AP2622GY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D1
D2
▼ Small Package Outline
▼ Surface Mount Package
G1
G2
BVDSS
50V
RDS(ON)
1.8Ω
ID
520mA
▼ RoHS Compliant
S2
S1
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
The SOT-26 package is widely used for all commercial-industrial
applications.
D2
S1
D1
G2
SOT-26
G1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
50
V
+20
V
3
520
mA
3
410
mA
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
1.5
A
PD@TA=25℃
Total Power Dissipation
0.8
W
Linear Derating Factor
0.006
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
150
℃/W
1
201204063
AP2622GY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
50
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.06
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=500mA
-
-
1.8
Ω
VGS=4.5V, ID=200mA
-
-
3.2
Ω
VGS=0V, ID=250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=500mA
-
600
-
mS
IDSS
Drain-Source Leakage Current
VDS=50V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=70 C) VDS=40V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
ID=500mA
-
1
1.6
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=40V
-
0.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
0.5
-
nC
VDS=25V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=500mA
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
56
-
ns
tf
Fall Time
RD=50Ω
-
29
-
ns
Ciss
Input Capacitance
VGS=0V
-
32
50
pF
Coss
Output Capacitance
VDS=25V
-
8
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=0.6A, VGS=0V
Max. Units
1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 250℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2622GY-HF
1.0
1.0
0.8
ID , Drain Current (A)
ID , Drain Current (A)
0.8
0.6
V G = 3.0 V
0.4
0.6
V G = 3.0 V
0.4
0.2
0.2
0.0
0.0
0.0
1.0
2.0
3.0
4.0
5.0
0
6.0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.0
I D = 500m A
V G =10V
I D = 200m A
T A =25 o C
Normalized RDS(ON)
2.5
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
o
T A = 150 C
10V
7.0V
5.0V
4.5V
o
T A =25 C
2.0
1.5
1.0
1.5
1.0
0.5
2
4
6
8
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
Normalized VGS(th)
0.6
0.4
o
o
IS(A)
T j =150 C
T j =25 C
0.2
1.1
0.7
0.3
0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2622GY-HF
f=1.0MHz
100
I D = 500m A
10
C iss
V DS = 25 V
V DS =30V
V DS =40V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
10
C oss
C rss
4
2
0
1
0
0.5
1
1.5
2
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
10.00
1.00
ID (A)
100us
1ms
0.10
10ms
o
T A =25 C
Single Pulse
100ms
1s
DC
0.01
Duty factor=0.5
0.2
0.1
PDM
0.1
t
0.05
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja =250℃/W
Single Pulse
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
1.0
VG
V DS =5V
ID , Drain Current (A)
0.8
T j =25 o C
QG
T j =150 o C
4.5V
0.6
QGS
QGD
0.4
0.2
Charge
Q
0.0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4