CJD01N80 TO-251-3L Plastic-Encapsulate MOSFETS CJD01N80 N-Channel Power MOSFET TO-251-3L GENERAL DESCRIPTION The CJD01N80 is an N-channel mode power MOSFET using advanced technology to provide costomers with planar stripe. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The CJD01N80 is universally applied in high efficiency switch mode power supply. 1. GATE 2. DRAIN 3. SOURCE FEATURE z Excellent package for good heat dissipation High switching speed z 100% avalanche tested z APPLICATION z Power switching application z DC/DC converters Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 800 Gate-Source Voltage VGS ±30 Continuous Drain Current ID 1 Pulsed Drain Current IDM 4 Single Pulsed Avalanche Energy (note1) EAS 90 mJ Thermal Resistance from Junction to Ambient RθJA 100 ℃/W Junction Temperature TJ 150 Storage Temperature Range TSTG -55 ~+150 TL 260 Maximum Lead Temperature for Soldering Purposes , 1/8”from Case for 5 Seconds [email protected] www.zpsemi.com V A ℃ 1 of 3 CJD01N80 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 800 V Zero gate voltage drain current IDSS VDS =800V, VGS =0V 10 µA Gate-body leakage current IGSS VDS =0V, VGS =±30V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 5 V Static drain-source on-resistance RDS(on) VGS =10V, ID =0.5A 13.5 Ω gfs VDS =50V, ID =0.5A On characteristics Forward transconductance (note2) 3 0.75 S Dynamic characteristics (note 3) Input capacitance Ciss 195 Output capacitance Coss Reverse transfer capacitance Crss 3.5 td(on) 30 VDS =25V,VGS =0V,f =1MHz 26 pF Switching characteristics (note 2,3) Turn-on delay time Turn-on rise time Turn-off delay time tr td(off) Turn-off fall time 60 VDD=400V, RG=25Ω, ID =1A 40 tf 60 Total Gate Charge Qg 7.2 Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =640V,VGS =10V,ID =1A ns nC 1.1 nC 3.3 nC Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD VGS = 0V, IS =1A 1.4 V IS 1 A ISM 4 A Notes : 1. IL=1A, VDD=50V, RG=25Ω,Starting TJ=25℃ 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2% 3. Guaranteed by design, not subject to production [email protected] www.zpsemi.com 2 of 3 CJD01N80 Transfer Characteristics Output Characteristics 2.00 0.5 Pulsed VDS=10V Pulsed 1.75 (A) ID VGS= 6V、8V、10V 1.25 1.00 VGS=5.5V 0.75 DRAIN CURRENT DRAIN CURRENT ID (A) 0.4 1.50 0.3 Ta=100℃ Ta=25℃ 0.2 0.50 0.1 VGS=5V 0.25 0.00 0.0 0 5 10 15 20 DRAIN TO SOURCE VOLTAGE 25 VDS 30 0 1 (V) 2 3 4 5 GATE TO SOURCE VOLTAGE 6 VGS 7 (V) RDS(ON)—— VGS RDS(ON) —— ID 40 20 Ta=25℃ 18 Pulsed Pulsed ID=0.5A 35 10 ( Ω) 12 30 RDS(ON) 14 25 ON-RESISTANCE ON-RESISTANCE RDS(ON) ( Ω) 16 VGS=10V 8 6 20 15 Ta=100℃ 10 4 Ta=25℃ 5 2 0 0.50 0 0.75 1.00 1.25 1.50 DRAIN CURRENT ID 1.75 2.00 3 (A) 4 5 6 7 8 GATE TO SOURCE VOLTAGE VGS 9 10 (V) Threshold Voltage IS —— VSD 5 2 Pulsed 4 VTH Ta=25℃ Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1 0.1 0.01 0 200 400 600 800 SOURCE TO DRAIN VOLTAGE [email protected] 1000 1200 1400 ID=250uA 3 2 1 0 25 VSD (mV) 50 75 JUNCTION TEMPERATURE www.zpsemi.com 100 TJ 125 (℃ ) 3 of 3