Electronics MBR20200 Schottky barrier rectifier Datasheet

MBR2020 THRU MBR20200
星合电子
SCHOTTKY BARRIER RECTIFIER
XINGHE ELECTRONICS
Reverse Voltage - 20 to 200 Volts
Forward Current - 20Amperes
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
TO-220AC
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
0.185(4.70)
Low power loss ,high efficiency
0.175(4.44)
0.161(4.10)
0.410(10.42)
0.388(9.85)
0.147(3.74)
DIA
High current capability ,Low forward voltage drop
0.055(1.39)
0.045(1.14)
High surge capability
0.113(2.88)
0.283(7.20)
0.102(2.60)
For use in low voltage ,high frequency inverters,
0.244(6.20)
free wheeling ,and polarity protection applications
XH
0.610(15.50)
MBR20200
0.571(14.50)
Dual rectifier construction
PIN
High temperature soldering guaranteed:260° C/10 seconds,,
1
0.25"(6.35mm)from case
Component in accordance to RoHS 2002/95/EC and
2
0.159(4.05)
1.161(29.50)
0.140(3.55)
1.106(28.10)
0.114(2.90)
0.098(2.50)
0.560(14.22)
0.053(1.34)
WEEE 2002/96/EC
0.512(13.00)
0.047(1.20)
0.037(0.94)
0.027(0.68)
MECHANICAL DATA
0.023(0.58)
0.014(0.35)
Case: JEDEC TO-220AC molded plastic body
0.208(5.28)
0.192(4.88)
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight: 0.08ounce, 2.24 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Per leg
Total device
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum average forward
rectified current(see Fig.1)
VRRM
VRMS
VDC
MBR
2050
MBR
2060
MBR
2080
MBR
20100
MBR
20150
20
30
40
50
60
80
100
150
200
14
21
28
35
42
56
70
105
140
20
30
40
50
60
80
100
150
200
MBR
20200
Units
Volts
Volts
Volts
Amps
IFSM
200.0
Amps
VF
IR
Typical thermal resistance (Note 2)
R
Operating junction temperature range
TJ
TSTG
Storage temperature range
MBR
2040
I(AV)
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T C =125 C
MBR
2030
10.0
20.0
Maximum instantaneous forward voltage
at 20.0 A
T C =25 C
MBR
2020
0.60
0.75
0.85
0.2
30
JC
50
0.90
0.95
Volts
mA
3.0
C/W
-65 to+150
C
-65 to+150
C
Notes: 1.Pulse test: 300
s pulse width,1% duty cycle
2.Thermal resistance from junction to case
1
GAOMI XINGHE ELECTRONICS CO.,LTD.
WWW.SDDZG.COM
星合电子
MBR2020 THRU MBR20200
XINGHE ELECTRONICS
RATING AND CHARACTERISTIC CURVES
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
20
200
PEAK FORWARD SURGE
CURRENT(AMPERES)
AVERAGE FORWARD CURRENT
AMPERES
FIG.1-FORWARD CURRENT DERATING CURVE
16
12
8
INDUCTIVE OR
RESISTIVE LOAD
4
180
160
TJ=TJMAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
140
120
100
0
0
50
100
150
80
LEAD TEMPERATURE ( C)
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
50
10
(mA)
TJ=125 C
10
PULSE WIDTH=300 S
1% DUTY CYCLE
TJ=25 C
1
TJ=125 C
INSTANTANEOUS REVERSE CURRENT
INSTANTANEOUS FORWARD CURRENT( AMPERES)
50
0.1
1
TJ=75 C
0.1
0.01
TJ=25 C
0.01
0
0.1
0.2
0.3
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.001
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE%
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE, C/ W
JUNCTION CAPACITANCE(pF)
FIG.5-TYPICAL JUNCTION CAPACITANCE
4000
TJ=25 C
f=1.0MHZ
Vsig=50mVp-p
1000
100
0.1
1
10
100
REVERSE VOLTAGE. VOLTS
100
10
1
0.1
0.01
0.1
1
10
100
T, PULSE DURATION ,sec.
2
GAOMI XINGHE ELECTRONICS CO.,LTD.
WWW.SDDZG.COM
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