MBR2020 THRU MBR20200 星合电子 SCHOTTKY BARRIER RECTIFIER ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Reverse Voltage - 20 to 200 Volts Forward Current - 20Amperes FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 TO-220AC Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection 0.185(4.70) Low power loss ,high efficiency 0.175(4.44) 0.161(4.10) 0.410(10.42) 0.388(9.85) 0.147(3.74) DIA High current capability ,Low forward voltage drop 0.055(1.39) 0.045(1.14) High surge capability 0.113(2.88) 0.283(7.20) 0.102(2.60) For use in low voltage ,high frequency inverters, 0.244(6.20) free wheeling ,and polarity protection applications XH 0.610(15.50) MBR20200 0.571(14.50) Dual rectifier construction PIN High temperature soldering guaranteed:260° C/10 seconds,, 1 0.25"(6.35mm)from case Component in accordance to RoHS 2002/95/EC and 2 0.159(4.05) 1.161(29.50) 0.140(3.55) 1.106(28.10) 0.114(2.90) 0.098(2.50) 0.560(14.22) 0.053(1.34) WEEE 2002/96/EC 0.512(13.00) 0.047(1.20) 0.037(0.94) 0.027(0.68) MECHANICAL DATA 0.023(0.58) 0.014(0.35) Case: JEDEC TO-220AC molded plastic body 0.208(5.28) 0.192(4.88) Terminals: Lead solderable per MIL-STD-750,method 2026 Polarity: As marked Mounting Position: Any Dimensions in inches and (millimeters) Weight: 0.08ounce, 2.24 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive load. For capacitive load,derate by 20%.) Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Per leg Total device Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum average forward rectified current(see Fig.1) VRRM VRMS VDC MBR 2050 MBR 2060 MBR 2080 MBR 20100 MBR 20150 20 30 40 50 60 80 100 150 200 14 21 28 35 42 56 70 105 140 20 30 40 50 60 80 100 150 200 MBR 20200 Units Volts Volts Volts Amps IFSM 200.0 Amps VF IR Typical thermal resistance (Note 2) R Operating junction temperature range TJ TSTG Storage temperature range MBR 2040 I(AV) Maximum instantaneous reverse current at rated DC blocking voltage(Note 1) T C =125 C MBR 2030 10.0 20.0 Maximum instantaneous forward voltage at 20.0 A T C =25 C MBR 2020 0.60 0.75 0.85 0.2 30 JC 50 0.90 0.95 Volts mA 3.0 C/W -65 to+150 C -65 to+150 C Notes: 1.Pulse test: 300 s pulse width,1% duty cycle 2.Thermal resistance from junction to case 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ 星合电子 MBR2020 THRU MBR20200 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ RATING AND CHARACTERISTIC CURVES FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 20 200 PEAK FORWARD SURGE CURRENT(AMPERES) AVERAGE FORWARD CURRENT AMPERES FIG.1-FORWARD CURRENT DERATING CURVE 16 12 8 INDUCTIVE OR RESISTIVE LOAD 4 180 160 TJ=TJMAX 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 140 120 100 0 0 50 100 150 80 LEAD TEMPERATURE ( C) 1 10 100 NUMBER OF CYCLES AT 60Hz FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4-TYPICAL REVERSE CHARACTERISTICS 50 10 (mA) TJ=125 C 10 PULSE WIDTH=300 S 1% DUTY CYCLE TJ=25 C 1 TJ=125 C INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD CURRENT( AMPERES) 50 0.1 1 TJ=75 C 0.1 0.01 TJ=25 C 0.01 0 0.1 0.2 0.3 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE% FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, C/ W JUNCTION CAPACITANCE(pF) FIG.5-TYPICAL JUNCTION CAPACITANCE 4000 TJ=25 C f=1.0MHZ Vsig=50mVp-p 1000 100 0.1 1 10 100 REVERSE VOLTAGE. VOLTS 100 10 1 0.1 0.01 0.1 1 10 100 T, PULSE DURATION ,sec. 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ