
(10,6,2)
1
0
1
1
Off
1
1
X
X
Off
0
X
X
X
Off
Lo
Qualification Information†
Qualification Level
Machine Model
ESD
ITRIP
1
Ho
HIN1,2,3
(20,22,23)
FLT/EN
Human Body Model
Industrial††
(per JEDEC JESD 47E)
Class C
(per JEDEC standard JESD22-A115-A)
Class 1C
(per JEDEC standard JESD22-A114-D)
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
†† Higher qualification ratings may be available should the user have such requirements. Please contact your International
Rectifier sales representative for further information.
6
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IRAM256-1067A
HIN1,2,3
LIN1,2,3
ITRIP
U,V,W
Figure 1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
ITRIP
50%
TFLT
50%
FLT
U,V,W
50%
50%
TITRIP
TFLT-CLR
Figure 2. ITRIP Timing Waveform
EN
50%
TEN
U,V,W
50%
Figure 3. Output Enable Timing Diagram
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge
output voltage would be determined by the direction of current flow in the load.
7
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IRAM256-1067A
Module Pin-Out Description
Pin
1
VB3
2
W,VS3
3
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
None
5
VB2
High Side Floating Supply Voltage 2
6
V,VS2
7
Output 2 - High Side Floating Supply Offset Voltage
N/A
None
9
VB1
High Side Floating Supply Voltage 1
10
U,VS1
8
11
Output 1 - High Side Floating Supply Offset Voltage
N/A
None
V+
Positive Bus Input Voltage
N/A
None
16
ITRIP
Current Protection Pin
17
VRU
Low Side Emitter Connection - Phase 1
18
FLT/EN
12
13
14
15
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Description
N/A
4
8
Name
Fault Output and Enable Pin
19
VRV
Low Side Emitter Connection - Phase 2
20
HIN1
Logic Input High Side Gate Driver - Phase 1
21
VRW
Low Side Emitter Connection - Phase 3
22
HIN2
Logic Input High Side Gate Driver - Phase 2
23
HIN3
Logic Input High Side Gate Driver - Phase 3
24
LIN1
Logic Input Low Side Gate Driver - Phase 1
25
LIN2
Logic Input Low Side Gate Driver - Phase 2
26
LIN3
Logic Input Low Side Gate Driver - Phase 3
27
VTH
Temperature Feedback
28
VCC
+15V Main Supply
29
VSS
Negative Main Supply
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IRAM256-1067A
Typical Application Connection IRAM256-1067A
1
W, VS3 (2)
W
BOOT-STRAP
CAPACITORS
3-Phase AC
MOTOR
VB2 (5)
V, VS2 (6)
VB1 (9)
U, VS1 (10)
U
V+
V+ (13)
DC BUS
CAPACITORS
ITRIP (16)
VRU (17)
PHASE LEG
CURRENT
SENSE
FLT/EN (18)
VRV (19)
HIN1 (20)
VRW (21)
HIN2 (22)
HIN3 (23)
LIN1 (24)
CONTROLLER
IRAM256-1067A
V
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
VB3 (1)
LIN2 (25)
LIN3 (26)
VTH (27)
VDD (28)
VSS (29)
15 V
5V
100nF
10m
0.1m
29
Enable
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will
further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown
connected between these terminals should be located very close to the module pins. Additional high frequency
capacitors, typically 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made
based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be
selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table
on page 3).
4. After approx. 2ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent
condition must be cleared before resuming operation.
9
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Maxim um Output Phase RMS Current - A
IRAM256-1067A
10
V+=320V
V+=400V
8
6
4
TC = 90ºC
TC = 100ºC
TC = 125ºC
2
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 4. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
Maxim um Output Phase RMS Current - A
8
7
6
5
4
FPWM = 6kHz
FPWM = 10kHz
FPWM = 16kHz
3
2
V+=320V
V+=400V
1
0
1
10
100
Modulation Frequency - Hz
Figure 5. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, TJ=150°C, TC=100°C, MI=0.8, PF=0.6
10
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IRAM256-1067A
100
Total Pow er Loss- W
80
60
40
IOUT = 6A
IOUT = 5A
IOUT = 4A
20
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 6. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
100
Total Pow er Loss - W
80
60
40
FPWM = 20kHz
FPWM = 16kHz
FPWM = 6kHz
20
0
0
1
2
3
4
5
6
7
Output Phase Current - ARMS
Figure 7. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
11
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IRAM256-1067A
Max Allow able Case Temperature - ºC
160
140
120
100
FPWM = 20kHz
FPWM = 16kHz
FPWM = 6kHz
80
60
40
0
1
2
3
4
5
6
7
Output Phase Current - ARMS
Figure 8. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
160
TJ avg = 1.11 x TT herm + 13
IGBT Junction Tem perature - °C
150
140
130
120
110
100
123
90
65
70
75
80
85
90
95
100
105
110
115
120
125
130
Internal Thermistor Temperature Equivalent Read Out - °C
Figure 9. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=6kHz, fmod=50Hz, MI=0.8, PF=0.6
12
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IRAM256-1067A
Figure 10. Thermistor Readout vs. Temperature (7.5kohm REXT pull-down resistor) and Normal Thermistor
Resistance values vs. Temperature Table.
Figure 11. Recommended Bootstrap Capacitor Value vs. Switching Frequency
13
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IRAM256-1067A
Figure 12. Switching Parameter Definitions
IC
VCE
IC
VCE
HIN /LIN
50%
HIN /LIN
90 % IC
50%
VCE
90 % IC
50%
HIN /LIN
HIN /LIN
50%
VCE
10 % IC
10 % IC
tr
tf
TON
TOFF
Figure 12a. Input to Output propagation turnon delay time.
IF
Figure 12b. Input to Output propagation turnoff delay time.
VCE
HIN /LIN
Irr
trr
Figure 12c. Diode Reverse Recovery.
14
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IRAM256-1067A
V+
IN
Ho
Hin1,2,3
IC
Driver
U,V,W
Lo
Lin1,2,3
IO
Figure CT1. Switching Loss Circuit
V+
Lin1,2,3
IN
Ho
Hin1,2,3
IC
Driver
U,V,W
Lo
IO
Io
Figure CT2. S.C.SOA Circuit
V+
IC
Driver
Lin1,2,3
IN
Ho
Hin1,2,3
U,V,W
IO
Lo
Io
Figure CT3. R.B.SOA Circuit
15
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IRAM256-1067A
Package Outline IRAM256-1067A
Missing pins: 3,4,7,8,11,12,14,15
Dimensions in mm
For mounting instruction see AN-1049
16
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IRAM256-1067A
Package Outline IRAM256-1067A2
Missing pins: 3,4,7,8,11,12,14,15
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
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May 14, 2014
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