PHILIPS BC857CM Pnp general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
BC857M series
PNP general purpose transistors
Product specification
Supersedes data of 2003 Jul 15
2004 Mar 10
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
FEATURES
QUICK REFERENCE DATA
• Leadless ultra small plastic package
(1 mm × 0.6 mm × 0.5 mm)
SYMBOL
• Board space 1.3 × 0.9 mm
• Power dissipation comparable to SOT23.
APPLICATIONS
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
−45
V
IC
collector current (DC)
−100
mA
ICM
peak collector current
−200
mA
PINNING
• General purpose small signal DC
PIN
• Low and medium frequency AC applications
• Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
DESCRIPTION
1
base
2
emitter
3
collector
DESCRIPTION
PNP general purpose transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: BC847M series.
3
handbook, halfpage
2
1
3
MARKING
1
2
TYPE NUMBER
Bottom view
MARKING CODE
BC857AM
D1
BC857BM
D2
BC857CM
D3
MAM469
Fig.1 Simplified outline (SOT883) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC857AM
BC857BM
−
DESCRIPTION
Leadless ultra small plastic package; 3 solder lands; body
1.0 x 0.6 x 0.5 mm
BC857CM
2004 Mar 10
2
VERSION
SOT883
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−45
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−100
mA
Ptot
total power dissipation
note 1
−
250
mW
note 2
−
430
mW
Tamb ≤ 25 °C
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
note 1
500
K/W
note 2
290
K/W
in free air
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.
2004 Mar 10
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
UNIT
VCB = −30 V; IE = 0
−
−15
nA
−
−5
µA
−
−100
nA
BC857AM
125
250
BC857BM
220
475
emitter-base cut-off current
VEB = −5 V; IC = 0
hFE
DC current gain
VCE = −5 V; IC = −2 mA
BC857CM
VCEsat
MAX.
VCB = −30 V; IE = 0; Tj = 150 °C
collector-base cut-off current
IEBO
VBE
MIN.
base-emitter voltage
collector-emitter saturation voltage
420
800
IC = −2 mA; VCE = −5 V
−600
−750
mV
IC = −10 mA; VCE = −5 V
−
−820
mV
IC = −10 mA; IB = −0.5 mA
−
−200
mV
IC = −100 mA; IB = −5 mA; note 1
−
−400
mV
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
2.5
pF
fT
transition frequency
VCE = −5 V; IC = −10 mA;
f = 100 MHz
100
−
MHz
F
noise figure
IC = −200 µA; VCE = −5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
−
10
dB
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Mar 10
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
GRAPHICAL INFORMATION BC857AM
MLE188
500
MLE189
−1200
handbook, halfpage
handbook, halfpage
VBE
(mV)
hFE
−1000
400
(1)
(1)
−800
300
(2)
(2)
200
−600
(3)
0
−10−2
(3)
−400
100
−10−1
−1
−10
−200
−10−2
−102
−103
IC (mA)
−10−1
−10
−1
−102
−103
IC (mA)
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.3
Fig.2 DC current gain; typical values.
MLE190
−104
handbook, halfpage
Base-emitter voltage as a function of
collector current; typical values.
MLE191
−1200
handbook, halfpage
VBEsat
VCEsat
(mV)
(mV)
−1000
(1)
−103
(2)
−800
−102
(3)
−600
(1)
(2)
(3)
−10
−10−1
−1
−10
−400
−102
IC (mA)
−200
−10−1
−103
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
5
−1
−10
−102
−103
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
GRAPHICAL INFORMATION BC857BM
MLE192
1000
MLE193
−1200
handbook, halfpage
handbook, halfpage
hFE
VBE
(mV)
−1000
800
(1)
600
−800
(1)
(2)
−600
400
(2)
200
0
−10−2
(3)
−400
(3)
−10−1
−1
−10
−200
−10−2
−102
−103
IC (mA)
−10−1
−10
−1
−102
−103
IC (mA)
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.7
Fig.6 DC current gain; typical values.
MLE194
−104
handbook, halfpage
Base-emitter voltage as a function of
collector current; typical values.
MLE195
−1200
handbook, halfpage
VBEsat
VCEsat
(mV)
(mV)
−1000
(1)
−103
(2)
−800
(3)
−600
−102
(1)
(2)
−400
(3)
−10
−10−1
−1
−10
−102
IC (mA)
−200
−10−1
−103
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
6
−1
−10
−102
−103
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
GRAPHICAL INFORMATION BC857CM
MLE196
1000
MLE197
−1200
VBE
handbook, halfpage
handbook, halfpage
hFE
(mV)
(1)
−1000
800
(1)
−800
600
(2)
(2)
−600
400
(3)
(3)
−400
200
0
−10−2
−10−1
−1
−10
−200
−10−1
−102
−103
IC (mA)
−1
−10
−102
−103
IC (mA)
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
Fig.10 DC current gain; typical values.
MLE198
−104
handbook, halfpage
MLE199
−1200
handbook, halfpage
VBEsat
VCEsat
(mV)
(mV)
−1000
(1)
−103
(2)
−800
(3)
−600
(1)
−102
(2)
−400
(3)
−10
−10−1
−1
−10
−102
IC (mA)
−200
−10−1
−103
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
−1
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
7
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883
2004 Mar 10
REFERENCES
IEC
JEDEC
JEITA
SC-101
8
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Mar 10
9
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA76
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Printed in The Netherlands
R75/02/pp10
Date of release: 2004
Mar 10
Document order number:
9397 750 12839
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