ON MBT35200MT1 High current surface mount pnp silicon switching transistor for load management in portable application Datasheet

MBT35200MT1
High Current Surface
Mount PNP Silicon
Switching Transistor for
Load Management in
Portable Applications
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35 VOLTS
2.0 AMPS
PNP TRANSISTOR
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−35
Vdc
Collector-Base Voltage
VCBO
−55
Vdc
Emitter-Base Voltage
VEBO
−5.0
Vdc
IC
−2.0
Adc
Collector Current − Peak
ICM
−5.0
A
Electrostatic Discharge
ESD
Collector Current − Continuous
COLLECTOR
1, 2, 5, 6
3
BASE
HBM Class 3
MM Class C
4
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
625
mW
5.0
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
200
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
Thermal Resistance,
Junction−to−Lead #1
RqJL
80
°C/W
PDsingle
(Notes 2 & 3)
1.75
W
TJ, Tstg
−55 to
+150
°C
Total Device Dissipation
(Single Pulse < 10 sec.)
1.0
W
8.0
mW/°C
120
°C/W
CASE 318G
TSOP−6
STYLE 6
1
G4MG
G
1
Junction and Storage
Temperature Range
© Semiconductor Components Industries, LLC, 2005
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 9
June, 2005 − Rev. 2
MARKING
DIAGRAM
1
MBT35200MT1
MBT35200MT1G
Package
Shipping †
TSOP−6
3000/Tape & Reel
TSOP−6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBT35200MT1/D
MBT35200MT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
−35
−45
−
−55
−65
−
−5.0
−7.0
−
−
−0.03
−0.1
−
−0.03
−0.1
−
−0.01
−0.1
100
100
100
200
200
200
−
400
−
−
−
−
−0.125
−0.175
−0.260
−0.15
−0.20
−0.31
−
−0.68
−0.85
−
−0.81
−0.875
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −35 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCES = −35 Vdc)
ICES
Emitter Cutoff Current
(VEB = −4.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = −1.0 A, VCE = −1.5 V)
(IC = −1.5 A, VCE = −1.5 V)
(IC = −2.0 A, VCE = −3.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 1.)
(IC = −0.8 A, IB = −0.008 A)
(IC = −1.2 A, IB = −0.012 A)
(IC = −2.0 A, IB = −0.02 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 1.)
(IC = −1.2 A, IB = −0.012 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 1.)
(IC = −2.0 A, VCE = −3.0 V)
VBE(on)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
V
V
V
fT
MHz
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
−
600
650
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
−
85
100
pF
Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W)
ton
−
35
−
nS
Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W)
toff
−
225
−
nS
1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
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2
10
0.01
1.6
1.4
1.2
1.0
0.001
0.01
0.1
0.20
100°C
0.15
25°C
0.10
0.05
0
0.001
0.01
0.1
1.0
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
1.0
100°C
25°C
−55°C
0.2
0.001
0.01
0.1
25°C
0.6
100°C
0.4
0.2
0
1.0
−55°C
0.8
0.001
0.1
0.01
1.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus
Collector Current
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
1.1
750
1.0
700
0.9
100°C
0.8
25°C
0.7
0.6
−55°C
0.5
0.4
0.3
−55°C
IC, COLLECTOR CURRENT (AMPS)
0.4
0
IC/IB = 50
IC, COLLECTOR CURRENT (AMPS)
0.8
0.6
0.25
1.0
C ibo , INPUT CAPACITANCE (pF)
hFE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 100
50
0.001
V BE(on) , BASE EMITTER TURN−ON VOLTAGE (VOLTS)
VCE(sat), COLLECTOR EMITTER SATURATION
VOLTAGE (VOLTS)
0.1
VBE(sat) , BASE EMITTER SATURATION
VOLTAGE (VOLTS)
VCE(sat), COLLECTOR EMITTER SATURATION
VOLTAGE (VOLTS)
MBT35200MT1
650
600
550
500
450
400
350
0.001
0.01
0.1
300
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC, COLLECTOR CURRENT (AMPS)
VEB, EMITTER BASE VOLTAGE (VOLTS)
Figure 5. Base Emitter Turn−On Voltage
versus Collector Current
Figure 6. Input Capacitance
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3
4.5
5.0
MBT35200MT1
10
200
IC , COLLECTOR CURRENT (AMPS)
Cobo, OUTPUT CAPACITANCE (pF)
225
175
150
125
100
75
50
1 s 100 ms 10 ms
r(t), NORMALIZED TRANSIENT THERMAL
RESISTANCE
1.0
0
5.0
100 ms
1.0
DC
0.1
25
0
1 ms
0.01
SINGLE PULSE AT Tamb = 25°C
VCB, COLLECTOR BASE VOLTAGE (VOLTS)
1.0
10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Output Capacitance
Figure 8. Safe Operating Area
10
15
20
25
30
35
0.1
100
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
t, TIME (sec)
1.0
Figure 9. Normalized Thermal Response
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4
10
100
1000
MBT35200MT1
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
HE
1
5
4
2
3
E
b
DIM
A
A1
b
c
D
E
e
L
HE
q
e
q
c
A
0.05 (0.002)
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
STYLE 6:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
MBT35200MT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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MBT35200MT1/D
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