SEMICONDUCTOR BFS20/BF599 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. E B L MAXIMUM RATING (Ta=25 L 2 UNIT H RATING A SYMBOL Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V P V IC 25 mA Emitter Current IE -25 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -65 150 M K Collector Current J 5 N BF599 1 P 4 VEBO C BFS20 Emitter-Base Voltage 3 G CHARACTERISTIC D ) MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P 1. EMITTER Storage Temperature Range 2. BASE 3. COLLECTOR SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=2mA, IB=0 25 - - V V(BR)EBO IE=10 A, IC=0 - - V Emitter-Base BFS20 Breakdown Voltage BF599 BFS20 Collector Cut-off Current ICBO BF599 DC Current Gain BFS20 Base-Emitter Voltage BF599 BFS20 Transition Frequency BF599 - 100 nA VCB=20V, IE=0, Ta=150 - - 10 A VCB=40V, IE=0 - - 100 nA 40 - - - - 750 900 - 750 - 275 550 - - 550 - - 0.35 - VBE(ON) VCE=10V, IC=7mA mV VCE=10V, IC=7mA, f=100MHz VCB=10V, f=1MHz, IE=0 MHz pF Marking MARK SPEC TYPE MARK BFS20 G1 BF599 G2 1999. 11. 30 - VCE=10V, IC=7mA fT 5 VCB=20V, IE=0 hFE Cob Collector Output Capacitance 4 Revision No : 2 Lot No. Type Name G1 Type Name Lot No. G2 1/1