NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682/A Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value BD675/A BD677/A BD679/A BD681/A BD675/A BD677/A BD679/A BD681/A VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current IB PT TJ TStg Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature IC ICM IBM @ Tmb = 25°C Unit 45 60 80 100 45 60 80 100 5 4 6 0.1 40 150 -65 to +150 A W °C °C Value Unit 3.12 100 K/W K/W V V V A THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air 23/10/2012 COMSET SEMICONDUCTORS 1 |3 NPN BD675/A - BD677/A - BD679/A - BD681/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings ICBO Collector cut-off current ICEO Collector cut-off current IEBO Emitter cutoffcurrent VCEO(SUS) VCE(SAT) hFE VBE hfe fhfe VF I(SB) Test Condition(s) IE=0 , VCB= 60 V IE=0 , VCB= 80 V IE=0 , VCB= 100 V IE=0 , VCB= 120 V IE=0 ,VCB = 30V, Tj= 150°C IE=0 ,VCB = 40V, Tj= 150°C IE=0 ,VCB = 50V, Tj= 150°C IE=0 ,VCB = 60V, Tj= 150°C IB=0 , VCE= ½VCEOMAX IB=0 , VCE= ½VCEOMAX IB=0 , VCE= ½VCEOMAX IB=0 , VCE= ½VCEOMAX BD675/A BD677/A BD679/A BD681/A BD675/A BD677/A BD679/A BD681/A BD675/A BD677/A BD679/A BD681/A IC=0, -VEB=5 V BD675/A BD677/A Collector-Emitter I =0 , IC=50 mA sustaning Voltage B BD679/A BD681/A BD675, BD677, BD679, BD681 IC=1.5 A,IB=30 mA Collector-Emitter saturation Voltage BD675A, BD677A, BD679A, BD681A IC=2 A,IB=40 mA BD675, BD677, BD679, BD681 VCE=3 V, IC=500 mA BD675, BD677, BD679, BD681 VCE=3 V, IC=1,5 A DC Current Gain BD675, BD677, BD679, BD681 VCE=3 V, IC=4 A BD675A, BD677A, BD679A, BD681A VCE=3 V, IC=2 A BD675, BD677, BD679, BD681 VCE=3 V, IC=1,5 A Base-Emitter Voltage(1&2) BD675A, BD677A, BD679A, BD681A VCE=3 V, IC=2 A Small signal VCE=3 V, IC=1,5 A, f= 1 MHz current gain Ut-off frequency VCE=3 V, IC=1,5 A Diode forward IF=1,5 A voltage Second-VCE=50 V, tP= 20ms,non rep., without breakdown heatsink collector current 23/10/2012 COMSET SEMICONDUCTORS Min Typ Max Unit - - 0,2 0,2 0,2 0,2 2 2 2 2 0,5 0,5 0,5 0,5 - - 5 mA 45 60 80 100 - - V - - 2,5 mA mA V - - 2.8 - 2200 - 750 - - - 1500 - 750 - - - - 2,5 - - 2.5 10 - - - 60 - kHz - 1,5 - V 0,8 - - A V 2 |3 NPN BD675/A - BD677/A - BD679/A - BD681/A Symbol Ratings Turn-on time Turn-off time ton toff 1. 2. Test Condition(s) -Icon= 1,5A, -Ibon= Iboff= 6mA, Min - Typ Max Unit 0,3 1,5 1.5 5 µs Measured under pulse conditions :tP <300µs, ď€ <2%. VBE decreases by about 3,6 mV/K with increasing temperature. MECHANICAL DATA CASE TO-126 DIMENSIONS min max 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 typ. 0.49 0.75 4.4 typ. 15.7 typ. 1.27 typ. 3.75 typ. 3.0 3.2 2.54 typ. A B C D E F G L M N P S Pin 1 : Pin 2 : Pin 3 : Emitter Collector Base Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 23/10/2012 [email protected] COMSET SEMICONDUCTORS 3 |3